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Semiconductor device, power diode, and rectifier

  • US 8,835,917 B2
  • Filed: 08/30/2011
  • Issued: 09/16/2014
  • Est. Priority Date: 09/13/2010
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a first electrode;

    a gate insulating layer over the first electrode;

    an oxide semiconductor layer over the gate insulating layer;

    a pair of second electrodes covering end portions of the oxide semiconductor layer;

    an insulating layer over the pair of second electrodes; and

    a third electrode over the insulating layer,wherein the oxide semiconductor layer overlaps with the first electrode,wherein the third electrode overlaps with the oxide semiconductor layer,wherein a side surface of the oxide semiconductor layer in a channel width direction faces to the third electrode with the insulating layer interposed therebetween, andwherein a width of the oxide semiconductor layer

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