Manufacturing method of semiconductor device comprising steps of forming oxide semiconductor film, performing heat treatment on the oxide semiconductor film, and performing oxygen doping treatment on the oxide semiconductor film after the heat treatment
First Claim
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1. A method for manufacturing a semiconductor device, comprising the steps of:
- forming a gate electrode layer;
forming a first gate insulating film over the gate electrode layer;
forming an oxide semiconductor film by sputtering method over the first gate insulating film so as to overlap with the gate electrode layer, wherein a substrate temperature is set to temperatures higher than or equal to 100°
C. and lower than or equal to 600°
C. during forming the oxide semiconductor film;
performing heat treatment on the oxide semiconductor film to remove a hydrogen atom in the oxide semiconductor film;
performing oxygen doping treatment on the oxide semiconductor film to supply an oxygen atom into the oxide semiconductor film after the heat treatment;
forming a source electrode layer and a drain electrode layer which are electrically connected to the oxide semiconductor film; and
forming a second insulating film over the oxide semiconductor film, the source electrode layer, and the drain electrode layer so as to be in contact with the oxide semiconductor film.
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Abstract
A semiconductor device using an oxide semiconductor, with stable electric characteristics and high reliability. In a process for manufacturing a bottom-gate transistor including an oxide semiconductor film, dehydration or dehydrogenation is performed by heat treatment and oxygen doping treatment is performed. The transistor including the oxide semiconductor film subjected to the dehydration or dehydrogenation by the heat treatment and the oxygen doping treatment is a transistor having high reliability in which the amount of change in threshold voltage of the transistor by the bias-temperature stress test (BT test) can be reduced.
159 Citations
19 Claims
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1. A method for manufacturing a semiconductor device, comprising the steps of:
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forming a gate electrode layer; forming a first gate insulating film over the gate electrode layer; forming an oxide semiconductor film by sputtering method over the first gate insulating film so as to overlap with the gate electrode layer, wherein a substrate temperature is set to temperatures higher than or equal to 100°
C. and lower than or equal to 600°
C. during forming the oxide semiconductor film;performing heat treatment on the oxide semiconductor film to remove a hydrogen atom in the oxide semiconductor film; performing oxygen doping treatment on the oxide semiconductor film to supply an oxygen atom into the oxide semiconductor film after the heat treatment; forming a source electrode layer and a drain electrode layer which are electrically connected to the oxide semiconductor film; and forming a second insulating film over the oxide semiconductor film, the source electrode layer, and the drain electrode layer so as to be in contact with the oxide semiconductor film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 15, 16)
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8. A method for manufacturing a semiconductor device, comprising the steps of:
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forming a gate electrode layer; forming a first gate insulating film containing an oxygen atom as a component over the gate electrode layer; performing oxygen doping treatment on the first gate insulating film to supply an oxygen atom into the first gate insulating film; forming an oxide semiconductor film by sputtering method over the first gate insulating film on which the oxygen doping treatment is performed so as to overlap with the gate electrode layer; performing heat treatment on the oxide semiconductor film to remove a hydrogen atom in the oxide semiconductor film; performing oxygen doping treatment on the oxide semiconductor film to supply an oxygen atom into the oxide semiconductor film after the heat treatment; forming a source electrode layer and a drain electrode layer which are electrically connected to the oxide semiconductor film; forming a second insulating film containing an oxygen atom as a component over the oxide semiconductor film, the source electrode layer, and the drain electrode layer so as to be in contact with the oxide semiconductor film; and performing oxygen doping treatment on the second insulating film to supply an oxygen atom into the second insulating film. - View Dependent Claims (9, 10, 11, 12, 13, 14, 17, 18, 19)
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Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
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Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
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InventorsYamazaki, Shunpei
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Primary Examiner(s)Pham, Thanh V
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Application NumberUS13/091,181Publication NumberTime in Patent Office1,237 DaysField of Search438/149, 438/162, 438/164, 438/165, 438/FOR.184, 257/E21.462US Class Current438/165CPC Class CodesH01L 21/02175 characterised by the metal ...H01L 21/02565 Oxide semiconducting materi...H01L 21/02631 Physical deposition at redu...H01L 21/383 using diffusion into or out...H01L 21/441 Deposition of conductive or...H01L 21/473 composed of oxides or glass...H01L 21/47576 Doping the layerH01L 21/477 Thermal treatment for modif...H01L 29/24 including, apart from dopin...H01L 29/41733 for thin film transistors w...H01L 29/45 Ohmic electrodesH01L 29/4908 for thin film semiconductor...H01L 29/66742 Thin film unipolar transistorsH01L 29/66969 of devices having semicondu...H01L 29/78606 with supplementary region o...H01L 29/7869 having a semiconductor body...
