Dielectric reliability assessment for advanced semiconductors
First Claim
1. A computer implemented method for performing a dielectric reliability assessment for an advanced semiconductor, the method comprising:
- receiving data associated with a test of a macro of the advanced semiconductor to a point of dielectric breakdown;
scaling, by a processor, the data for the macro down to a reference area;
extracting a parameter for a Weibull distribution from the scaled down data for the reference area;
deriving a cluster factor (α
) from the scaled down data for the reference area; and
projecting a failure rate for a larger area of the advanced semiconductor based on the extracted parameter, the cluster factor and the recorded data associated with the dielectric breakdown of the macro;
wherein the projection is made using according to;
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Abstract
Embodiments relate to methods, computer systems and computer program products for performing a dielectric reliability assessment for an advanced semiconductor. Embodiments include receiving data associated with a test of a macro of the advanced semiconductor to a point of dielectric breakdown. Embodiments also include scaling the data for the macro down to a reference area and extracting a parameter for a Weibull distribution from the scaled down data for the reference area. Embodiments further include deriving a cluster factor (α) from the scaled down data for the reference area and projecting a failure rate for a larger area of the advanced semiconductor based on the extracted parameter, the cluster factor and the recorded data associated with the dielectric breakdown of the macro.
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Citations
15 Claims
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1. A computer implemented method for performing a dielectric reliability assessment for an advanced semiconductor, the method comprising:
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receiving data associated with a test of a macro of the advanced semiconductor to a point of dielectric breakdown; scaling, by a processor, the data for the macro down to a reference area; extracting a parameter for a Weibull distribution from the scaled down data for the reference area; deriving a cluster factor (α
) from the scaled down data for the reference area; andprojecting a failure rate for a larger area of the advanced semiconductor based on the extracted parameter, the cluster factor and the recorded data associated with the dielectric breakdown of the macro;
wherein the projection is made using according to; - View Dependent Claims (2, 3, 4, 5)
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6. A computer program product for performing a dielectric reliability assessment for an advanced semiconductor, the computer program product comprising:
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a non-transitory tangible storage medium readable by a processing circuit and storing instructions for execution by the processing circuit for performing a method comprising; receiving data associated with a test of a macro of the advanced semiconductor to a point of dielectric breakdown; scaling the data for the macro down to a reference area; extracting a parameter for a Weibull distribution from the scaled down data for the reference area; deriving a cluster factor (α
) from the scaled down data for the reference area; andprojecting a failure rate for a larger area of the advanced semiconductor based on the extracted parameter, the cluster factor and the recorded data associated with the dielectric breakdown of the macro;
wherein the projection is made using according to; - View Dependent Claims (7, 8, 9, 10)
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11. A computer system for performing a dielectric reliability assessment for an advanced semiconductor, the system comprising:
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a processor configured to communicate with a memory and one or more auxiliary storage devices, the processor configured to perform a method comprising; receiving data associated with a test of a macro of the advanced semiconductor to a point of dielectric breakdown; scaling the data for the macro down to a reference area; extracting a parameter for a Weibull distribution from the scaled down data for the reference area; deriving a cluster factor (α
) from the scaled down data for the reference area; andprojecting a failure rate for a larger area of the advanced semiconductor based on the extracted parameter, the cluster factor and the recorded data associated with the dielectric breakdown of the macro; - View Dependent Claims (12, 13, 14, 15)
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Specification