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Semiconductor device including a dielectric structure in a trench

  • US 8,829,562 B2
  • Filed: 07/24/2012
  • Issued: 09/09/2014
  • Est. Priority Date: 07/24/2012
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • a trench extending into a drift zone of a semiconductor body from a first surface;

    a gate electrode in the trench;

    a body region adjoining a sidewall of the trench;

    a dielectric structure in the trench, the dielectric structure directly adjoining the semiconductor body along the bottom of the trench, and the dielectric structure including a high-k dielectric in a lower part of the trench, wherein the high-k dielectric includes a dielectric constant higher than that of SiO2; and

    wherein an extension of the high-k dielectric in a vertical direction perpendicular to the first surface is limited between a bottom side of the trench and a level where a bottom side of the body region adjoins the sidewall of the trench; and

    wherein the high-k dielectric is spaced from the bottom side of the trench along the vertical direction by a portion of the dielectric structure including a first dielectric layer.

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