Stackable semiconductor package with encapsulant and electrically conductive feed-through
First Claim
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1. A device, comprising:
- a first semiconductor chip having an active surface with a contact pad thereon;
a molding compound layer embedding the first semiconductor chip such that the active surface and the contact pad are exposed from the molding compound layer, the molding compound having a first surface and a second surface parallel to the first surface;
a first electrically conductive layer applied to the first surface of the molding compound layer, wherein the active surface of the first semiconductor chip faces away from the first electrically conductive layer;
a substantially cylindrical through hole arranged in the molding compound layer extending from the first surface to the second surface;
a first dielectric layer on the first surface and the first electrically conductive layer and having an opening therein to form an external contact pad situated on the first surface laterally displaced from the through hole such that the external contact pad is arranged completely outside a periphery of the through hole, and such that there is no opening in the first dielectric layer forming an external contact directly over the through hole;
a solder material filling the through hole, wherein the first electrically conductive layer electrically couples the solder material to the external contact pad that is laterally displaced relative to the through hole;
a second electrically conductive layer applied to the second surface of the molding compound layer that is arranged over the active surface of the first semiconductor chip, and wherein the second electrically conductive layer electrically couples the contact pad of the first semiconductor chip to the solder material; and
a dielectric layer on the second surface and the second electrically conductive layer and having an opening therein to form a second external contact pad situated on the second surface of the molding compound layer and laterally displaced from the through hole such that the second external contact pad is arranged completely outside a periphery of the through hole and no external contact pad is on the second surface within the periphery of the through hole, and wherein the second electrically conductive layer electrically couples the second external contact pad to the solder material.
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Abstract
A description is given of a device comprising a first semiconductor chip, a molding compound layer embedding the first semiconductor chip, a first electrically conductive layer applied to the molding compound layer, a through hole arranged in the molding compound layer, and a solder material filling the through hole.
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Citations
21 Claims
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1. A device, comprising:
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a first semiconductor chip having an active surface with a contact pad thereon; a molding compound layer embedding the first semiconductor chip such that the active surface and the contact pad are exposed from the molding compound layer, the molding compound having a first surface and a second surface parallel to the first surface; a first electrically conductive layer applied to the first surface of the molding compound layer, wherein the active surface of the first semiconductor chip faces away from the first electrically conductive layer; a substantially cylindrical through hole arranged in the molding compound layer extending from the first surface to the second surface; a first dielectric layer on the first surface and the first electrically conductive layer and having an opening therein to form an external contact pad situated on the first surface laterally displaced from the through hole such that the external contact pad is arranged completely outside a periphery of the through hole, and such that there is no opening in the first dielectric layer forming an external contact directly over the through hole; a solder material filling the through hole, wherein the first electrically conductive layer electrically couples the solder material to the external contact pad that is laterally displaced relative to the through hole; a second electrically conductive layer applied to the second surface of the molding compound layer that is arranged over the active surface of the first semiconductor chip, and wherein the second electrically conductive layer electrically couples the contact pad of the first semiconductor chip to the solder material; and a dielectric layer on the second surface and the second electrically conductive layer and having an opening therein to form a second external contact pad situated on the second surface of the molding compound layer and laterally displaced from the through hole such that the second external contact pad is arranged completely outside a periphery of the through hole and no external contact pad is on the second surface within the periphery of the through hole, and wherein the second electrically conductive layer electrically couples the second external contact pad to the solder material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A device, comprising:
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a first semiconductor chip having a first chip surface that includes an active surface with a contact pad thereon and a second chip surface opposite the first chip surface; a molding compound layer embedding the first semiconductor chip such that the active surface and the contact pad are exposed from the molding compound layer and the active surface and the contact pad are completely free of the molding compound layer and the molding compound layer is on the second chip surface, the molding compound layer having a first molding compound surface and a second molding compound surface opposite the first molding compound surface, the first and second molding compound surfaces each being generally planar; a first electrically conductive layer applied to the first molding compound surface; a substantially cylindrical through hole arranged in the molding compound layer extending from the first molding compound surface to the second molding compound surface; a first dielectric layer on the first molding compound surface and the first electrically conductive layer and having an opening therein to form an external contact pad situated on the first molding compound surface and laterally displaced from the through hole such that the external contact pad is arranged completely outside a periphery of the through hole and there is no opening in the first dielectric layer forming an external contact pad on the first molding compound surface directly over the through hole; and a second electrically conductive layer covering an inner wall surface of the through hole and extending above the first molding compound surface and below the second molding compound surface, wherein the through hole is not entirely filled with the material of the second electrically conductive layer and the first electrically conductive layer electrically couples the second electrically conductive layer to the external contact pad. - View Dependent Claims (13, 14, 15, 16, 17)
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18. A device, comprising:
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a first semiconductor chip having an active surface with a first contact pad thereon; a first molding compound layer embedding the first semiconductor chip such that the active surface and the first contact pad are exposed from the first molding compound, the first molding compound having a first surface and a second surface parallel to the first surface; a first electrically conductive layer applied to the first surface of the first molding compound layer of the first semiconductor chip, wherein the active surface of the first semiconductor chip faces away from the first electrically conductive layer; a first substantially cylindrical through hole extending from the first surface to the second surface of the first molding compound layer embedding the first semiconductor chip; a first dielectric layer on the first surface and the first electrically conductive layer and having an opening therein to form a first external contact pad situated on the first surface of the first molding compound layer laterally displaced relative to the first through hole such that the first external contact pad is arranged completely outside a periphery of the first through hole and such that there is no opening in the first dielectric layer forming an external contact directly over the first through hole; a second electrically conductive layer electrically coupled to the first contact pad; a second semiconductor chip having a second contact pad; a second molding compound layer embedding the second semiconductor chip, the second molding compound layer having a third, surface and a fourth surface parallel to the third surface; a third electrically conductive layer applied to the second molding compound layer of the second semiconductor chip; a second substantially cylindrical through hole extending from the third surface to the fourth surface of the second molding compound layer embedding the second semiconductor chip; a second dielectric layer on the third surface and the third electrically conductive layer and having an opening therein to form a second external contact pad laterally displaced relative to the second through hole; a fourth electrically conductive layer electrically coupled to the second contact pad; wherein the first and second semiconductor chips are stacked on each other; a solder material filling the first and second through holes, wherein the first contact pad is electrically coupled to the first external contact pad via the solder material and the first and second electrically conductive layers and the second contact pad is electrically coupled to the second external contact pad via the solder material and the third and fourth electrically conductive layers; and means for electrically coupling the second external contact pad to the first external contact pad.
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19. A device, comprising:
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a first semiconductor chip having an active surface with a contact pad thereon; a second semiconductor chip, wherein the first and second semiconductor chips are stacked on each other. a molding compound layer embedding the first semiconductor chip such that the active surface and the contact pad are exposed from the molding compound layer, the molding compound having a first surface and a second surface parallel to the first surface; a first electrically conductive layer applied to the first surface of the molding compound layer, wherein the active surface of the first semiconductor chip faces away from the first electrically conductive layer; a substantially cylindrical through hole arranged in the molding compound layer extending from the first surface to the second surface; a first dielectric layer on the first surface and the first electrically conductive layer and having an opening therein to form an external contact pad situated on the first surface laterally displaced from the through hole such that the external contact pad is arranged completely outside a periphery of the through hole, and such that there is no opening in the first dielectric layer forming an external contact directly over the through hole; and a solder material filling the through hole, wherein the first electrically conductive layer electrically couples the solder material to the external contact pad that is laterally displaced relative to the through hole. - View Dependent Claims (20, 21)
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Specification