Optical device structure using GaN substrates and growth structures for laser applications
First Claim
Patent Images
1. An optical device comprising:
- a gallium and nitrogen containing substrate member having a semipolar crystalline surface region, the gallium and nitrogen containing substrate member having a thickness of less than 500 microns, the gallium and nitrogen containing substrate member characterized by a dislocation density of less than 107 cm−
2;
the semipolar crystalline surface region having a root mean square surface roughness of 10 nm or less over a 5 micron by 5 micron analysis area;
an offcut characterizing the semipolar crystalline surface region;
a gallium and nitrogen containing n-type cladding layer overlying the semipolar crystalline surface region, the gallium and nitrogen containing n-type cladding layer having a thickness from 300 nm to 6000 nm with an n-type doping level of 1E17 cm−
3 to 3E18 cm−
3;
an n-side separate confining heterostructure (SCH) waveguide layer overlying the gallium and nitrogen containing n-type cladding layer, the n-side SCH waveguide layer comprised of at least gallium, indium, and nitrogen with molar fraction of InN of between 1% and 8% and having a thickness from 20 nm to 150 nm;
a multiple quantum well active region overlying the n-side SCH waveguide layer, the multiple quantum well active region comprising two to five InGaN quantum wells having a thickness from 2.0 nm to 4.5 nm and being separated by gallium and nitrogen containing barrier layers having a thickness from 3.5 nm to 20 nm;
a p-side guide layer overlying the multiple quantum well active region, the p-side guide layer comprised of GaN or InGaN and having a thickness from 10 nm to 120 nm;
a p-type gallium and nitrogen containing cladding layer overlying the multiple quantum well active region, the p-type gallium and nitrogen containing cladding layer having a thickness from 300 nm to 1000 nm with a p-type doping level of 1E17 cm−
3 to 5E19 cm−
3;
a p++ gallium and nitrogen containing contact layer overlying the p-type gallium and nitrogen containing cladding layer, the p++ gallium and nitrogen containing contact layer having a thickness from 10 nm to 120 nm with a p-type doping level of 1E19 cm−
3 to 1E22 cm−
3;
a waveguide member, the waveguide member being aligned substantially in a projection of the c-direction, the waveguide region comprising a first end and a second end;
a first facet formed on the first end; and
a second facet formed on the second end.
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Abstract
Optical devices having a structured active region configured for selected wavelengths of light emissions are disclosed.
274 Citations
18 Claims
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1. An optical device comprising:
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a gallium and nitrogen containing substrate member having a semipolar crystalline surface region, the gallium and nitrogen containing substrate member having a thickness of less than 500 microns, the gallium and nitrogen containing substrate member characterized by a dislocation density of less than 107 cm−
2;the semipolar crystalline surface region having a root mean square surface roughness of 10 nm or less over a 5 micron by 5 micron analysis area; an offcut characterizing the semipolar crystalline surface region; a gallium and nitrogen containing n-type cladding layer overlying the semipolar crystalline surface region, the gallium and nitrogen containing n-type cladding layer having a thickness from 300 nm to 6000 nm with an n-type doping level of 1E17 cm−
3 to 3E18 cm−
3;an n-side separate confining heterostructure (SCH) waveguide layer overlying the gallium and nitrogen containing n-type cladding layer, the n-side SCH waveguide layer comprised of at least gallium, indium, and nitrogen with molar fraction of InN of between 1% and 8% and having a thickness from 20 nm to 150 nm; a multiple quantum well active region overlying the n-side SCH waveguide layer, the multiple quantum well active region comprising two to five InGaN quantum wells having a thickness from 2.0 nm to 4.5 nm and being separated by gallium and nitrogen containing barrier layers having a thickness from 3.5 nm to 20 nm; a p-side guide layer overlying the multiple quantum well active region, the p-side guide layer comprised of GaN or InGaN and having a thickness from 10 nm to 120 nm; a p-type gallium and nitrogen containing cladding layer overlying the multiple quantum well active region, the p-type gallium and nitrogen containing cladding layer having a thickness from 300 nm to 1000 nm with a p-type doping level of 1E17 cm−
3 to 5E19 cm−
3;a p++ gallium and nitrogen containing contact layer overlying the p-type gallium and nitrogen containing cladding layer, the p++ gallium and nitrogen containing contact layer having a thickness from 10 nm to 120 nm with a p-type doping level of 1E19 cm−
