Semiconductor structure and process thereof
First Claim
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1. A semiconductor structure, comprising:
- a work function metal layer located on a substrate, the work function metal layer comprising titanium aluminide, regardless of whether the semiconductor structure is a PMOS transistor or a NMOS transistor;
a work function metal oxide layer located on the work function metal layer;
a main electrode located on the work function metal oxide layer; and
a barrier-wetting layer located between the work function metal oxide layer and the main electrode, so that the work function metal layer, the work function metal oxide layer, the barrier-wetting layer and the main electrode constitute a metal gate.
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Abstract
A semiconductor structure includes a work function metal layer, a (work function) metal oxide layer and a main electrode. The work function metal layer is located on a substrate. The (work function) metal oxide layer is located on the work function metal layer. The main electrode is located on the (work function) metal oxide layer. Moreover a semiconductor process forming said semiconductor structure is also provided.
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Citations
12 Claims
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1. A semiconductor structure, comprising:
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a work function metal layer located on a substrate, the work function metal layer comprising titanium aluminide, regardless of whether the semiconductor structure is a PMOS transistor or a NMOS transistor; a work function metal oxide layer located on the work function metal layer; a main electrode located on the work function metal oxide layer; and a barrier-wetting layer located between the work function metal oxide layer and the main electrode, so that the work function metal layer, the work function metal oxide layer, the barrier-wetting layer and the main electrode constitute a metal gate. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A semiconductor structure, comprising:
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a work function metal layer located on a substrate, the work function metal layer comprising titanium aluminide, regardless of whether the semiconductor structure is a PMOS transistor or a NMOS transistor; a metal oxide layer located on the work function metal layer; a main electrode located on the metal oxide layer; and a barrier-wetting layer located between the metal oxide layer and the main electrode, so that the work function metal layer, the metal oxide layer, the barrier-wetting layer and the main electrode constitute a metal gate. - View Dependent Claims (8, 9, 10, 11, 12)
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Specification