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FinFET device and method of manufacturing same

  • US 8,828,823 B2
  • Filed: 04/02/2014
  • Issued: 09/09/2014
  • Est. Priority Date: 10/13/2011
  • Status: Active Grant
First Claim
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1. A method of forming a semiconductor device comprising:

  • forming a plurality of fins over a substrate;

    forming an insulation material in a region between the plurality of fins;

    forming a dielectric layer over the plurality of fins and over the insulation material in the region between the plurality of fins;

    forming a work function metal over the plurality of fins and over the dielectric layer in the region between the plurality of fins;

    forming a strained material over the work function metal in the region between the plurality of fins; and

    forming a signal metal over the plurality of fins, over the work function metal, and over the strained material.

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