3 to 1E22 cm−
3;a waveguide member, the waveguide member being aligned substantially in a projection of the c-direction, the waveguide region comprising a first end and a second end; a first facet formed on the first end; and a second facet formed on the second end. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. An optical device comprising:
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a gallium and nitrogen containing substrate member having a semipolar crystalline surface region, the gallium and nitrogen containing substrate member having a thickness of less than 450 microns, the gallium and nitrogen containing substrate member characterized by a dislocation density of less than 107 cm−
2;the semipolar crystalline surface region having a root mean square surface roughness of 10 nm or less over a 5 micron by 5 micron analysis area; an offcut characterizing the semipolar crystalline surface region; an n-type cladding layer comprising at least an aluminum bearing species, a gallium bearing species, and a nitrogen bearing species overlying the semipolar crystalline surface region, the n-type cladding layer having a thickness from 100 nm to 5000 nm with an n-type doping level of 1E17 cm−
3 to 6E18 cm−
3;a first gallium and nitrogen containing epitaxial material comprising a first portion including a first indium concentration, a second portion including a second indium concentration, and a third portion including a third indium concentration overlying the n-type cladding layer; an n-side separate confining heterostructure (SCH) waveguide layer overlying the n-type cladding layer, the n-side SCH waveguide layer comprising InGaN with a molar fraction of InN of between 1% and 8% and having a thickness from 30 nm to 150 nm; a multiple quantum well active region overlying the n-side SCH waveguide layer, the multiple quantum well active region comprising two to five InGaN quantum wells having a thickness from 2.0 nm to 4.5 nm and being separated by gallium and nitrogen containing barrier layers having a thickness from 5.5 nm to 18 nm; a p-side guide layer overlying the multiple quantum well active region, the p-side guide layer comprised of GaN or InGaN and having a thickness from 20 nm to 100 nm; a p-type cladding layer comprising at least an aluminum bearing species, a gallium bearing species, and a nitrogen bearing species overlying the p-side guide layer, the p-type cladding layer having a thickness from 250 nm to 1000 nm with a p-type doping level of 1E17 cm−
3 to 5E19 cm−
3;a plurality of hydrogen species, the plurality of hydrogen species spatially disposed within the p-type cladding layer; a p++ gallium and nitrogen containing contact layer overlying the p-type cladding layer, the p++ gallium and nitrogen containing contact layer having a thickness from 10 nm to 100 nm with a p-type doping level of 1E19 cm−
3 to 1E22 cm−
3;a waveguide member, the waveguide member being aligned substantially in a projection of the c-direction, the waveguide member comprising a first end and a second end; a first facet formed on the first end; a first semipolar characteristic configured on the first facet; a second facet formed on the second end; a second semipolar characteristic configured on the second facet; a first edge region formed on a first side of the waveguide member; a first etched surface formed on the first edge region; a second edge region formed on a second side of the waveguide member; and a second etched surface formed on the second edge region; whereupon the waveguide member is provided between the first facet and the second facet, the waveguide member having a length of greater than 300 microns and configured to emit substantially polarized electromagnetic radiation such that a polarization is substantially orthogonal to a waveguide cavity direction and the substantially polarized electromagnetic radiation having a wavelength of 500 nm and greater and a spontaneous emission spectral full width at half maximum of less than 50 nm in a light emitting diode mode of operation. - View Dependent Claims (12, 13, 14, 15, 16, 17)
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18. An optical device comprising:
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a gallium and nitrogen containing substrate member having a semipolar crystalline surface region, the gallium and nitrogen containing substrate member having a thickness of less than 500 microns, the gallium and nitrogen containing substrate member characterized by a dislocation density of less than 107 cm−
