Sputtering target and method for manufacturing semiconductor device
First Claim
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1. A method for manufacturing a semiconductor device, the method comprising the steps of:
- forming a conductive film over a substrate;
etching the conductive film to form a gate electrode;
forming a gate insulating layer over the gate electrode;
forming an oxide semiconductor film over the gate insulating layer by a sputtering method using a sputtering target; and
performing heat treatment on the oxide semiconductor film,wherein the sputtering target comprises a sintered body of zinc oxide, gallium oxide, and indium oxide,wherein the oxide semiconductor film includes crystals with c-axis alignment after the heat treatment, andwherein concentration of each of alkali metals contained in the sintered body which is measured by SIMS is 5×
1016 cm−
3 or lower.
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Abstract
An object is to provide a deposition technique for depositing an oxide semiconductor film. Another object is to provide a method for manufacturing a highly reliable semiconductor element using the oxide semiconductor film. A novel sputtering target obtained by removing an alkali metal, an alkaline earth metal, and hydrogen that are impurities in a sputtering target used for deposition is used, whereby an oxide semiconductor film containing a small amount of those impurities can be deposited.
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Citations
16 Claims
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1. A method for manufacturing a semiconductor device, the method comprising the steps of:
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forming a conductive film over a substrate; etching the conductive film to form a gate electrode; forming a gate insulating layer over the gate electrode; forming an oxide semiconductor film over the gate insulating layer by a sputtering method using a sputtering target; and performing heat treatment on the oxide semiconductor film, wherein the sputtering target comprises a sintered body of zinc oxide, gallium oxide, and indium oxide, wherein the oxide semiconductor film includes crystals with c-axis alignment after the heat treatment, and wherein concentration of each of alkali metals contained in the sintered body which is measured by SIMS is 5×
1016 cm−
3 or lower. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method for manufacturing a semiconductor device, the method comprising the steps of:
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forming a conductive film over a substrate; etching the conductive film to form a gate electrode; forming a gate insulating layer over the gate electrode; forming an oxide semiconductor film over the gate insulating layer by a sputtering method using a sputtering target, and performing heat treatment on the oxide semiconductor film, wherein the substrate is heated in the step of forming the oxide semiconductor film, wherein the sputtering target comprises a sintered body of zinc oxide, gallium oxide, and indium oxide, wherein the oxide semiconductor film includes crystals with c-axis alignment after the heat treatment, and wherein concentration of each of alkali metals contained in the sintered body which is measured by SIMS is 5×
1016 cm−
3 or lower. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
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Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
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Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
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InventorsYamazaki, Shunpei
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Primary Examiner(s)Abdelaziez, Yasser A
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Application NumberUS13/221,252Publication NumberTime in Patent Office1,113 DaysField of SearchNoneUS Class Current438/104CPC Class CodesC23C 14/081 of aluminium, magnesium or ...C23C 14/086 of zinc, germanium, cadmium...C23C 14/3414 Metallurgical or chemical a...H01L 21/02565 Oxide semiconducting materi...H01L 21/02631 Physical deposition at redu...H01L 29/66742 Thin film unipolar transistorsH01L 29/66969 of devices having semicondu...H01L 29/7869 having a semiconductor body...
