×

Semiconductor process

  • US 8,835,243 B2
  • Filed: 05/04/2012
  • Issued: 09/16/2014
  • Est. Priority Date: 05/04/2012
  • Status: Active Grant
First Claim
Patent Images

1. A semiconductor process, comprising:

  • forming a first structure and a second structure on a substrate;

    forming an oxide layer to entirely cover the first structure and the second structure;

    forming a nitride layer to entirely cover the oxide layer;

    performing a dry etching process to remove only a part of the nitride layer directly above the first structure, wherein the part of the nitride layer located on the sides of the first structure above the substrate and all of the oxide layer remain intact; and

    performing a wet etching process to entirely remove the nitride layer and the oxide layer on the first structure and the second structure.

View all claims
  • 2 Assignments
Timeline View
Assignment View
    ×
    ×