Semiconductor light emitting device and method for manufacturing the same

• US 8,829,490 B2
• Filed: 03/18/2014
• Issued: 09/09/2014
• Est. Priority Date: 10/08/2007
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: Kim, Kyong Jun
• Primary Examiner(s): Valentine, Jami M
• Application Number:
  US14/218,829
• Publication Number:
  US 20140203241A1
• Time in Patent Office: 175 Days
• Field of Search: 257/13, 257/79, 257/94, 257/E33.001, 438/22
• US Class Current: 257/13
• CPC Class Codes: B82Y 99/00 Subject matter not provided for in other groups of this subclass
• CPC Class Codes: H01L 33/04 with a quantum effect structure or superlattice, e.g. tunnel junction
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/12 with a stress relaxation structure, e.g. buffer layer
• CPC Class Codes: H01L 33/32 containing nitrogen

Abstract

Disclosed is a semiconductor light emitting device including a first to third conductive semiconductor layers which have an n-type dopant, an active layer, and a fourth and fifth conductive semiconductor layers which have a p-type dopant. The first and third conductive semiconductor layers are a GaN semiconductor, and the second conductive semiconductor layer is an InGaN-based semiconductor layer. The fourth conductive semiconductor layer is formed of an AlGaN semiconductor and the fifth conductive semiconductor layer is formed of a GaN-based semiconductor layer. The active layer includes plurality of quantum barrier layers and plurality of quantum well layers and includes a cycle of 2 to 10. The plurality of quantum well layers include an InGaN semiconductor and at least one of the plurality of quantum barrier layers includes a GaN-based semiconductor, and at least two of the plurality barrier layers has a thickness of about 50 Å to about 300 Å.

Claims

1. A semiconductor light emitting device, comprising:

a first conductive semiconductor layer;

an active layer disposed on the first conductive semiconductor layer;

a second conductive semiconductor layer disposed between the first conductive semiconductor layer and the active layer;

a third conductive semiconductor layer disposed between the active layer and the second conductive semiconductor layer;

a fourth conductive semiconductor layer on the active layer;

a fifth conductive semiconductor layer disposed between the fourth conductive semiconductor layer and the active layer;

a first electrode layer electrically connected to at least one of the first to third conductive semiconductor layers; and

a second electrode layer electrically connected to the fifth conductive semiconductor layer,

wherein the first to third conductive semiconductor layers include an n-type dopant,

wherein the fourth and fifth conductive semiconductor layers include a p-type dopant,

wherein the first and third conductive semiconductor layers are formed of a GaN semiconductor,

wherein the second conductive semiconductor layer is formed of an InGaN-based semiconductor and is formed of a different semiconductor from the first and third conductive semiconductor layers,

wherein the fourth conductive semiconductor layer is formed of an AlGaN semiconductor,

wherein the fifth conductive semiconductor layer is formed of a GaN-based semiconductor,

wherein the first conductive semiconductor layer has a thickness thicker than a thickness of the third conductive semiconductor layer,

wherein the fifth conductive semiconductor layer has a thickness thicker than a thickness of the fourth conductive semiconductor layer,

wherein the active layer includes plurality of quantum barrier layers and plurality of quantum well layers,

wherein a cycle of the quantum barrier layer and the quantum well layer of the active layer includes a cycle of 2 to 10,

wherein the plurality of quantum well layers include an InGaN semiconductor layer,

wherein at least one of the plurality of quantum barrier layers includes a GaN-based semiconductor layer, and

wherein at least two of the plurality barrier layers has a thickness of about 50 Å

to about 300 Å

, respectively.

2. The semiconductor light emitting device according to claim 1, wherein the second conductive semiconductor layer is formed of an InGaN semiconductor layer, and

wherein the fifth conductive semiconductor layer is formed of a GaN semiconductor layer.

3. The semiconductor light emitting device according to claim 2, wherein at least two of the plurality well layers have a thickness of about 15 Å

to about 30 Å

.

4. The semiconductor light emitting device according to claim 3, wherein the first conductive semiconductor layer has the thickness of 0.001 μ

m to 3 μ

m.

