Semiconductor structures and methods with high mobility and high energy bandgap materials
First Claim
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1. A structure comprising:
- a substrate comprising a first isolation region and a second isolation region, each of first isolation region and the second isolation region extending below a first surface of the substrate between the first isolation region and the second isolation region;
a high energy bandgap material over the first surface of the substrate, the high energy bandgap material being disposed between the first isolation region and the second isolation region, an upper surface of the high energy bandgap material comprising a plurality of facets; and
a high carrier mobility material over the high energy bandgap material, the high carrier mobility material extending higher than respective top surfaces of the first isolation region and the second isolation region to form a fin.
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Abstract
An embodiment is a structure comprising a substrate, a high energy bandgap material, and a high carrier mobility material. The substrate comprises a first isolation region and a second isolation region. Each of first and second isolation regions extends below a first surface of the substrate between the first and second isolation regions. The high energy bandgap material is over the first surface of the substrate and is disposed between the first and second isolation regions. The high carrier mobility material is over the high energy bandgap material. The high carrier mobility material extends higher than respective top surfaces of the first and second isolation regions to form a fin.
399 Citations
20 Claims
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1. A structure comprising:
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a substrate comprising a first isolation region and a second isolation region, each of first isolation region and the second isolation region extending below a first surface of the substrate between the first isolation region and the second isolation region; a high energy bandgap material over the first surface of the substrate, the high energy bandgap material being disposed between the first isolation region and the second isolation region, an upper surface of the high energy bandgap material comprising a plurality of facets; and a high carrier mobility material over the high energy bandgap material, the high carrier mobility material extending higher than respective top surfaces of the first isolation region and the second isolation region to form a fin. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A structure comprising:
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a semiconductor substrate; a first semiconductor material on the substrate, the first semiconductor material having an energy bandgap greater than 1 eV, the first semiconductor material having a surface distal from the semiconductor substrate comprising a plurality of facets; a fin comprising a second semiconductor material on the first semiconductor material, the first semiconductor material being disposed between the semiconductor substrate and the second semiconductor material, the second semiconductor material having an electron mobility greater than 8,500 cm2/V-s or a hole mobility greater than 1,500 cm2/V-s; and a gate structure over the fin. - View Dependent Claims (12, 13, 14, 15)
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16. A structure comprising:
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a substrate comprising a first isolation region and a second isolation region, the first isolation region and the second isolation region extending into the substrate below a surface of the substrate; a high bandgap energy crystalline material over the surface of the substrate and between the first isolation region and the second isolation region, the high bandgap energy crystalline material comprising an upper surface having a plurality of facets, the high bandgap energy crystalline material having a bandgap energy greater than 1 eV; a fin comprising a semiconductor crystalline material over the high bandgap energy crystalline material, the semiconductor crystalline material having an electron mobility greater than 8,500 cm2/V-s or a hole mobility greater than 1,500 cm2/V-s; and a gate structure over the fin. - View Dependent Claims (17, 18, 19, 20)
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Specification