Semiconductor device and method for manufacturing the same

• US 8,835,920 B2
• Filed: 04/04/2013
• Issued: 09/16/2014
• Est. Priority Date: 07/10/2009
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei, Sakakura, Masayuki
• Primary Examiner(s): Le, Thao P
• Application Number:
  US13/856,590
• Publication Number:
  US 20130221350A1
• Time in Patent Office: 530 Days
• Field of Search: 257/43, 257/E33.019, 257/E33.053, 438/116
• US Class Current: 257/43
• CPC Class Codes: H01L 21/02554 Oxides
• CPC Class Codes: H01L 21/02565 Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1248 with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 33/42 Transparent materials

Abstract

It is an object to manufacture and provide a highly reliable display device including a thin film transistor with a high aperture ratio which has stable electric characteristics. In a manufacturing method of a semiconductor device having a thin film transistor in which a semiconductor layer including a channel formation region is formed using an oxide semiconductor film, a heat treatment for reducing moisture and the like which are impurities and for improving the purity of the oxide semiconductor film (a heat treatment for dehydration or dehydrogenation) is performed. Further, an aperture ratio is improved by forming a gate electrode layer, a source electrode layer, and a drain electrode layer using conductive films having light transmitting properties.

Claims

1. A semiconductor device comprising:

a substrate;

a terminal portion comprising;

a first conductive layer over the substrate;

an insulating layer over the first conductive layer;

a second conductive layer over the insulating layer; and

a third conductive layer over and in contact with the second conductive layer; and

an FPC overlapping the third conductive layer and connected to the third conductive layer,

wherein the second conductive layer and the third conductive layer each have a light transmitting property, and

wherein the first conductive layer is in electrical contact with the second conductive layer and the third conductive layer.

4. The semiconductor device according to claim 1, further comprising:

a transistor over the substrate, the transistor comprising a gate electrode layer, a semiconductor layer, a gate insulating layer interposed between the gate electrode layer and the semiconductor layer, a source electrode layer and a drain electrode layer,

wherein the insulating layer and the gate insulating layer are formed from a same insulating film.

5. The semiconductor device according to claim 1, further comprising:

a capacitor comprising a first electrode layer and a second electrode layer,

wherein the second conductive layer and the first electrode layer are formed from a same first conductive film.

6. The semiconductor device according to claim 1, further comprising:

a transistor over the substrate, the transistor comprising a gate electrode layer, a semiconductor layer, a gate insulating layer interposed between the gate electrode layer and the semiconductor layer, a source electrode layer and a drain electrode layer; and

a capacitor comprising a first electrode layer and a second electrode layer,

wherein the insulating layer and the gate insulating layer are formed from a same insulating film, and

wherein the second conductive layer and the first electrode layer are formed from a same first conductive film.

7. The semiconductor device according to claim 1, further comprising:

a display portion;

a capacitor in the display portion, the capacitor comprising a first electrode layer and a second electrode layer;

a pixel electrode layer,

wherein the second conductive layer and the first electrode layer are formed from a same first conductive film, and

wherein the third conductive layer and the pixel electrode layer are formed from a same second conductive film.

8. The semiconductor device according to claim 1,

wherein the first conductive layer has a light transmitting property.

11. The semiconductor device according to claim 1,

wherein the first conductive layer is in electrical contact with the second conductive layer via the third conductive layer.

14. The semiconductor device according to claim 6,

wherein the first electrode layer and the source electrode layer are formed from a same conductive film.

17. The semiconductor device according to claim 6,

wherein the second electrode layer and the gate electrode layer are formed from a same conductive film.

20. The semiconductor device according to claim 7,

wherein the second electrode layer and the pixel electrode layer are formed from the same second conductive film.

23. The semiconductor device according to claim 6,

wherein the semiconductor layer comprises an oxide semiconductor layer.

26. The semiconductor device according to claim 1,

wherein the second conductive layer and the third conductive layer each comprise indium, zinc and oxygen.

29. A display panel according to claim 7,

wherein the capacitor is a storage capacitor included in a pixel.

32. An electronic appliance comprising the semiconductor device according to claim 1.

2. A display panel comprising:

a substrate;

a display portion over the substrate, the display portion comprising;

a capacitor comprising a first electrode layer and a second electrode layer;

a pixel, the pixel comprising;

a transistor comprising a gate electrode layer, a semiconductor layer, a gate insulating layer interposed between the gate electrode layer and the semiconductor layer, a source electrode layer and a drain electrode layer;

a protective insulating layer over the transistor; and

a pixel electrode layer over the protective insulating layer, and electrically connected to one of the source electrode layer and the drain electrode layer; and

a terminal portion comprising;

a first conductive layer over the substrate;

an insulating layer over the first conductive layer;

a second conductive layer over the insulating layer; and

a third conductive layer over and in contact with the second conductive layer; and

an FPC overlapping the third conductive layer and connected to the third conductive layer,

wherein the second conductive layer and the third conductive layer each have a light transmitting property, and

wherein each of the pixel electrode layer, the first electrode layer and the second electrode layer have a light transmitting property, and

wherein the first conductive layer is in electrical contact with the second conductive layer and the third conductive layer.

9. The display panel according to claim 2,

wherein the first conductive layer has a light transmitting property.

12. The display panel according to claim 2,

wherein the first conductive layer is in electrical contact with the second conductive layer via the third conductive layer.

15. The display panel according to claim 2,

wherein the first electrode layer and the source electrode layer are formed from a same conductive film.

18. The display panel according to claim 2,

wherein the second electrode layer and the gate electrode layer are formed from a same conductive film.

21. The display panel according to claim 2,

wherein the second electrode layer and the pixel electrode layer are formed from a same conductive film.