2;the semipolar crystalline surface region having a root mean square surface roughness of 10 nm or less over a 5 micron by 5 micron analysis area; an offcut characterizing the semipolar crystalline surface region; an n-type cladding layer comprising a first quaternary alloy, the first quaternary alloy comprising an aluminum bearing species, an indium bearing species, a gallium bearing species, and a nitrogen bearing species overlying the semipolar crystalline surface region, the n-type cladding layer having a thickness from 100 nm to 5000 nm with an n-type doping level of 1E17 cm−
3 to 6E18 cm−
3;a surface reconstruction region overlying the semipolar crystalline surface region and the n-type cladding layer and at an interface within a vicinity of the semipolar crystalline surface region, the surface reconstruction region having an oxygen bearing concentration of greater than 1E17 cm−
3;a first gallium and nitrogen containing material comprising a first portion including a first indium concentration, a second portion including a second indium concentration, and a third portion including a third indium concentration overlying the n-type cladding layer; an n-side separate confining heterostructure (SCH) waveguide layer overlying the n-type cladding layer, the n-side SCH waveguide layer comprised of InGaN with molar fraction of InN of between 1% and 8% and having a thickness from 30 nm to 150 nm; a multiple quantum well active region overlying the n-side SCH waveguide layer, the multiple quantum well active region comprising two to five InGaN quantum wells having a thickness from 2.0 nm to 4.5 nm and being separated by gallium and nitrogen containing barrier layers having a thickness from 5 nm to 20 nm; a p-side guide layer overlying the multiple quantum well active region, the p-side guide layer comprising GaN or InGaN and having a thickness from 20 nm to 100 nm; a second gallium and nitrogen containing material overlying the p-side guide layer; a p-type cladding layer comprising a second quaternary alloy overlying the second gallium and nitrogen containing material, the p-type cladding layer having a thickness from 250 nm to 1000 nm and comprising a p-type doping species including magnesium at a concentration of 1E17 cm−
3 to 4E19 cm−
3;a plurality of hydrogen species, the plurality of hydrogen species spatially disposed within the p-type cladding layer; a p++ gallium and nitrogen containing contact layer overlying the p-type cladding layer, the p++ gallium and nitrogen containing contact layer having a thickness from 10 nm to 140 nm and comprising a p-type doping species including magnesium at a concentration of 1E19 cm−
3 to 1E22 cm−
3;a waveguide member, the waveguide member being aligned substantially in a projection of the c-direction, the waveguide member comprising a first end and a second end; a first facet formed on the first end; a first semipolar characteristic configured on the first facet; a second facet formed on the second end; a second semipolar characteristic configured on the second facet; a first edge region formed on a first side of the waveguide member; a first etched surface formed on the first edge region; a second edge region formed on a second side of the waveguide member; and a second etched surface formed on the second edge region; whereupon the waveguide member is provided between the first facet and the second facet, the waveguide member having a length of greater than 300 microns and configured to emit substantially polarized electromagnetic radiation such that a polarization is substantially orthogonal to a waveguide cavity direction and the substantially polarized electromagnetic radiation having a wavelength of 500 nm and greater and a spontaneous emission spectral full width at half maximum of less than 50 nm in a light emitting diode mode of operation or a spectral line-width of a laser output of greater than 0.4 nm.
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Specification
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Current AssigneeKyocera SLD Laser Incorporated (Kyocera Corporation)
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Original AssigneeSoraa Laser Diode, Inc. (Kyocera Corporation)
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InventorsRaring, James W.
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Primary Examiner(s)Nguyen, Tuan N
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Application NumberUS13/549,335Publication NumberTime in Patent Office795 DaysField of SearchNoneUS Class Current372/43.01CPC Class CodesB82Y 20/00 Nanooptics, e.g. quantum op...H01S 5/0014 Measuring characteristics o...H01S 5/0202 CleavingH01S 5/028 Coatings ; Treatment of the...H01S 5/0287 Facet reflectivityH01S 5/1085 Oblique facetsH01S 5/2009 by using electron barrier l...H01S 5/2031 characterized by special wa...H01S 5/2201 in a specific crystallograp...H01S 5/3202 grown on specifically orien...H01S 5/32025 non-polar orientationH01S 5/320275 semi-polar orientationH01S 5/3213 asymmetric clading layersH01S 5/34333 with a well layer based on ...H01S 5/4025 Array arrangements, e.g. co...
