Method of manufacturing semiconductor device
First Claim
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1. A method of manufacturing a semiconductor device, the method comprising the steps of:
- forming an oxide film;
forming an oxide semiconductor film on the oxide film;
performing a first heat treatment on the oxide semiconductor film;
forming a conductive film over the oxide semiconductor film after performing the first heat treatment;
forming an aluminum oxide film over the oxide semiconductor film and the conductive film;
after forming the oxide semiconductor film, adding oxygen into the oxide semiconductor film; and
performing a second heat treatment on the oxide semiconductor film and the aluminum oxide film after adding the oxygen,wherein the oxide film and the oxide semiconductor film are successively formed without exposure to air.
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Abstract
In a manufacturing process of a transistor including an oxide semiconductor film, oxygen doping treatment is performed on the oxide semiconductor film, and then heat treatment is performed on the oxide semiconductor film and an aluminum oxide film provided over the oxide semiconductor film. Consequently, an oxide semiconductor film which includes a region containing more oxygen than a stoichiometric composition is formed. The transistor formed using the oxide semiconductor film can have high reliability because the amount of change in the threshold voltage of the transistor by a bias-temperature stress test (BT test) is reduced.
201 Citations
28 Claims
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1. A method of manufacturing a semiconductor device, the method comprising the steps of:
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forming an oxide film; forming an oxide semiconductor film on the oxide film; performing a first heat treatment on the oxide semiconductor film; forming a conductive film over the oxide semiconductor film after performing the first heat treatment; forming an aluminum oxide film over the oxide semiconductor film and the conductive film; after forming the oxide semiconductor film, adding oxygen into the oxide semiconductor film; and performing a second heat treatment on the oxide semiconductor film and the aluminum oxide film after adding the oxygen, wherein the oxide film and the oxide semiconductor film are successively formed without exposure to air. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method of manufacturing a semiconductor device, the method comprising the steps of:
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forming an oxide film; forming an oxide semiconductor film on the oxide film; forming an aluminum oxide film over the oxide semiconductor film so that the aluminum oxide film is in contact with part of the oxide semiconductor film; after forming the oxide semiconductor film, adding oxygen into the oxide semiconductor film so that a region of the oxide semiconductor film comprises more oxygen than a stoichiometric composition; and performing a heat treatment on the oxide semiconductor film and the aluminum oxide film after adding the oxygen. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19)
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20. A method of manufacturing a semiconductor device, the method comprising the steps of:
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forming an oxide film; forming an oxide semiconductor film on the oxide film; performing a first heat treatment on the oxide semiconductor film to remove a hydrogen atom from the oxide semiconductor film; forming an aluminum oxide film over the oxide semiconductor film after performing the first heat treatment so that the aluminum oxide film is in contact with part of the oxide semiconductor film; adding oxygen into the oxide semiconductor film after performing the first heat treatment so that a region of the oxide semiconductor film comprises more oxygen than a stoichiometric composition; and performing a second heat treatment on the oxide semiconductor film and the aluminum oxide film after adding the oxygen. - View Dependent Claims (21, 22, 23, 24, 25, 26, 27, 28)
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Specification