Nitride semiconductor light-emitting element and method of manufacturing the same

• US 8,835,938 B2
• Filed: 08/28/2007
• Issued: 09/16/2014
• Est. Priority Date: 09/08/2006
• Status: Active Grant

• Current Assignee: Sharp Fukuyama Laser Co., Ltd. (Hon Hai Precision Industry Co., Ltd.)
• Original Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Inventors: Hata, Toshio
• Primary Examiner(s): Nguyen, Cuong Q
• Assistant Examiner(s): YUSHINA, GALINA G
• Application Number:
  US11/892,935
• Publication Number:
  US 20080061315A1
• Time in Patent Office: 2,576 Days
• Field of Search: 257/79, 257/95, 257/E33.001, 257/E33.015, 257/E31.099, 257/E25.01, 257/90, 257/91, 257/13, 257/103, 257/12, 257/14, 257/15, 257/81, 257/82, 257/88, 257/94, 257/96, 257/99, 257/183, 257/189, 257/201, 257/745, 257/E33.002, 257/E33.008, 257/E33.023, 257/E33.025, 257/E33.026, 257/E33.027, 257/E33.028, 257/E33.03, 257/E33.031, 257/E33.032, 257/E33.033, 257/E33.034, 257/E33.049, 257/E33.073, 438/663, 438/665, 438/666, 438/689, 438/690
• US Class Current: 257/79
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/42 Transparent materials
• CPC Class Codes: H01S 5/0213 Sapphire, quartz or diamond based substrates
• CPC Class Codes: H01S 5/0217 Removal of the substrate
• CPC Class Codes: H01S 5/32341 blue laser based on GaN or GaP

Abstract

There is provided a nitride semiconductor light-emitting element including a transparent conductor, a first conductivity-type nitride semiconductor layer, a light-emitting layer, and a second conductivity-type nitride semiconductor layer, the first conductivity-type nitride semiconductor layer, the light-emitting layer, and the second conductivity-type nitride semiconductor layer being successively stacked on the transparent conductor. There is also provided a nitride semiconductor light-emitting element including a first transparent conductor, a metal layer, a second transparent conductor, a first conductivity-type nitride semiconductor layer, a light-emitting layer, and a second conductivity-type nitride semiconductor layer, the metal layer, the second transparent conductor, the first conductivity-type nitride semiconductor layer, the light-emitting layer, and the second conductivity-type nitride semiconductor layer being successively stacked on the first transparent conductor. There is also provided a method of manufacturing each of these nitride semiconductor light-emitting elements.

Claims

1. A nitride semiconductor light-emitting element comprising:

a first transparent conductor;

a metal layer having a uniform width;

a second transparent conductor;

a first conductivity-type nitride semiconductor layer;

a light-emitting layer; and

a second conductivity-type nitride semiconductor layer, wherein;

the metal layer, the second transparent conductor, the first conductivity-type nitride semiconductor layer, the light-emitting layer, and the second conductivity-type nitride semiconductor layer are successively stacked on said first transparent conductor,

said metal layer is in contact with both a first surface of said first transparent conductor and a second surface of said second transparent conductor,

said first conductivity-type nitride semiconductor layer is in contact with a first surface of said second transparent conductor opposite the second surface of said second transparent conductor,

said metal layer is a single layer, and

said first transparent conductor has an exposed second surface opposite the first surface of said first transparent conductor.

2. The nitride semiconductor light-emitting element according to claim 1, wherein a top surface of said second conductivity-type nitride semiconductor layer has irregularities.

3. The nitride semiconductor light-emitting element according to claim 1, wherein a thickness of said second transparent conductor is smaller than a thickness of said first transparent conductor.

4. The nitride semiconductor light-emitting element according to claim 1, wherein a surface of the nitride semiconductor light-emitting element on a side having said first transparent conductor is made to serve as a mounting surface.

