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Cost-effective TSV formation

  • US 8,836,085 B2
  • Filed: 09/04/2013
  • Issued: 09/16/2014
  • Est. Priority Date: 09/30/2010
  • Status: Active Grant
First Claim
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1. A device comprising:

  • a substrate comprising a first surface, and a second surface opposite the first surface;

    a through-substrate via (TSV) extending from the first surface to the second surface of the substrate, wherein the TSV is formed of a continuous metallic material;

    a dielectric liner between the TSV and the substrate, wherein the dielectric liner extends over the first surface of the substrate;

    a dielectric layer over the substrate, wherein the dielectric layer is on a top surface of the dielectric liner; and

    a first metal pad in the dielectric layer and physically contacting the TSV, wherein the first metal pad is formed of the continuous metallic material, wherein a top surface of the first metal pad is substantially coplanar with a top surface of the dielectric layer.

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