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Semiconductor structure and process thereof

  • US 8,836,049 B2
  • Filed: 06/13/2012
  • Issued: 09/16/2014
  • Est. Priority Date: 06/13/2012
  • Status: Active Grant
First Claim
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1. A semiconductor structure, comprising:

  • a work function metal layer located on a substrate, the work function metal layer comprising titanium aluminide, regardless of whether the semiconductor structure is a PMOS transistor or a NMOS transistor;

    a work function metal oxide layer located on the work function metal layer;

    a main electrode located on the work function metal oxide layer; and

    a barrier-wetting layer located between the work function metal oxide layer and the main electrode, so that the work function metal layer, the work function metal oxide layer, the barrier-wetting layer and the main electrode constitute a metal gate.

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