Defect reduction in seeded aluminum nitride crystal growth
First Claim
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1. A method for growing single-crystal aluminum nitride (AlN), the method comprising:
- providing a holder sized and shaped to receive an AlN seed, the holder comprising a substantially impervious backing plate;
disposing an AlN seed and a foil on the backing plate with the foil between the AlN seed and the backing plate; and
depositing aluminum and nitrogen onto the AlN seed under conditions suitable for growing single-crystal AlN originating at the AlN seed.
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Abstract
Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density≦100 cm−2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.
186 Citations
33 Claims
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1. A method for growing single-crystal aluminum nitride (AlN), the method comprising:
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providing a holder sized and shaped to receive an AlN seed, the holder comprising a substantially impervious backing plate; disposing an AlN seed and a foil on the backing plate with the foil between the AlN seed and the backing plate; and depositing aluminum and nitrogen onto the AlN seed under conditions suitable for growing single-crystal AlN originating at the AlN seed. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33)
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Specification