Methods for stable process in a reactive sputtering process using zinc or doped zinc target
First Claim
1. A method, comprising:
- disposing a substrate onto a substrate support in a processing chamber, the processing chamber having a sputtering target disposed therein opposite the substrate support, the sputtering target comprising an element selected from the group consisting of zinc, cadmium, tin, indium, gallium, and combinations thereof;
performing a first seasoning process while the substrate is disposed on the substrate support, the first seasoning process comprising;
introducing an inert gas and a nitrogen containing gas into the processing chamber; and
applying a first DC bias to the sputtering target to sputter material from the target;
reducing the first DC bias to a second DC bias; and
performing a first sputtering process comprising;
introducing an oxygen containing gas along with the inert gas and nitrogen containing gas;
increasing the second DC bias to a third DC bias to sputter material from the target;
increasing the third DC bias to a fourth DC bias after supplying the oxygen containing gas for a predetermined time period during the first sputtering process; and
depositing a first layer having a first composition on the substrate that comprises oxygen, nitrogen, and one or more elements selected from the group consisting of zinc, cadmium, tin, indium, gallium, and combinations thereof.
1 Assignment
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Accused Products
Abstract
Embodiments disclosed herein generally relate to a method for seasoning a sputtering target in-situ with a substrate to be processed. New semiconductor compounds containing oxygen, nitrogen, and an element such as zinc, cadmium, tin, indium, and gallium are beginning to replace silicon as the material for active channels in TFTs. The new semiconductor compounds may be deposited by a reactive sputtering process. During the sputtering process, reactive gas reacts with the metal from the sputtering target and deposits on the substrate. Some of the reactive gas may react at the surface and lead to a buildup of a compound at the target surface. Because oxygen and nitrogen are quite reactive, an oxide or nitride compound may develop at the target surface. The oxide or nitride may be removed by seasoning the sputtering target. The seasoning may occur while the substrate is within the processing chamber.
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Citations
20 Claims
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1. A method, comprising:
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disposing a substrate onto a substrate support in a processing chamber, the processing chamber having a sputtering target disposed therein opposite the substrate support, the sputtering target comprising an element selected from the group consisting of zinc, cadmium, tin, indium, gallium, and combinations thereof; performing a first seasoning process while the substrate is disposed on the substrate support, the first seasoning process comprising; introducing an inert gas and a nitrogen containing gas into the processing chamber; and applying a first DC bias to the sputtering target to sputter material from the target; reducing the first DC bias to a second DC bias; and performing a first sputtering process comprising; introducing an oxygen containing gas along with the inert gas and nitrogen containing gas; increasing the second DC bias to a third DC bias to sputter material from the target; increasing the third DC bias to a fourth DC bias after supplying the oxygen containing gas for a predetermined time period during the first sputtering process; and depositing a first layer having a first composition on the substrate that comprises oxygen, nitrogen, and one or more elements selected from the group consisting of zinc, cadmium, tin, indium, gallium, and combinations thereof. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method, comprising:
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disposing a substrate onto a substrate support in a processing chamber, the processing chamber having a sputtering target disposed therein opposite the substrate support, the sputtering target comprising an element selected from the group consisting of zinc, cadmium, tin, indium, gallium, and combinations thereof; performing a sputtering process comprising; introducing an inert gas, an oxygen containing gas, and a nitrogen containing gas into the processing chamber; applying a first DC bias to the sputtering target to sputter material from the target; increasing the first DC bias to a second DC bias after supplying the oxygen containing gas for a predetermined time period during the sputtering process; and depositing a layer on the substrate that comprises oxygen, nitrogen, and one or more elements selected from the group consisting of zinc, cadmium, tin, indium, gallium, and combinations thereof; and performing a seasoning process comprising; reducing the flow of oxygen containing gas to the processing chamber while continuing to flow the inert gas and the nitrogen containing gas; and lowering the second DC bias to a third DC bias to sputter material from the sputtering target while the substrate remains in the processing chamber. - View Dependent Claims (12, 13, 14)
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15. A method, comprising:
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disposing a substrate onto a substrate support in a processing chamber, the processing chamber having a sputtering target disposed therein opposite the substrate support, the sputtering target comprising a metal selected from the group consisting of zinc, cadmium, tin, indium, gallium, and combinations thereof; performing a first sputtering process comprising; introducing an inert gas, an oxygen containing gas, and a nitrogen containing gas into the processing chamber; applying a first DC bias to the sputtering target to sputter material from the target; increasing the first DC bias to a second DC bias after supplying the oxygen containing gas for a predetermined period; and depositing a first layer having a first composition on the substrate that comprises oxygen, nitrogen, and one or more metals selected from the group consisting of zinc, cadmium, tin, indium, gallium, and combinations thereof; performing a first seasoning process comprising; reducing the flow of oxygen containing gas to the processing chamber and reducing the second DC bias to a third DC bias while continuing to flow the inert gas and the nitrogen containing gas into the processing chamber; and sputtering material from the sputtering target while the substrate remains in the processing chamber; performing a second sputtering process comprising; introducing the oxygen containing gas into the processing chamber along with the inert gas and the nitrogen containing gas; increasing the third DC bias to a fourth DC bias; and depositing a second layer having a second composition different than the first composition on the substrate that comprises oxygen, nitrogen, and one or more metals selected from the group consisting of zinc, cadmium, tin, indium, gallium, and combinations thereof. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification