Optoelectronic component and method for producing an optoelectronic component

• US 8,835,931 B2
• Filed: 03/18/2011
• Issued: 09/16/2014
• Est. Priority Date: 04/16/2010
• Status: Active Grant

• Current Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Original Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Inventors: Wirth, Ralph
• Primary Examiner(s): Luu, Chuong A
• Assistant Examiner(s): FORTICH, RODOLFO D
• Application Number:
  US13/641,650
• Publication Number:
  US 20130032820A1
• Time in Patent Office: 1,278 Days
• Field of Search: 257/76, 257/E33.027, 257/81, 257/E31.108, 257/98, 257/80
• US Class Current: 257/76
• CPC Class Codes: H01L 2224/48463 the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 2933/0091 Scattering means in or on the semiconductor body or semiconductor body package H01L33/22 takes precedence
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/50 Wavelength conversion elements
• CPC Class Codes: H01L 33/58 Optical field-shaping elements
• CPC Class Codes: H01L 33/60 Reflective elements

Abstract

An optoelectronic component for mixing electromagnetic radiation having different wavelengths, more particularly in the far field. A first semiconductor chip for emitting electromagnetic radiation in a first spectral range is provided on a carrier. Furthermore, at least one a second semiconductor chip for emitting electromagnetic radiation in a second spectral range is provided on the carrier. The first and second spectral ranges differ from one another. The first semiconductor chip and the second semiconductor chip are arranged in a single package. The first semiconductor chip is optically isolated from the second semiconductor chip by a barrier. The first semiconductor chip and the second semiconductor chip are arranged centosymmetrically about a common center o(Z) of symmetry.

Claims

1. An optoelectronic component for mixing electromagnetic radiation having different wavelengths, particularly in the far field, comprising:

a carrier;

at least one first semiconductor chip provided on the carrier for emitting electromagnetic radiation in a first spectral range; and

at least one second semiconductor chip provided on the carrier for emitting electromagnetic radiation in a second spectral range,

wherein the optoelectronic component comprises volume emitters and surface emitters,

wherein the first semiconductor chip is an AlGaInP semiconductor chip for emitting electromagnetic radiation in a red region of the spectrum,

wherein the first and the second spectral ranges are different from one another,

wherein the first semiconductor chip and the second semiconductor chip are disposed in a single package,

wherein the first semiconductor chip is optically isolated from the second semiconductor chip by a barrier, and

wherein the first semiconductor chip and the second semiconductor chip are in each case disposed centrosymmetrically about a common center of symmetry.

2. The optoelectronic component as claimed in claim 1, wherein the at least one first semiconductor chip is disposed in an inner region and the at least one second semiconductor chip in an outer region on the carrier.

3. The optoelectronic component as claimed in claim 1, wherein an additional barrier is disposed around the second semiconductor chips.

4. The optoelectronic component as claimed in claim 3, wherein the barrier and/or the additional barrier is/are ring-shaped.

5. The optoelectronic component as claimed in claim 1, wherein the second semiconductor chip is an InGaN semiconductor chip for emitting electromagnetic radiation in a blue region of the spectrum.

6. The optoelectronic component as claimed in claim 5, wherein some of the electromagnetic radiation emitted by the InGaN semiconductor chip is converted by a conversion means, in particular into a yellow-green spectral range.

7. The optoelectronic component as claimed in claim 1, wherein the AlGaInP semiconductor chips are encapsulated in a first encapsulating material, in particular silicone or epoxy resin.

8. The optoelectronic component as claimed in claim 5, wherein the InGaN semiconductor chips are encapsulated in a second encapsulating in a form of a planar volume encapsulation, wherein the second encapsulating material has a conversion means.

9. The optoelectronic component as claimed in claim 1, wherein a hemispherical coupling-out lens, whose geometry satisfies a Weierstrass condition, spans the first semiconductor chips.

10. The optoelectronic component as claimed in claim 5, wherein the InGaN semiconductor chips are implemented as the volume emitters and/or as the surface emitters.

11. The optoelectronic component as claimed in claim 10, wherein the surface emitters are at least partially disposed in a highly reflective material, in particular a TiO2, ZrO2, Al2O3 or ZnO filled silicone.

12. The optoelectronic component as claimed in claim 1, wherein the barrier and/or the additional barrier is/are highly reflective, having a reflectivity greater than 90%, preferably greater than 95%.

14. The optoelectronic component as claimed in claim 8, wherein the second encapsulating material is silicone.

15. The optoelectronic component as claimed in claim 10, wherein the volume emitters are sapphire chips, and/or as the surface emitters are thin film chips.

13. An optoelectronic component for mixing electromagnetic radiation having different wavelengths, particularly in the far field, comprising:

a carrier;

at least one first semiconductor chip provided on the carrier for emitting electromagnetic radiation in a first spectral range, wherein the first semiconductor chip is an AlGaInP semiconductor chip for emitting electromagnetic radiation in a red region of the spectrum; and

at least one second semiconductor chip provided on the carrier for emitting electromagnetic radiation in a second spectral range, wherein the second semiconductor chip is an InGaN semiconductor chip for emitting electromagnetic radiation in a blue region of the spectrum and wherein the optoelectronic component comprises volume emitters and surface emitters;

wherein the first semiconductor chip and the second semiconductor chip are disposed in a single package,

wherein the first semiconductor chip is optically isolated from the second semiconductor chip by a barrier, and

wherein the first semiconductor chip and the second semiconductor chip are in each case disposed about a common center of gravity.

16. An optoelectronic component for mixing electromagnetic radiation having different wavelengths, particularly in the far field, comprising:

a carrier;

at least one first semiconductor chip provided on the carrier for emitting electromagnetic radiation in a first spectral range; and

at least one second semiconductor chip provided on the carrier for emitting electromagnetic radiation in a second spectral range,

wherein the optoelectronic component comprises volume emitters and surface emitters,

wherein the second semiconductor chip is an InGaN semiconductor chip for emitting electromagnetic radiation in a blue region of the spectrum,

wherein the first and the second spectral ranges are different from one another,

wherein the first semiconductor chip and the second semiconductor chip are disposed in a single package,

wherein the first semiconductor chip is optical/y isolated from the second semiconductor chip by a barrier, and

wherein the first semiconductor chip and the second semiconductor chip are in each case disposed centrosymmetrically about a common center of symmetry.