Chamber with uniform flow and plasma distribution

• US 8,840,725 B2
• Filed: 09/17/2010
• Issued: 09/23/2014
• Est. Priority Date: 11/11/2009
• Status: Active Grant

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Palagashvili, David, Willwerth, Michael D., Liu, Jingbao, Erenstein, Alex
• Primary Examiner(s): Zervigon, Rudy
• Application Number:
  US12/884,978
• Publication Number:
  US 20110162803A1
• Time in Patent Office: 1,467 Days
• Field of Search: 118/715, 118/723.E, 118/723.R, 156/345.29
• US Class Current: 118/715
• CPC Class Codes: H01J 37/32091 the radio frequency energy being capacitively coupled to the plasma
• CPC Class Codes: H01J 37/32449 Gas control, e.g. control of the gas flow
• CPC Class Codes: H01J 37/32816 Pressure
• CPC Class Codes: H01J 37/32844 Treating effluent gases

Abstract

Embodiments of the present invention provide a recursive liner system that facilitates providing more uniform flow of gases proximate the surface of a substrate disposed within an apparatus for processing a substrate (e.g., a process chamber). In some embodiments, a recursive liner system may include an outer liner having an outer portion configured to line the walls of a process chamber, a bottom portion extending inward from the outer portion, and a lip extending up from the bottom portion to define a well; and an inner liner having a lower portion configured to be at least partially disposed in the well to define, together with the outer liner, a recursive flow path therebetween.

Claims

1. A recursive liner system, comprising:

an outer liner having an outer portion configured to line the walls of a process chamber, a bottom portion extending inward from the outer portion, and a lip extending up from the bottom portion to define a well; and

an inner liner dimensioned to diffuse a flow of gas and having a lower portion configured to be at least partially disposed in the well to define, together with the outer liner, a recursive flow path therebetween, wherein the lower portion is substantially centered laterally in the well.

2. The system of claim 1, wherein the inner liner further comprises a skirt disposed between the lower portion of the inner liner and an upper portion of the inner liner configured to be coupled to a substrate support.

3. The system of claim 1, wherein the inner liner and outer liners each comprise at least one of aluminum, stainless steel, anodized aluminum, or yttrium oxide.

4. The system of claim 1, wherein the outer liner provides a uniform RF ground path.

5. The system of claim 1, wherein the inner liner and outer liners each comprise at least one of aluminum or stainless steel.

6. The system of claim 1, wherein the outer liner is of unitary construction.

7. The system of claim 1, wherein the outer portion of the outer liner is separate from the bottom portion and wherein the bottom portion is coupled to the outer portion.

8. An apparatus for processing substrates, comprising:

a process chamber having a processing volume and an exhaust volume;

a substrate support disposed in the process chamber and configured to support a substrate in a lower portion of the processing volume; and

a recursive liner system disposed in the process chamber, the recursive liner system, comprising;

an outer liner having an outer portion configured to line outer walls of the process chamber, a bottom portion extending inward from the outer portion, and a lip extending up from the bottom portion to define a well; and

an inner liner coupled to the substrate support, dimensioned to diffuse a flow of gas, and having a lower portion configured to be at least partially disposed in the well to define, together with the outer liner, a recursive flow path therebetween, wherein the lower portion is substantially centered laterally in the well.

9. The apparatus of claim 8, wherein the inner liner further comprises a skirt disposed between the lower portion of the inner liner and an upper portion of the inner liner coupled to the substrate support.

10. The apparatus of claim 8, wherein the inner liner and outer liners each comprise at least one of aluminum, stainless steel, anodized aluminum, or yttrium oxide.

11. The apparatus of claim 8, wherein the outer liner provides a uniform RF ground path.

12. The apparatus of claim 11, wherein the inner liner and outer liners each comprise at least one of aluminum or stainless steel.

13. The apparatus of claim 8, wherein the outer liner is of unitary construction.

14. The apparatus of claim 8, wherein the outer portion of the outer liner is separate from the bottom portion and wherein the bottom portion is coupled to the outer portion.

15. The apparatus of claim 8, wherein the substrate support is vertically movable within the chamber.

16. An apparatus for processing substrates, comprising:

a process chamber having a processing volume and an exhaust volume;

a substrate support disposed in the process chamber to support a substrate in a lower portion of the processing volume; and

a recursive liner system disposed in the process chamber, the recursive liner system, comprising;

an outer liner that provides a uniform RF ground path, the outer liner having an outer portion to line outer walls of the process chamber, a bottom portion extending inward from the outer portion, and a lip extending up from the bottom portion to define a well;

an inner liner coupled to the substrate support, dimensioned to diffuse a flow of gas, and having a lower portion at least partially disposed in the well and spaced apart from surfaces of the outer liner; and

a recursive flow path disposed within the well between the outer liner and the inner liner, wherein the lower portion is substantially centered laterally in the well.

17. The apparatus of claim 16, wherein the substrate support is vertically movable within the chamber.