Electrical device including a functional element in a cavity

• US 8,829,359 B2
• Filed: 10/09/2012
• Issued: 09/09/2014
• Est. Priority Date: 01/25/2008
• Status: Active Grant

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Kojima, Akihiro, Sugizaki, Yoshiaki, Shimooka, Yoshiaki
• Primary Examiner(s): Willis, Tremesha S
• Application Number:
  US13/647,845
• Publication Number:
  US 20130032386A1
• Time in Patent Office: 700 Days
• Field of Search: 174/260, 174/250, 174/255, 174/256, 174/258, 361/679.01, 361/679.02
• US Class Current: 174/260
• CPC Class Codes: B81B 2201/0221 Variable capacitors
• CPC Class Codes: B81B 2203/04 Electrodes
• CPC Class Codes: B81B 7/0038 using materials for controlling the level of pressure, contaminants or moisture inside of the package, e.g. getters
• CPC Class Codes: B81C 1/00476 removing a sacrificial layer B81C1/00912 takes precedence

Abstract

A substrate includes a functional element. An insulating first film forms a cavity which stores the functional element, together with the substrate, and includes a plurality of through-holes. An insulating second film covers the plurality of through-holes, is formed on the first film, and has a gas permeability which is higher than that of the first film. An insulating third film is formed on the second film and has a gas permeability which is lower than the second film. An insulating fourth film is formed on the third film and has an elasticity which is larger than the third film.

Claims

1. An electrical device comprising:

a functional element formed above a substrate;

an insulating first film formed above the functional element to have a space between the first film and the functional element, the first film including a plurality of through-holes, and comprising an inorganic film;

an insulating second film formed above the insulating first film, the second film comprising an organic film, and facing the through-holes;

an insulating third film formed above the insulating second film, the third film comprising an inorganic film; and

an insulating fourth film formed above the insulating third film, the fourth film comprising an organic film,

wherein the second film closes each of the through-holes.

2. The device of claim 1, wherein

the first film is a silicon compound consisting mainly of Si—

O bonds,

the second film is a resin,

the third film is a silicon compound consisting mainly of Si—

N bonds, and

the insulating fourth film is a resin.

3. The device of claim 1, wherein the third film comprises aluminum.

4. The device of claim 1, wherein the second film is configured to cover the plurality of the through-holes.

5. The device of claim 1, further comprising:

an insulating fifth film configured to cover a side surface of the second film and comprising an inorganic film.

6. The device of claim 5, wherein the fifth film and the third film are films formed of the same material.

7. The device of claim 5, further comprising,

an electrode formed outside the second film.

8. The device of claim 5, further comprising:

wiring of which one end is connected to the functional element and of which the other end is extended outside the second film;

an organic film which is apart from the second film, covers the other end of the wiring and includes an opening corresponding to the other end of the wiring; and

a bump which is formed on the organic film surrounding the opening and is connected to the other end of the wiring.

9. The device of claim 1, wherein the fourth film is one of an epoxy resin and a polyimide resin.

10. The device of claim 1, further comprising:

an insulating fifth film configured to cover a side surface of the second film, the fifth film having a gas permeability lower than that of the second film.

11. The device of claim 10, wherein the fifth film and the third film are films formed of the same material.

12. The device of claim 10, further comprising, an electrode formed outside the second film.

13. The device of claim 12, further comprising:

wiring of which one end is connected to the functional element and of which the other end is extended outside the second film;

an organic film which is apart from the second film, covers the other end of the wiring and includes an opening corresponding to the other end of the wiring; and

a bump which is formed on the organic film surrounding the opening and is connected to the other end of the wiring.

14. The device of claim 1, wherein the first film is a silicon compound which consists mainly of Si—

O bonds;

the second film is any one of a thermosetting-type resin, an ultraviolet-curable resin and an electron-beam curing-type resin which consist mainly of carbon;

the third film is a silicon compound which consists mainly of Si—

N bonds; and

the fourth film is one of an epoxy resin and a polyimide resin.

15. The device of claim 1, the insulating second film configured to be formed in the through-holes.

16. The device according to claim 1, wherein the functional element includes an electrode movable in the space.

17. The device according to claim 16, wherein the functional element is constituted by a micro electro mechanical system (MEMS).

26. The device of claim 1, wherein the insulating second film faces directly the through-holes.

18. An electrical device, comprising:

a functional element formed above a substrate;

an insulating first film formed above the functional element to have a space between the first film and the functional element, the first film including a plurality of through-holes, and comprising an inorganic film;

an insulating second film formed above the insulating first film, the second film comprising an organic film;

an insulating third film formed on the insulating second film, the third film comprising an inorganic film and coming in contact with the insulating second film; and

an insulating fourth film formed above the insulating third film, the fourth film comprising an organic film,

wherein the second film closes each of the through-holes.

19. The device of claim 18, wherein

the first film is a silicon compound consisting mainly of Si—

O bonds,

the second film is a resin,

the third film is a silicon compound consisting mainly of Si—

N bonds, and

the insulating fourth film is a resin.

20. The device of claim 18, wherein the third film comprises aluminum.

21. The device of claim 18, wherein the second film is configured to cover the plurality of the through-holes.

22. The device of claim 18, further comprising:

an insulating fifth film configured to cover a side surface of the second film and comprising an inorganic film.

23. The device of claim 18, wherein the fourth film is one of an epoxy resin and a polyimide resin.

24. The device of claim 18, the insulating second film configured to be formed in the through-holes.

25. The device of claim 18, wherein the functional element includes an electrode movable in the space.

27. An electrical device, comprising:

a functional element formed above a substrate;

an insulating first film formed above the functional element to have a space between the first film and the functional element, the first film including a plurality of through-holes, and comprising an inorganic film;

an insulating second film formed above the insulating first film, the second film comprising an organic film, and facing the through-holes;

an insulating third film formed above the insulating second film, the third film comprising an inorganic film; and

an insulating fourth film formed above the insulating third film, the fourth film comprising an organic film,

wherein the functional element includes an electrode movable in the space.

28. An electrical device, comprising:

a functional element formed above a substrate;

an insulating first film formed above the functional element to have a space between the first film and the functional element, the first film including a plurality of through-holes, and comprising an inorganic film;

an insulating second film formed above the insulating first film, the second film comprising an organic film;

an insulating third film formed on the insulating second film, the third film comprising an inorganic film and coming in contact with the insulating second film; and

an insulating fourth film formed above the insulating third film, the fourth film comprising an organic film,

wherein the functional element includes an electrode movable in the space.