TiN;C;modified surface for an implantable device and a method of producing the same

• US 8,834,555 B2
• Filed: 01/28/2013
• Issued: 09/16/2014
• Est. Priority Date: 11/30/2001
• Status: Active Grant

• Current Assignee: Abbott Cardiovascular Systems Incorporated (Abbott Laboratories Incorporated)
• Original Assignee: Abbott Cardiovascular Systems Incorporated (Abbott Laboratories Incorporated)
• Inventors: Malik, Shamim M., Mukherjee, Avijit
• Primary Examiner(s): SEVERSON, RYAN J
• Application Number:
  US13/752,254
• Publication Number:
  US 20130172974A1
• Time in Patent Office: 596 Days
• Field of Search: 623/1.15, 422/50, 422/63, 422/500, 424/400, 424/409, 424/417, 424/422, 424/423, 424/484, 427 224- 226, 427/2.3, 427/528, 427/530, 435/289.1, 435/293.1, 435/299.1
• US Class Current: 623/1.15
• CPC Class Codes: A61F 2/82 Devices providing patency to, or preventing collapsing of, tubular structures of the body, e.g. stents stent-grafts for tubular structures of the body other than blood vessels A61F2/04; stent-grafts for blood vessels A61F2/07; instruments specially adapted for placement or removal of stents or stent-grafts A61F2/95; for closing wounds, or holding wounds closed A61B17/04 - A61B17/115; dilators A61M29/00
• CPC Class Codes: A61L 31/022 Metals or alloys
• CPC Class Codes: A61L 31/088 Other specific inorganic materials not covered by A61L31/084 or A61L31/086
• CPC Class Codes: C23C 14/0036 Reactive sputtering
• CPC Class Codes: C23C 14/0664 Carbonitrides

Abstract

Implantable devices, such as stents, having a surface modified with TiN_xC_y are disclosed.

Claims

1. An implantable medical device comprising a TiN_xC_y compound implanted at a depth within at least a region of a surface of the device.

2. The device of claim 1, wherein x is 1 and y is 1 or 2.

3. The device of claim 1, wherein the depth of the implanted TiN_xC_y compound is not greater than about 2000 Å

from the surface of the device.

4. The device of claim 1, additionally comprising a layer of a second TiN_xC_y compound formed over at least a portion of the region of the surface of the device implanted with the TiN_xC_y compound;

wherein the second TiN_xC_y compound may be the same as or different from the TiN_xC_y compound which is implanted into the surface of the device.

5. The device of claim 4, wherein x is 1 and y is 1 or 2 for the second TiN_xC_y compound and the implanted TiN_xC_y compound.

6. The device of claim 1, wherein the device is a stent.

7. The stent of claim 6, wherein the stent is made from stainless steel.

8. An implantable medical device comprising a TiN_xC_y compound deposited on at least a region of a surface of the device;

and at least a portion of the region with the TiN_xC_y compound deposited on the surface comprising;

N implanted at a depth within the surface of the device;

Ti implanted at a depth within the surface of the device;

TiN implanted at a depth within the surface of the device;

TiN implanted at a depth within the surface of the device, and at least a portion of the portion implanted with TiN also comprises N or Ti implanted at a depth within the surface of the device, wherein at least a portion of the implanted N or implanted Ti is beneath the implanted TiN;

a second TiN_xC_y compound implanted at a depth within the surface of the device, the second TiN_xC_y compound being the same as or different from the TiN_xC_y compound which is deposited on the surface of the device, and at least a portion of the portion comprising the implanted second TiN_xC_y compound also comprises TiN implanted at a depth within the surface of the device, wherein at least a portion of the implanted TiN is beneath the implanted second TiN_xC_y compound;

a second TiN_xC_y compound implanted at a depth within the surface of the device, the second TiN_xC_y compound being the same as or different from the TiN_xC_y compound which is deposited on the surface of the device, and at least a portion of the portion comprising the implanted TiN_xC_y compound also comprises N or Ti implanted at a depth within the surface of the device, wherein at least a portion of the implanted N or implanted Ti is beneath the implanted TiN_xC_y compound;

or

a second TiN_xC_y compound implanted at a depth within the surface of the device, the second TiN_xC_y compound being the same as or different from the TiN_xC_y compound which is deposited on the surface of the device, and at least a portion of the portion comprising the implanted TiN_xC_y compound also comprises TiN implanted at a depth within the surface of the device, wherein at least a portion of the implanted TiN is beneath the implanted TiN_xC_y compound; and

further at least a portion of the portion comprising implanted TiN which is beneath the implanted TiN_xC_y compound also comprises Ti or N implanted at a depth within the surface of the device, wherein at least a portion of the implanted Ti or implanted N is beneath the implanted TiN beneath the implanted TiN_xC_y compound.

