Method for improving thermal stability of metal gate
First Claim
Patent Images
1. A method of fabricating a semiconductor device comprising:
- providing a semiconductor substrate;
forming a gate structure on the substrate, the gate structure including a dummy gate, an interfacial layer, and a dielectric layer;
removing the dummy gate from the gate structure thereby forming a trench, such that the dielectric layer remains within the trench;
forming a work function metal layer partially filling the trench, the work function metal layer formed over the dielectric layer;
forming a fill metal layer filling a remainder of the trench;
performing a chemical mechanical polishing (CMP) to remove portions of the metal layers outside the trench; and
implanting one of Si, C, and Ge into a remaining portion of the fill metal layer.
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Abstract
The present disclosure provides a method of fabricating a semiconductor device that includes providing a semiconductor substrate, forming a gate structure on the substrate, the gate structure including a dummy gate, removing the dummy gate from the gate structure thereby forming a trench, forming a work function metal layer partially filling the trench, forming a fill metal layer filling a remainder of the trench, performing a chemical mechanical polishing (CMP) to remove portions of the metal layers outside the trench, and implanting Si, C, or Ge into a remaining portion of the fill metal layer.
14 Citations
20 Claims
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1. A method of fabricating a semiconductor device comprising:
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providing a semiconductor substrate; forming a gate structure on the substrate, the gate structure including a dummy gate, an interfacial layer, and a dielectric layer; removing the dummy gate from the gate structure thereby forming a trench, such that the dielectric layer remains within the trench; forming a work function metal layer partially filling the trench, the work function metal layer formed over the dielectric layer; forming a fill metal layer filling a remainder of the trench; performing a chemical mechanical polishing (CMP) to remove portions of the metal layers outside the trench; and implanting one of Si, C, and Ge into a remaining portion of the fill metal layer. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method of fabricating a semiconductor device comprising:
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providing a semiconductor substrate; forming a gate stack on the substrate, the gate stack including an interfacial layer, a dielectric layer, and a polysilicon layer; removing the polysilicon layer in the gate stack thereby forming a trench, the trench including the dielectric layer; depositing a first metal layer over the substrate partially filling the trench; depositing a second metal layer over the first metal layer filling a remainder of the trench; performing a chemical mechanical polishing (CMP) to remove portions of the first and second metal layers outside the trench; incorporating Si into the second metal layer during the deposition of the second metal layer or after performing the CMP. - View Dependent Claims (8, 9, 10, 11, 12)
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13. A method of fabricating a semiconductor device, comprising:
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providing a semiconductor substrate; forming a gate structure on the substrate, the gate structure including a dummy electrode and a barrier layer; removing the dummy electrode from the gate structure thereby forming a trench, such that the barrier layer remains within the trench; forming a work function metal layer partially filling the trench; forming an Al layer filling a remainder of the trench; performing a chemical mechanical polishing (CMP) to remove portions of the work function metal layer and Al layer outside the trench; and incorporating one of Si, C, and Ge into the Al layer during formation of the Al layer or after the CMP. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20)
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Specification