5. The semiconductor light emitting device according to claim 3, wherein the third conductive semiconductor layer has the thickness of about 0.0001˜

0.5 μ

m.

6. The semiconductor light emitting device according to claim 3, wherein the fourth conductive semiconductor layer has the thickness of 5 Å

to 100 nm.

7. The semiconductor light emitting device according to claim 3, wherein the fifth conductive semiconductor layer has the thickness of 5 nm to 100 nm and contacts the fourth conductive semiconductor layer.

8. The semiconductor light emitting device according to claim 3, wherein the at least one of the plurality of barrier layers includes an InGaN-based semiconductor layer.

9. The semiconductor light emitting device according to claim 3, wherein the fourth conductive semiconductor layer has a carrier concentration higher than a carrier concentration of the fifth conducive semiconductor layer, and

wherein the fourth conductive semiconductor has a carrier concentration of 10¹⁶/cm³ to 5×

10²²/cm³.

10. A semiconductor light emitting device, comprising:

a plurality of n-type semiconductor layers;

a plurality of p-type semiconductor layers disposed on the plurality of n-type semiconductor layers;

an active layer disposed between the plurality of n-type semiconductor layers and the plurality of p-type semiconductor layers, wherein the active layer includes a plurality of quantum barrier layers and a plurality of quantum well layers;

a first electrode layer connected to at least one of the plurality of n-type semiconductor layers; and

a second electrode layer connected to at least one of the plurality of p-type semiconductor layers,

wherein the plurality of n-type semiconductor layers include a first GaN layer, a second InGaN-based layer disposed on the first GaN layer, and a third GaN layer disposed between the active layer and the second InGaN-based layer,

wherein the plurality of p-type semiconductor layers include a fourth AlGaN-based layer on the active layer and a fifth GaN layer disposed on the fourth AlGaN-based layer, wherein the fourth AlGaN-based layer is disposed between the active layer and the fifth GaN layer,

wherein the first GaN layer has a thickness thicker than a thickness of the third GaN layer,

wherein the fifth GaN layer has the thickness thinner than a thickness of the fourth AlGaN-based layer,

wherein the plurality of quantum well layers of the active layer include an InGaN layer,

wherein at least one of the plurality of quantum barrier layers includes a GaN-based AlGaN-based layer,

wherein the plurality of quantum well layers of the active layer include an InGaN layer,

wherein at least one of the plurality of quantum barrier layers includes a GaN-based semiconductor layer,

wherein at least two of the plurality barrier layers have a thickness of about 50 Å

to about 300 Å

, respectively, and

wherein a cycle of the quantum barrier layer and the quantum well layer of the active layer includes a cycle of 2 to 10.

11. The semiconductor light emitting device according to claim 10, wherein second InGaN-based layer is formed of an InGaN semiconductor, and

wherein the fourth AlGaN-based layer is formed of an AlGaN semiconductor.

12. The semiconductor light emitting device according to claim 11, wherein the fourth AlGaN-based layer contacts the active layer.

13. The semiconductor light emitting device according to claim 11, wherein the third GaN layer contacts the active layer.

14. The semiconductor light emitting device according to claim 13, wherein the at least one of the plurality of quantum barrier layers includes an InGaN semiconductor.

15. The semiconductor light emitting device according to claim 13, wherein the fifth GaN layer has the thickness range of 5 nm to 100 nm.

16. The semiconductor light emitting device according to claim 13, wherein the first GaN layer has the thickness range of 0.001 μ

m to 3 μ

m.

17. The semiconductor light emitting device according to claim 13, wherein the third GaN layer has a thickness range of 0.0001˜

0.5 μ

m.

18. The semiconductor light emitting device according to claim 12, wherein the fourth AlGaN-based layer has a carrier concentration higher than a carrier concentration of the fifth GaN layer.

19. The semiconductor light emitting device according to claim 12, wherein the fourth AlGaN-based layer has a carrier concentration of 10¹⁶/cm³ to 5×

10²²/cm³.

20. The semiconductor light emitting device according to claim 12, wherein the fifth GaN layer has a carrier concentration of 10¹⁶/cm³ to 10²²/cm³.