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Method of manufacturing semiconductor device

  • US 8,828,794 B2
  • Filed: 03/07/2012
  • Issued: 09/09/2014
  • Est. Priority Date: 03/11/2011
  • Status: Active Grant
First Claim
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1. A method of manufacturing a semiconductor device, the method comprising the steps of:

  • forming an oxide film;

    forming an oxide semiconductor film on the oxide film;

    performing a first heat treatment on the oxide semiconductor film;

    forming a conductive film over the oxide semiconductor film after performing the first heat treatment;

    forming an aluminum oxide film over the oxide semiconductor film and the conductive film;

    after forming the oxide semiconductor film, adding oxygen into the oxide semiconductor film; and

    performing a second heat treatment on the oxide semiconductor film and the aluminum oxide film after adding the oxygen,wherein the oxide film and the oxide semiconductor film are successively formed without exposure to air.

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