5. The nitride semiconductor light-emitting element according to claim 1, wherein said first conductivity-type nitride semiconductor layer contains at least magnesium, and said second conductivity-type nitride semiconductor layer contains at least silicon.

6. The nitride semiconductor light-emitting element according to claim 1, wherein said first conductivity-type nitride semiconductor layer, said light-emitting layer, and said second conductivity-type nitride semiconductor layer are located on said second transparent conductor inside a region surrounded by an exposed surface obtained by exposing a part of the first surface of said second transparent conductor.

7. The nitride semiconductor light-emitting element according to claim 1, wherein a part of the first surface of said second transparent conductor is exposed so as to surround the periphery of said first conductivity-type nitride semiconductor layer, said light-emitting layer, and said second conductivity-type nitride semiconductor layer.

8. The nitride semiconductor light-emitting element according to claim 1, wherein said first transparent conductor and said second transparent conductor contain indium tin oxide, zinc oxide, tin oxide, cadmium oxide, cadmium indium oxide, cadmium tin oxide, zinc tin oxide, indium zinc oxide, magnesium indium oxide, calcium gallium oxide, titanium nitride, zirconium nitride, hafnium nitride, or lanthanum boride.

9. The nitride semiconductor light-emitting element according to claim 1, wherein said metal layer is one of a metal adhesive layer, a metal barrier layer, and a metal reflective layer.

10. The nitride semiconductor light-emitting element according to claim 9, wherein said metal adhesive layer contains chromium or a chromium alloy.

11. The nitride semiconductor light-emitting element according to claim 9, wherein said metal barrier layer contains nickel, titanium, a nickel-titanium alloy, or platinum.

12. The nitride semiconductor light-emitting element according to claim 9, wherein said metal reflective layer contains at least one selected from the group consisting of silver, platinum, aluminum, rhodium, a silver-neodymium alloy, a silver-neodymium-copper alloy, a silver-palladium alloy, a silver-palladium-copper alloy, a silver-bismuth alloy, and a silver-neodymium-gold alloy.

13. A method of manufacturing the nitride semiconductor light-emitting element, comprising the steps of:

stacking a second conductivity-type nitride semiconductor layer, a light-emitting layer, and a first conductivity-type nitride semiconductor layer containing magnesium on a substrate in this order;

forming a second transparent conductor on said first conductivity-type nitride semiconductor layer, said first conductivity-type nitride semiconductor layer being in contact with a first surface of said second transparent conductor opposite a second surface of said second transparent conductor;

heating said second transparent conductor to a temperature of not less than 500°

C. for not less than 10 minutes;

forming a metal layer on said second transparent conductor after said heating, said metal layer having a uniform width; and

forming a first transparent conductor on said metal layer, said first transparent conductor having an exposed second surface opposite a first surface of said first transparent conductor, said metal layer being in contact with both the first surface of said first transparent conductor and the second surface of said transparent conductor, said metal layer being a single layer.

14. The method of manufacturing the nitride semiconductor light-emitting element according to claim 13, wherein at least one of said first transparent conductor and said second transparent conductor contains indium tin oxide, zinc oxide, tin oxide, cadmium oxide, cadmium indium oxide, cadmium tin oxide, zinc tin oxide, indium zinc oxide, magnesium indium oxide, calcium gallium oxide, titanium nitride, zirconium nitride, hafnium nitride, or lanthanum boride.

15. The method of manufacturing the nitride semiconductor light-emitting element according to claim 13, wherein said substrate contains at least one selected from the group consisting of sapphire, gallium arsenide, gallium phosphide, silicon, and germanium.

16. The method of manufacturing the nitride semiconductor light-emitting element according to claim 13, comprising the step of removing said substrate.

17. The method of manufacturing the nitride semiconductor light-emitting element according to claim 13, comprising the step of exposing a part of the first surface of said second transparent conductor by removing portions of said second conductivity-type nitride semiconductor layer, said light-emitting layer, and said first conductivity-type nitride semiconductor layer.