Semiconductor device, power diode, and rectifier

• US 8,835,917 B2
• Filed: 08/30/2011
• Issued: 09/16/2014
• Est. Priority Date: 09/13/2010
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei, Godo, Hiromichi, Kobayashi, Satoshi
• Primary Examiner(s): Abdelaziez, Yasser A
• Application Number:
  US13/220,992
• Publication Number:
  US 20120061662A1
• Time in Patent Office: 1,113 Days
• Field of Search: None
• US Class Current: 257/43
• CPC Class Codes: H01L 29/24 including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22 including organic materials H10K99/00
• CPC Class Codes: H01L 29/42356 Disposition, e.g. buried gate electrode H01L29/42324 and H01L29/4234 take precedence
• CPC Class Codes: H01L 29/78648 arranged on opposing sides of the channel
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

An object is to provide a semiconductor device having electrical characteristics such as high withstand voltage, low reverse saturation current, and high on-state current. In particular, an object is to provide a power diode and a rectifier which include non-linear elements. An embodiment of the present invention is a semiconductor device including a first electrode, a gate insulating layer covering the first electrode, an oxide semiconductor layer in contact with the gate insulating layer and overlapping with the first electrode, a pair of second electrodes covering end portions of the oxide semiconductor layer, an insulating layer covering the pair of second electrodes and the oxide semiconductor layer, and a third electrode in contact with the insulating layer and between the pair of second electrodes. The pair of second electrodes are in contact with end surfaces of the oxide semiconductor layer.

Claims

1. A semiconductor device comprising:

a first electrode;

a gate insulating layer over the first electrode;

an oxide semiconductor layer over the gate insulating layer;

a pair of second electrodes covering end portions of the oxide semiconductor layer;

an insulating layer over the pair of second electrodes; and

a third electrode over the insulating layer,

wherein the oxide semiconductor layer overlaps with the first electrode,

wherein the third electrode overlaps with the oxide semiconductor layer,

wherein a side surface of the oxide semiconductor layer in a channel width direction faces to the third electrode with the insulating layer interposed therebetween, and

wherein a width of the oxide semiconductor layer

2. The semiconductor device according to claim 1, further comprising n⁺ layers that are provided between the gate insulating layer and the oxide semiconductor layer, and the pair of second electrodes,

wherein the n⁺ layers cover the end portions of the oxide semiconductor layer.

3. The semiconductor device according to claim 1,

wherein a thickness of the oxide semiconductor layer is greater than or equal to 0.1 μ

m and less than or equal to 50 μ

m.

4. The semiconductor device according to claim 1,

wherein the oxide semiconductor layer is a crystalline oxide semiconductor layer, and

wherein the crystalline oxide semiconductor layer has an a-b plane parallel to a surface of the crystalline oxide semiconductor layer and has c-axis alignment in a direction perpendicular to the surface.

5. The semiconductor device according to claim 4,

wherein the crystalline oxide semiconductor layer includes one or both of zinc and indium.

6. The semiconductor device according to claim 1,

wherein the first electrode functions as a gate electrode,

wherein the pair of second electrodes functions as a source electrode and a drain electrode, and

wherein the third electrode functions as a back gate electrode.

25. The semiconductor device according to claim 1, wherein the oxide semiconductor layer comprises a first crystalline oxide semiconductor layer and a second crystalline oxide semiconductor layer.

7. A power diode comprising a plurality of non-linear elements, one of the plurality of non-linear elements comprising:

a first electrode;

a gate insulating layer over the first electrode;

an oxide semiconductor layer over the gate insulating layer;

a pair of second electrodes covering end portions of the oxide semiconductor layer;

an insulating layer over the pair of second electrodes; and

a third electrode over the insulating layer;

wherein the oxide semiconductor layer overlaps with the first electrode,

wherein the third electrode overlaps with the oxide semiconductor layer,

wherein a side surface of the oxide semiconductor layer in a channel width direction faces to the third electrode with the insulating layer interposed therebetween,

wherein a width of the oxide semiconductor layer is larger than a width of the third electrode in a channel length direction,

wherein one of the pair of second electrodes is in contact with the first electrode through an opening portion provided in the gate insulating layer, and

wherein the plurality of non-linear elements is connected in series in a forward direction.

8. The power diode according to claim 7, further comprising n⁺ layers that are provided between the gate insulating layer and the oxide semiconductor layer, and the pair of second electrodes,

wherein the n⁺ layers cover the end portions of the oxide semiconductor layer.

9. The power diode according to claim 7, wherein a thickness of the oxide semiconductor layer is greater than or equal to 0.1 μ

m and less than or equal to 50 μ

m.

10. The power diode according to claim 7,

wherein the oxide semiconductor layer is a crystalline oxide semiconductor layer, and

wherein the crystalline oxide semiconductor layer has an a-b plane parallel to a surface of the crystalline oxide semiconductor layer and has c-axis alignment in a direction perpendicular to the surface.

