Semiconductor device and method for manufacturing the same

• US 8,829,512 B2
• Filed: 12/20/2011
• Issued: 09/09/2014
• Est. Priority Date: 12/28/2010
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei
• Primary Examiner(s): Nguyen, Thinh T
• Application Number:
  US13/330,778
• Publication Number:
  US 20120161123A1
• Time in Patent Office: 994 Days
• Field of Search: 257/43, 257/57, 257/E29.068, 257/E21.409, 257/16, 257/22, 257/24, 438/85, 438/86, 438/104
• US Class Current: 257/43
• CPC Class Codes: H01L 21/02472 Oxides
• CPC Class Codes: H01L 21/02488 Insulating materials
• CPC Class Codes: H01L 21/02502 consisting of two layers
• CPC Class Codes: H01L 27/127 with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
• CPC Class Codes: H01L 29/247 Amorphous materials
• CPC Class Codes: H01L 29/66742 Thin film unipolar transistors
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/78618 characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure silicide contacts, electrodes in general H01L29/458
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 29/78693 the semiconducting oxide being amorphous

Abstract

A miniaturized semiconductor device including a transistor in which a channel formation region is formed using an oxide semiconductor film and variation in electric characteristics due to a short-channel effect is suppressed is provided. In addition, a semiconductor device whose on-state current is improved is provided. A semiconductor device is provided with an oxide semiconductor film including a pair of second oxide semiconductor regions which are amorphous regions and a first oxide semiconductor region located between the pair of second oxide semiconductor regions, a gate insulating film, and a gate electrode provided over the first oxide semiconductor region with the gate insulating film interposed therebetween. Hydrogen or a rare gas is added to the second oxide semiconductor regions.

Claims

1. A semiconductor device comprising:

a substrate;

a first insulating film over the substrate;

a gate electrode over the first insulating film;

a gate insulating film over the gate electrode;

an oxide semiconductor film over the gate insulating film, the oxide semiconductor film comprising a first oxide semiconductor region and a pair of second oxide semiconductor regions;

a source electrode and a drain electrode over the oxide semiconductor film;

a second insulating film over the oxide semiconductor film and between the source electrode and the drain electrode; and

a third insulating film over the source electrode, the oxide semiconductor film, the second insulating film, and the drain electrode,

wherein the oxide semiconductor film comprises indium, gallium, and zinc,

wherein the first oxide semiconductor region is between the pair of second oxide semiconductor regions,

wherein the first oxide semiconductor region comprises a crystalline region comprising c-axis alignment,

wherein the second insulating film overlaps with the first oxide semiconductor region,

wherein the third insulating film is in contact with each upper surface of the pair of second oxide semiconductor regions,

wherein an edge of the gate electrode and edges of the source electrode and the drain electrode overlap with each other, and

wherein the edges of the source electrode and the drain electrode and the first oxide semiconductor region do not overlap with each other.

2. The semiconductor device according to claim 1,

wherein the pair of second oxide semiconductor regions serves as a source region and a drain region, and

wherein the first oxide semiconductor region serves as a channel region.

3. The semiconductor device according to claim 1, wherein each of the pair of second oxide semiconductor regions comprises at least one kind of element selected from rare gas elements, or hydrogen.

4. The semiconductor device according to claim 3, wherein a concentration of at least one kind of element selected from rare gas elements, or hydrogen is higher than or equal to 5×

10¹⁸ atoms/cm³ and lower than or equal to 1×

10²² atoms/cm³.

5. The semiconductor device according to claim 1, wherein each of the pair of second oxide semiconductor regions is an amorphous region.

6. A semiconductor device comprising:

an oxide semiconductor film on an insulating surface, the oxide semiconductor film comprising a first oxide semiconductor region and a pair of second oxide semiconductor regions;

a gate electrode adjacent to the oxide semiconductor film; and

a source electrode and a drain electrode over the oxide semiconductor film;

wherein the oxide semiconductor film comprises indium, gallium, and zinc,

wherein the first oxide semiconductor region is between the pair of second oxide semiconductor regions,

wherein the first oxide semiconductor region comprises a crystalline region comprising c-axis alignment,

wherein an edge of the gate electrode and edges of the source electrode and the drain electrode overlap with each other, and

wherein the edges of the source electrode and the drain electrode and the first oxide semiconductor region do not overlap with each other.

7. The semiconductor device according to claim 6,

wherein the pair of second oxide semiconductor regions serves as a source region and a drain region, and

wherein the first oxide semiconductor region serves as a channel region.

8. The semiconductor device according to claim 6, wherein each of the pair of second oxide semiconductor regions comprises at least one kind of element selected from rare gas elements, or hydrogen.

9. The semiconductor device according to claim 8, wherein a concentration of at least one kind of element selected from rare gas elements, or hydrogen is higher than or equal to 5×

10¹⁸ atoms/cm³ and lower than or equal to 1×

10²² atoms/cm³.