Semiconductor device including a dielectric structure in a trench
First Claim
1. A semiconductor device, comprising:
- a trench extending into a drift zone of a semiconductor body from a first surface;
a gate electrode in the trench;
a body region adjoining a sidewall of the trench;
a dielectric structure in the trench, the dielectric structure directly adjoining the semiconductor body along the bottom of the trench, and the dielectric structure including a high-k dielectric in a lower part of the trench, wherein the high-k dielectric includes a dielectric constant higher than that of SiO2; and
wherein an extension of the high-k dielectric in a vertical direction perpendicular to the first surface is limited between a bottom side of the trench and a level where a bottom side of the body region adjoins the sidewall of the trench; and
wherein the high-k dielectric is spaced from the bottom side of the trench along the vertical direction by a portion of the dielectric structure including a first dielectric layer.
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Accused Products
Abstract
A semiconductor device includes a trench extending into a drift zone of a semiconductor body from a first surface. The semiconductor device further includes a gate electrode in the trench and a body region adjoining a sidewall of the trench. The semiconductor device further includes a dielectric structure in the trench. The dielectric structure includes a high-k dielectric in a lower part of the trench. The high-k dielectric includes a dielectric constant higher than that of SiO2. An extension of the high-k dielectric in a vertical direction perpendicular to the first surface is limited between a bottom side of the trench and a level where a bottom side of the body region adjoins the sidewall of the trench.
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Citations
26 Claims
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1. A semiconductor device, comprising:
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a trench extending into a drift zone of a semiconductor body from a first surface; a gate electrode in the trench; a body region adjoining a sidewall of the trench; a dielectric structure in the trench, the dielectric structure directly adjoining the semiconductor body along the bottom of the trench, and the dielectric structure including a high-k dielectric in a lower part of the trench, wherein the high-k dielectric includes a dielectric constant higher than that of SiO2; and
wherein an extension of the high-k dielectric in a vertical direction perpendicular to the first surface is limited between a bottom side of the trench and a level where a bottom side of the body region adjoins the sidewall of the trench; and
wherein the high-k dielectric is spaced from the bottom side of the trench along the vertical direction by a portion of the dielectric structure including a first dielectric layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A semiconductor device, comprising:
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a trench extending into a drift zone of a semiconductor body from a first surface; a gate electrode in the trench; a body region adjoining a sidewall of the trench; a dielectric structure in the trench, the dielectric structure including a charged dielectric in a lower part of the trench, wherein a net charge of the dielectric corresponds to a surface charge of the charged dielectric ranging between 1011 cm−
2 and 1013 cm−
2; and
wherein an extension of the charged dielectric in a vertical direction perpendicular to the first surface is limited between a bottom side of the trench and a level where a bottom side of the body region adjoins the sidewall of the trench. - View Dependent Claims (18, 19, 20, 21, 22, 23, 24, 25, 26)
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Specification