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Semiconductor device including an IGBT

  • US 8,829,564 B2
  • Filed: 07/08/2013
  • Issued: 09/09/2014
  • Est. Priority Date: 03/31/2008
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a semiconductor substrate having a first main surface and a second main surface facing each other; and

    an element having a gate electrode formed on a side of said first main surface, a first electrode formed on the side of said first main surface and a second electrode formed in contact with said second main surface, said element generating an electric field in a channel by a voltage applied to said gate electrode, and controlling a current between said first electrode and said second electrode by the electric field in said channel, whereinsaid second main surface has a center line average roughness of greater than 0 and not more than 200 nm.

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