Method for process window optimized optical proximity correction

• US 8,832,610 B2
• Filed: 04/01/2013
• Issued: 09/09/2014
• Est. Priority Date: 02/03/2006
• Status: Active Grant

• Current Assignee: ASML Netherlands BV (ASML Holding NV)
• Original Assignee: ASML Netherlands BV (ASML Holding NV)
• Inventors: Ye, Jun, Li, Jiangwei, Hunsche, Stefan
• Primary Examiner(s): Whitmore, Stacy
• Application Number:
  US13/854,872
• Publication Number:
  US 20130219348A1
• Time in Patent Office: 526 Days
• Field of Search: 716/50, 716/53, 716/55
• US Class Current: 716/53
• CPC Class Codes: G03F 1/36 Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
• CPC Class Codes: G06F 30/00 Computer-aided design [CAD]

Abstract

One embodiment of a method for process window optimized optical proximity correction includes applying optical proximity corrections to a design layout, simulating a lithography process using the post-OPC layout and models of the lithography process at a plurality of process conditions to produce a plurality of simulated resist images. A weighted average error in the critical dimension or other contour metric for each edge segment of each feature in the design layout is determined, wherein the weighted average error is an offset between the contour metric at each process condition and the contour metric at nominal condition averaged over the plurality of process conditions. A retarget value for the contour metric for each edge segment is determined using the weighted average error and applied to the design layout prior to applying further optical proximity corrections.

Claims

1. A method, implemented by a computer, for optimizing a process window for a design layout, the method comprising:

obtaining a first layout corresponding to the design layout, the first layout including features;

identifying a desired process window of a lithographic process for imaging the design layout, the desired process window including at least a nominal condition of the lithographic process and two or more offset conditions of the lithographic process;

identifying one or more models of the lithographic process corresponding to the desired process window, wherein the one or more models are calibrated for the nominal condition and the two or more offset conditions of the lithographic process;

simulating, using the computer, the lithographic process using the first layout and the one or more models of the lithographic process to produce one or more simulated images;

determining errors in the features between the one or more simulated images and the design layout, the determined errors characterizing differences in imaging results for the features between the nominal condition and the two or more offset conditions;

adjusting target values of edges of features in the first layout to cancel the determined errors; and

performing optical proximity correction (OPC) techniques on the features in the first layout using the adjusted target values and the nominal condition to produce a post-OPC layout.

2. The method of claim 1, wherein the first layout is a pre-OPC layout corresponding to the design layout.

3. The method of claim 2, wherein the first layout includes resolution enhancement technique (RET) features.

4. The method of claim 3, wherein the RET features include one or more of phase shifting and assist features.

5. The method of claim 1, wherein the one or more models comprise models respectively calibrated for the nominal condition and offset conditions.

6. The method of claim 1, wherein the one or models comprises a single model that is calibrated for the nominal condition and offset conditions.

7. The method of claim 1, wherein the one or more models comprises a single model that is an average of models calibrated for the nominal condition and offset conditions.

8. The method of claim 1, wherein each of the features includes an edge segment, and wherein determining errors includes:

determining a, simulated contour for each edge segment of certain features of the first layout in each of the one or more simulated images;

determining a weighted average error in a contour metric for each edge segment over the desired process window, wherein the error in the contour metric is an offset between the contour metric at each of the offset process conditions and the contour metric at the nominal condition.

9. The method of claim 8,

wherein adjusting includes determining a retarget value for the contour metric for each edge segment using the weighted average error and

applying each retarget value to the corresponding edge to produce a retargeted layout, and

wherein performing OPC techniques includes applying optical proximity corrections to the retargeted layout to produce the post-OPC layout.

10. The method of claim 8, wherein the contour metric is critical dimension.

11. The method of claim 8, wherein the contour metric is edge placement error.

12. The method of claim 9, wherein determining the retarget value includes performing a numerical analysis of a local mask error factor.

13. The method of claim 9, wherein determining the retarget value includes performing a numerical analysis of a normalized image log slope.

14. The method of claim 1, further comprising:

dissecting one or more of the features into edge segments; and

assigning control points to certain of the edge segments,

wherein determining errors includes;

determining a simulated contour for each edge segment of the one or more features of the first layout using the one or more simulated images; and

determining an error in a contour metric at each control point for each certain edge segment using the one or more simulated images, wherein the error in the contour metric is an offset between the simulated contour and the design layout.

15. The method of claim 14, further comprising:

determining if a figure of merit for the contour metric of each certain edge segment over the one or more simulated images is satisfied; and

if the figure of merit is not satisfied, calculating, by the computer, an edge correction amount at each control point of each certain edge segment of the one or more features, wherein the edge correction amount is determined by the errors of the contour metric using the one or more simulated images over the desired process window,

wherein performing OPC techniques includes adjusting a position of one or more of the edge segments of the one or more features according to the corresponding edge correction amount to produce the post-OPC layout.

16. The method of claim 15, wherein the figure of merit is satisfied when a total error for the contour metric of each edge segment over the one or more simulated images is minimized.

17. The method of claim 15, wherein the figure of merit is satisfied when a total error for the contour metric of each edge segment over the one or more simulated images is below a predetermined threshold.

18. The method of claim 14, wherein the contour metric is critical dimension.

19. The method of claim 14, wherein the contour metric is edge placement error.

20. The method of claim 15, wherein the edge correction amount is proportional to a negation of the weighted average error of the contour metric in the simulated contours over the desired process window.

21. The method of claim 15, wherein the edge correction amount is proportional to a negation of the maximum error of the contour metric in the simulated contours over the desired process window.

22. The method of claim 1, wherein the offset conditions include offsets from the nominal condition in one or more of focus, exposure dose, film thickness, reflectivity, numerical aperture, illumination, lens aberrations, resist bake temperature, resist development time, and etch time.