24. The display panel according to claim 2,

wherein the semiconductor layer comprises an oxide semiconductor layer.

27. The display panel according to claim 2,

wherein the second conductive layer and the third conductive layer each comprise indium, zinc and oxygen.

30. A display panel according to claim 2,

wherein the capacitor is a storage capacitor included in the pixel.

33. An electronic appliance comprising the display panel according to claim 2.

3. A display panel comprising:

a substrate;

a display portion over the substrate, the display portion comprising a pixel, the pixel comprising;

a capacitor comprising a first electrode layer and a second electrode layer;

a transistor comprising a gate electrode layer, a semiconductor layer, a gate insulating layer interposed between the gate electrode layer and the semiconductor layer, a source electrode layer and a drain electrode layer;

a protective insulating layer over the transistor;

a pixel electrode layer over the protective insulating layer, and electrically connected to one of the source electrode layer and the drain electrode layer; and

a driver portion over the substrate, the driver portion being configured to control the display portion;

a terminal portion comprising;

a first conductive layer over the substrate;

an insulating layer over the first conductive layer;

a second conductive layer over the insulating layer; and

a third conductive layer over and in contact with the second conductive layer; and

an FPC overlapping the third conductive layer and connected to the third conductive layer,

wherein the second conductive layer and the third conductive layer each have a light transmitting property,

wherein the second conductive layer and the first electrode layer are formed from a same first conductive film,

wherein the third conductive layer and the pixel electrode layer are formed from a same second conductive film,

wherein the insulating layer and the gate insulating layer are formed from a same insulating film,

wherein each of the pixel electrode layer, the first electrode layer and the second electrode layer have a light transmitting property, and

wherein the first conductive layer is in electrical contact with the second conductive layer and the third conductive layer.

10. The display panel according to claim 3,

wherein the first conductive layer has a light transmitting property.

13. The display panel according to claim 3,

wherein the first conductive layer is in electrical contact with the second conductive layer via the third conductive layer.

16. The display panel according to claim 3,

wherein the first electrode layer and the source electrode layer are formed from a same conductive film.

19. The display panel according to claim 3,

wherein the second electrode layer and the gate electrode layer are formed from a same conductive film.

22. The display panel according to claim 3,

wherein the second electrode layer and the pixel electrode layer are formed from the same second conductive film.

25. The display panel according to claim 3,

wherein the semiconductor layer comprises an oxide semiconductor layer.

28. The display panel according to claim 3,

wherein the second conductive layer and the third conductive layer each comprise indium, zinc and oxygen.

31. A display panel according to claim 3,

wherein the capacitor is a storage capacitor included in the pixel.

34. An electronic appliance comprising the display panel according to claim 3.

35. A display panel comprising:

a substrate;

a pixel over the substrate, the pixel comprising;

a transistor comprising a gate electrode layer, a semiconductor layer, a gate insulating layer interposed between the gate electrode layer and the semiconductor layer, a source electrode layer and a drain electrode layer;

a protective insulating layer over the transistor; and

a pixel electrode layer over the protective insulating layer, and electrically connected to one of the source electrode layer and the drain electrode layer; and

a terminal portion configured to be connected with an FPC, the terminal portion comprising;

a first conductive layer over the substrate;

an insulating layer over the first conductive layer;

a first transparent conductive layer over the insulating layer; and

a second transparent conductive layer over and in contact with the first transparent conductive layer,

wherein the first conductive layer is in electrical contact with the first transparent conductive layer and the second transparent conductive layer, and

wherein the second transparent conductive layer and the pixel electrode layer are formed from a same conductive layer.

36. The display panel according to claim 35, wherein the source electrode layer and the drain electrode layer have a light transmitting property.

37. The display panel according to claim 35, wherein the first transparent conductive layer, the source electrode layer and the drain electrode layer are formed from a same conductive layer.

38. The display panel according to claim 35, wherein the semiconductor layer comprises an oxide semiconductor layer.

39. The display panel according to claim 35, wherein the gate electrode layer has a light transmitting property.

40. The display panel according to claim 35, wherein the display panel is a liquid crystal device.

41. The display panel according to claim 35, further comprising a light emitting layer over the pixel electrode layer.

42. A display panel comprising:

a substrate;

a pixel over the substrate, the pixel comprising;

a transistor comprising a gate electrode layer, a semiconductor layer, a gate insulating layer interposed between the gate electrode layer and the semiconductor layer, a source electrode layer and a drain electrode layer;

a protective insulating layer over the transistor; and

a pixel electrode layer over the protective insulating layer, and electrically connected to one of the source electrode layer and the drain electrode layer; and

a terminal portion configured to be connected with an FPC, the terminal portion comprising;

a first conductive layer over the substrate;

a first insulating layer over the first conductive layer;

a first transparent conductive layer over the first insulating layer;

a second insulating layer over the first transparent conductive layer; and

a second transparent conductive layer over the second insulating layer, wherein the second transparent conductive layer is in contact with the first transparent conductive layer,

wherein the first conductive layer is in electrical contact with the first transparent conductive layer and the second transparent conductive layer, and

wherein the second transparent conductive layer and the pixel electrode layer are formed from a same conductive layer.

43. The display panel according to claim 42, wherein the source electrode layer and the drain electrode layer have a light transmitting property.

44. The display panel according to claim 42, wherein the first transparent conductive layer, the source electrode layer and the drain electrode layer are formed from a same conductive layer.

45. The display panel according to claim 42, wherein the semiconductor layer comprises an oxide semiconductor layer.

46. The display panel according to claim 42, wherein the gate electrode layer has a light transmitting property.

47. The display panel according to claim 42, wherein the display panel is a liquid crystal device.

48. The display panel according to claim 42, further comprising a light emitting layer over the pixel electrode layer.