9. The device of claim 8, wherein x is 1 and y is 1 or 2.

10. The device of claim 8, wherein the TiN_xC_y is exposed on the surface of the device.

11. The device of claim 8, wherein at least a portion of the region with the TiN_xC_y compound deposited on the surface comprises Ti implanted at a depth within the surface of the device.

12. The device of claim 8, wherein at least a portion of the region with the TiN_xC_y compound deposited on the surface comprises TiN implanted at a depth within the surface of the device;

or at least a portion of the region with the TiN_xC_y compound deposited on the surface comprises TiN implanted at a depth within the surface of the device, and at least a portion of the portion implanted with TiN also comprises N or Ti implanted at a depth within the surface of the device, wherein at least a portion of the implanted N or implanted Ti is beneath the implanted TiN.

13. The device of claim 8, wherein at least a portion of the region with the TiN_xC_y compound deposited on the surface comprises a second TiN_xC_y compound implanted at a depth within the surface of the device, and at least a portion of the portion comprising the implanted second TiN_xC_y compound also comprises TiN implanted at a depth within the surface of the device, wherein at least a portion of the implanted TiN is beneath the implanted second TiN_xC_y compound;

wherein the second TiN_xC_y compound may be the same as or different from the TiN_xC_y compound which is deposited on the surface of the device.

14. The device of claim 13, wherein the depth of the implanted second TiN_xC_y compound is not greater than about 2000 Å

from the surface of the device.

15. The device of claim 8, wherein at least a portion of the region with the TiN_xC_y compound deposited on the surface comprises a second TiN_xC_y compound implanted at a depth within the surface of the device, the second TiN_xC_y compound being the same as or different from the TiN_xC_y compound which is deposited on the surface of the device, and at least a portion of the portion comprising the implanted TiN_xC_y compound also comprises TiN implanted at a depth within the surface of the device, wherein at least a portion of the implanted TiN is beneath the implanted TiN_xC_y compound;

and further at least a portion of the portion comprising implanted TiN which is beneath the implanted TiN_xC_y compound also comprises Ti or N implanted at a depth within the surface of the device, wherein at least a portion of the implanted Ti or implanted N is beneath the implanted TiN beneath the implanted TiN_xC_y compound.

16. The device of claim 15, wherein the depth of the implanted TiN compound is not greater than about 2000 Å

from the surface of the device.

17. The device of claim 8, wherein the device is a stent.

18. The stent of claim 17, wherein the stent is made from stainless steel.

19. The device of claim 8, wherein at least a portion of the region with the TiN_xC_y compound deposited on the surface comprises:

Ti implanted at a depth within the surface of the device;

TiN implanted at a depth within the surface of the device;

TiN implanted at a depth within the surface of the device, and at least a portion of the portion implanted with TiN also comprises N or Ti implanted at a depth within the surface of the device, wherein at least a portion of the implanted N or implanted Ti is beneath the implanted TiN;

a second TiN_xC_y compound implanted at a depth within the surface of the device, the second TiN_xC_y compound being the same as or different from the TiN_xC_y compound which is deposited on the surface of the device, and at least a portion of the portion comprising the implanted second TiN_xC_y compound also comprises TiN implanted at a depth within the surface of the device, wherein at least a portion of the implanted TiN is beneath the implanted second TiN_xC_y compound;

a second TiN_xC_y compound implanted at a depth within the surface of the device, the second TiN_xC_y compound being the same as or different from the TiN_xC_y compound which is deposited on the surface of the device, and at least a portion of the portion comprising the implanted TiN_xC_y compound also comprises N or Ti implanted at a depth within the surface of the device, wherein at least a portion of the implanted N or implanted Ti is beneath the implanted TiN_xC_y compound;

or

a second TiN_xC_y compound implanted at a depth within the surface of the device, the second TiN_xC_y compound being the same as or different from the TiN_xC_y compound which is deposited on the surface of the device, and at least a portion of the portion comprising the implanted TiN_xC_y compound also comprises TiN implanted at a depth within the surface of the device, wherein at least a portion of the implanted TiN is beneath the implanted TiN_xC_y compound; and

further comprises a portion of the portion comprising implanted TiN which is beneath the implanted TiN_xC_y compound also comprises Ti or N implanted at a depth within the surface of the device, wherein at least a portion of the implanted Ti or implanted N is beneath the implanted TiN beneath the implanted TiN_xC_y compound.

20. A stent comprising a layer of TiN_xC_y exposed on a surface of the stent, the stent having a surface material different than TiN_xC_y and a compound comprising Ti, or TiN disposed beneath the layer of TiN_xC_y such that the compound is blended with the surface material of the stent.

21. The stent of claim 20, wherein a region of the layer of TiN_xC_y is implanted at a depth within the surface of the stent.