Substrate, method for fabricating the same, and display device

• US 8,829,517 B2
• Filed: 07/14/2011
• Issued: 09/09/2014
• Est. Priority Date: 07/21/2010
• Status: Active Grant

• Current Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Original Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Inventors: Hara, Yoshihito, Nakata, Yukinobu
• Primary Examiner(s): Stark, Jarrett
• Assistant Examiner(s): Hoque, Mohammad M
• Application Number:
  US13/810,944
• Publication Number:
  US 20130270548A1
• Time in Patent Office: 1,153 Days
• Field of Search: 257/43, 257/59, 257/57, 438/85, 438/86, 438/104, 438/754
• US Class Current: 257/43
• CPC Class Codes: G02F 1/13458 Terminal pads
• CPC Class Codes: G02F 1/136227 Through-hole connection of the pixel electrode to the active element through an insulation layer
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/78693 the semiconducting oxide being amorphous
• CPC Class Codes: H10K 59/131 Interconnections, e.g. wiring lines or terminals

Abstract

A TFT substrate (20a) includes: an insulating substrate (10a); a plurality of source terminals (15) located on the insulating substrate (10a); and a first terminal cover (24) covering part of each of the source terminals (15) and made of an oxide semiconductor. The first terminal cover (24) is removed in a region R between adjacent ones of the source terminals (15).

Claims

1. A substrate, comprising:

a plurality of terminals located on an insulating substrate and made of a metal;

a terminal cover covering part of each of the terminals and made of an oxide semiconductor;

an insulating film located between the terminal cover and the terminals and having a contact hole in which each of the terminals is partially exposed; and

another terminal cover made of a conductor and located on surfaces of the terminal cover and the contact hole, wherein

the terminal cover and the another terminal cover are removed in a region between each adjacent ones of the terminals,

an end surface of the terminal cover facing the region between the terminals is flush with an end surface of the another terminal cover facing the region between the terminals, and

a pitch between each adjacent ones of the terminals is from 5 μ

m to 30 μ

m.

2. The substrate of claim 1, wherein

the oxide semiconductor is a metal oxide containing at least a material selected from the group consisting of indium (In), gallium (Ga), aluminium (Al), copper (Cu), nickel (Ni), hafnium (Hf), and zinc (Zn).

3. The substrate of claim 2, wherein

the oxide semiconductor is indium gallium zinc oxide.

4. The substrate of claim 1, further comprising

a thin-film transistor including an oxide semiconductor layer.

5. The substrate of claim 4, wherein

the oxide semiconductor is indium gallium zinc oxide.

6. A display device, comprising:

the substrate of claim 1;

another substrate opposing the substrate; and

a display medium layer sandwiched between the substrate and the another substrate.

7. The display device of claim 6, wherein

the display medium layer is a liquid crystal layer.

8. A display device, comprising:

the substrate of claim 1; and

a display element located on the substrate.

9. The display device of claim 8, wherein

the display element is an organic EL display element.