Semiconductor device and structure
First Claim
Patent Images
1. An Integrated Circuit device comprising:
- a first layer of first transistors;
a first metal layer overlaying said first transistors and providing at least one connection to said first transistors;
a second metal layer overlaying said first metal layer; and
a second layer of second transistors overlaying said second metal layer,wherein said second metal layer is connected to provide power to at least one of said second transistors.
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Abstract
An Integrated Circuit device including: a first layer of first transistors; a first metal layer overlaying the first transistors and providing at least one connection to the first transistors; a second metal layer overlaying the first metal layer; and a second layer of second transistors overlaying the second metal layer, where the second metal layer is connected to provide power to at least one of the second transistors.
620 Citations
25 Claims
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1. An Integrated Circuit device comprising:
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a first layer of first transistors; a first metal layer overlaying said first transistors and providing at least one connection to said first transistors; a second metal layer overlaying said first metal layer; and a second layer of second transistors overlaying said second metal layer, wherein said second metal layer is connected to provide power to at least one of said second transistors. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. An Integrated Circuit device comprising:
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a first layer of first transistors; a first metal layer overlaying said first transistors and providing at least one connection to said first transistors; a second metal layer overlaying said first metal layer; a second layer of second transistors overlaying said second metal layer; and a third metal layer overlying said second transistors, wherein at least one of said second transistors is provided with a back-bias. - View Dependent Claims (9, 10, 11, 12, 13)
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14. An Integrated Circuit device comprising:
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a first layer of first transistors; a first metal layer overlaying said first transistors and providing at least one connection to said first transistors; a second metal layer overlaying said first metal layer; a second layer of second transistors overlaying said second metal layer; and a third metal layer overlying said second transistors, wherein at least one of said second transistors is one of; (i) a replacement-gate transistor; (ii) a Finfet transistor;
or(iii) a double gate horizontally oriented transistor. - View Dependent Claims (15, 16, 17, 18, 19)
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20. An Integrated Circuit device comprising:
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a first layer of first transistors; a first metal layer overlaying said first transistors and providing at least one connection to said first transistors; a second metal layer overlaying said first metal layer; a second layer of second transistors overlaying said second metal layer; and a third metal layer overlying said second transistors, wherein at least one of said second transistors is one of; (i) a replacement-gate transistor;
or(ii) a Finfet transistor. - View Dependent Claims (21, 22, 23, 24, 25)
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Specification