Rare earth doped layer or substrate for light conversion
First Claim
1. A solid state light emitting device, comprising:
- a light emitting diode comprising;
an active region of epitaxial semiconductor material; and
a pair of oppositely doped layers, both comprising epitaxial semiconductor material on opposite sides of said active region, said active region emitting light at a predetermined wavelength in response to an electrical bias across said doped layers; and
an absorption layer of epitaxial semiconductor material integral to said light emitting diode and doped with at least one rare earth or transition element, said active region, doped layers and absorption layer arranged directly in succession to one another and on a growth substrate, said absorption layer absorbing at least some of the light emitted from said active region and re-emitting at least one different wavelength of light, wherein said absorption layer comprises a plurality of doped sections, each of said doped sections are doped with a different rare earth or transition element and emitting light in a distinct wavelength range.
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Accused Products
Abstract
A solid state light emitting device comprising an emitter structure having an active region of semiconductor material and a pair of oppositely doped layers of semiconductor material on opposite sides of the active region. The active region emits light at a predetermined wavelength in response to an electrical bias across the doped layers. An absorption layer of semiconductor material is included that is integral to said emitter structure and doped with at least one rare earth or transition element. The absorption layer absorbs at least some of the light emitted from the active region and re-emits at least one different wavelength of light. A substrate is included with the emitter structure and absorption layer disposed on the substrate.
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Citations
24 Claims
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1. A solid state light emitting device, comprising:
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a light emitting diode comprising; an active region of epitaxial semiconductor material; and a pair of oppositely doped layers, both comprising epitaxial semiconductor material on opposite sides of said active region, said active region emitting light at a predetermined wavelength in response to an electrical bias across said doped layers; and an absorption layer of epitaxial semiconductor material integral to said light emitting diode and doped with at least one rare earth or transition element, said active region, doped layers and absorption layer arranged directly in succession to one another and on a growth substrate, said absorption layer absorbing at least some of the light emitted from said active region and re-emitting at least one different wavelength of light, wherein said absorption layer comprises a plurality of doped sections, each of said doped sections are doped with a different rare earth or transition element and emitting light in a distinct wavelength range. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A solid state light emitting device, comprising:
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an emitter structure on a substrate, said emitter structure comprising; an active region of semiconductor material; a pair of oppositely doped layers of semiconductor material on opposite sides of said active region, said active region emitting light at a predetermined wavelength in response to an electrical bias across said doped layers; a plurality of ohmic metals on said oppositely doped layers to apply said bias to said active region, wherein said bias is locally concentrated and said active region emits light primarily below the respective said ohmic metals; and an absorption layer of semiconductor material integral to said emitter structure and doped with at least one rare earth or transition element, said absorption layer absorbing at least some of the light emitted from said active region and re-emitting at least one different wavelength of light, said absorption layer further comprising a plurality of layer sections each of which is doped with one or more rare earth or transition elements in a different concentration or combination than the others of said layer sections, said ohmic metals aligned with said plurality of layer sections such that one or more portions of said active region emits light that will be primarily absorbed by its aligned one of said plurality of layer sections and re-emitted as a different color. - View Dependent Claims (19, 20, 21, 22, 23)
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24. A solid state light emitting device, comprising:
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a light emitting diode comprising; an active region of epitaxial semiconductor material; a pair of oppositely doped layers, both comprising epitaxial semiconductor material on opposite sides of said active region, said active region emitting light at a predetermined wavelength in response to an electrical bias across said doped layers; and an absorption layer of epitaxial semiconductor material integral to said light emitting diode and doped with at least one rare earth or transition element, said active region, doped layers and absorption layer arranged directly in succession to one another and on a growth substrate, said absorption layer absorbing at least some of the light emitted from said active region and re-emitting at least one different wavelength of light, wherein said absorption layer comprises a plurality of layers of semiconductor materials, each of which is doped with one or more rare earth transition elements in a different combination or concentration than the others of said plurality of layers.
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Specification