11. The power diode according to claim 10, wherein the crystalline oxide semiconductor layer includes one or both of zinc and indium.

12. The power diode according to claim 7,

wherein the first electrode functions as a gate electrode,

wherein the pair of second electrodes functions as a source electrode and a drain electrode, and

wherein the third electrode functions as a back gate electrode.

26. The power diode according to claim 7, wherein the oxide semiconductor layer comprises a first crystalline oxide semiconductor layer and a second crystalline oxide semiconductor layer.

13. A rectifier comprising a first non-linear element and a second non-linear element, each of the first non-linear element and the second non-linear element comprising:

a first electrode;

a gate insulating layer over the first electrode;

an oxide semiconductor layer over the gate insulating layer;

a pair of second electrodes covering end portions of the oxide semiconductor layer;

an insulating layer over the pair of second electrodes; and

a third electrode over the insulating layer,

wherein the oxide semiconductor layer overlaps with the first electrode,

wherein the third electrode overlaps with the oxide semiconductor layer,

wherein a side surface of the oxide semiconductor layer in a channel width direction faces to the third electrode with the insulating layer interposed therebetween,

wherein a width of the oxide semiconductor layer is larger than a width of the third electrode in a channel length direction,

wherein one of the pair of second electrodes is in contact with the first electrode through an opening portion provided in the gate insulating layer,

wherein an anode of the first non-linear element is connected to a reference potential on a low potential side,

wherein a cathode of the first non-linear element is connected to an input portion and an anode of the second non-linear element, and

wherein a cathode of the second non-linear element is connected to an output portion.

14. The rectifier according to claim 13, further comprising n⁺ layers that are provided between the gate insulating layer and the oxide semiconductor layer, and the pair of second electrodes,

wherein the n⁺ layers cover the end portions of the oxide semiconductor layer.

15. The rectifier according to claim 13, wherein a thickness of the oxide semiconductor layer is greater than or equal to 0.1 μ

m and less than or equal to 50 μ

m.

16. The rectifier according to claim 13,

wherein the oxide semiconductor layer is a crystalline oxide semiconductor layer, and

wherein the crystalline oxide semiconductor layer has an a-b plane parallel to a surface of the crystalline oxide semiconductor layer and has c-axis alignment in a direction perpendicular to the surface.

17. The rectifier according to claim 16, wherein the crystalline oxide semiconductor layer includes one or both of zinc and indium.

18. The rectifier according to claim 13,

wherein the first electrode functions as a gate electrode,

wherein the pair of second electrodes functions as a source electrode and a drain electrode, and

wherein the third electrode functions as a back gate electrode.

27. The rectifier according to claim 13, wherein the oxide semiconductor layer comprises a first crystalline oxide semiconductor layer and a second crystalline oxide semiconductor layer.

19. A semiconductor device comprising:

a first electrode;

a gate insulating layer over the first electrode;

an oxide semiconductor layer over the gate insulating layer;

a pair of second electrodes covering end portions of the oxide semiconductor layer;

an insulating layer over the pair of second electrodes; and

a third electrode over the insulating layer,

wherein the oxide semiconductor layer overlaps with the first electrode,

wherein the third electrode overlaps with the oxide semiconductor layer,

wherein a side surface of the oxide semiconductor layer in a channel width direction faces to the third electrode with the insulating layer interposed therebetween,

wherein a width of the first electrode is larger than a width of the oxide semiconductor layer in a channel length direction, and

wherein a width of the oxide semiconductor layer is larger than a width of the third electrode in the channel length direction.

20. The semiconductor device according to claim 19, further comprising n⁺ layers that are provided between the gate insulating layer and the oxide semiconductor layer, and the pair of second electrodes,

wherein the n⁺ layers cover the end portions of the oxide semiconductor layer.

21. The semiconductor device according to claim 19, wherein a thickness of the oxide semiconductor layer is greater than or equal to 0.1 μ

m and less than or equal to 50 μ

m.

22. The semiconductor device according to claim 19,

wherein the oxide semiconductor layer is a crystalline oxide semiconductor layer, and

wherein the crystalline oxide semiconductor layer has an a-b plane parallel to a surface of the crystalline oxide semiconductor layer and has c-axis alignment in a direction perpendicular to the surface.

23. The semiconductor device according to claim 22, wherein the crystalline oxide semiconductor layer includes one or both of zinc and indium.

24. The semiconductor device according to claim 19,

wherein the first electrode functions as a gate electrode,

wherein the pair of second electrodes functions as a source electrode and a drain electrode, and

wherein the third electrode functions as a back gate electrode.

28. The semiconductor device according to claim 19, wherein the oxide semiconductor layer comprises a first crystalline oxide semiconductor layer and a second crystalline oxide semiconductor layer.