Piezoelectric resonator operating in thickness shear mode
First Claim
1. Acoustic wave resonator device comprising a resonant layer that comprises a series of laterally adjacent areas of first and second dielectric materials, of which one or both materials are piezoelectric, wherein either:
- (a) the first dielectric material is a piezoelectric and the second dielectric material is a non-piezoelectric;
or(b) the first and second dielectric materials are piezoelectrics of different piezoelectric properties;
wherein the piezoelectric material is AlN, ZnO or GaN; and
wherein the resonator comprises an electrode system configured for excitation of shear thickness resonance of acoustic waves.
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Abstract
An acoustic wave resonator device comprising a resonant layer that comprises a series of side-by-side areas of first and second dielectric materials. In one embodiment the first dielectric material is a piezoelectric, in particular the first dielectric material can be a piezoelectric and the second dielectric material can be non-piezoelectric. In another embodiment, the first dielectric material is a piezoelectric of first polarity and the second dielectric material is a piezoelectric of opposite polarity or different polarity. Where needed, the resonant layer is supported on a reflector composed of series of layers of high acoustic impedance material(s) alternating with layers of low acoustic impedance material(s). For example, the reflector comprises AlN, Al2O3, Ta2O5, HfO2 or W as high impedance material and SiO2 as low impedance material.
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Citations
16 Claims
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1. Acoustic wave resonator device comprising a resonant layer that comprises a series of laterally adjacent areas of first and second dielectric materials, of which one or both materials are piezoelectric, wherein either:
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(a) the first dielectric material is a piezoelectric and the second dielectric material is a non-piezoelectric;
or(b) the first and second dielectric materials are piezoelectrics of different piezoelectric properties; wherein the piezoelectric material is AlN, ZnO or GaN; and wherein the resonator comprises an electrode system configured for excitation of shear thickness resonance of acoustic waves. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. Acoustic wave resonator device comprising a resonant layer that
comprises a series of laterally adjacent areas of first and second dielectric materials, of which one or both materials are piezoelectric, wherein either: -
(a) the first dielectric material is a piezoelectric and the second dielectric material is a non-piezoelectric;
or(b) the first and the second dielectric materials are piezoelectrics of different piezoelectric properties; wherein the piezoelectric material is AlN, ZnO or GaN; and wherein the resonator comprises an electrode system configured for excitation of a pure shear thickness resonance of the acoustic waves.
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Specification