Self-aligned double patterning via enclosure design
First Claim
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1. A method for computing via enclosure rules, comprising:
- identifying, by at least one computing device, line termination modes in a self-aligned double patterning line pattern comprising a plurality of lines and vias;
assigning, by the at least one computing device, a first via enclosure rule in response to identifying a line termination mode of inner vertex block mask, wherein the inner vertex block mask comprises at least one vertex that has an outer angle that is less than 180 degrees; and
assigning, by the at least one computing device, a second via enclosure rule in response to identifying a line termination mode of outer vertex block mask, wherein the outer vertex block mask consists of vertices that have an outer angle that is greater than 180 degrees.
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Abstract
A design methodology for determining a via enclosure rule for use with a self-aligned double pattern (SADP) technique is disclosed. The shape of the block mask serves as a criterion for choosing a via enclosure rule. Different block mask shapes within an integrated circuit design may utilize different rules and provide different margins for via enclosure. A tight via enclosure design rule reduces the margin of a line beyond the via where possible, while a loose via enclosure design rule increases the margin of a line beyond the via where it is beneficial to do so.
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Citations
20 Claims
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1. A method for computing via enclosure rules, comprising:
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identifying, by at least one computing device, line termination modes in a self-aligned double patterning line pattern comprising a plurality of lines and vias; assigning, by the at least one computing device, a first via enclosure rule in response to identifying a line termination mode of inner vertex block mask, wherein the inner vertex block mask comprises at least one vertex that has an outer angle that is less than 180 degrees; and assigning, by the at least one computing device, a second via enclosure rule in response to identifying a line termination mode of outer vertex block mask, wherein the outer vertex block mask consists of vertices that have an outer angle that is greater than 180 degrees. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method for computing via enclosure rules, comprising:
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identifying, by at least one computing device, line termination modes in a self-aligned double patterning line pattern comprising a plurality of lines and vias; assigning, by the at least one computing device, a first via enclosure rule in response to identifying a set of aligned adjacent lines; and assigning, by the at least one computing device, a second via enclosure rule in response to identifying a set of misaligned adjacent lines. - View Dependent Claims (13, 14, 15)
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16. A non-transitory computer-readable medium comprising instructions which, when executed by a processor, perform the steps of:
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identifying line termination modes in a self-aligned double patterning line pattern comprising a plurality of lines and vias; assigning a first via enclosure rule in response to identifying a line termination mode of inner vertex block mask, wherein the inner vertex block mask comprises at least one vertex that has an outer angle that is less than 180 degrees; and assigning a second via enclosure rule in response to identifying a line termination mode of outer vertex block mask, wherein the outer vertex block mask consists of vertices that have an outer angle that is greater than 180 degrees. - View Dependent Claims (17, 18, 19, 20)
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Specification