Manufacturing method of semiconductor device comprising oxide semiconductor

• US 8,841,163 B2
• Filed: 02/17/2012
• Issued: 09/23/2014
• Est. Priority Date: 12/04/2009
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei, Sakata, Junichiro, Ohara, Hiroki
• Primary Examiner(s): Coleman, William D
• Application Number:
  US13/399,369
• Publication Number:
  US 20120149147A1
• Time in Patent Office: 949 Days
• Field of Search: 438/104, 257/43, 257/E29.296
• US Class Current: 438/104
• CPC Class Codes: H01L 21/02565 Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• CPC Class Codes: H01L 21/28176 with a treatment, e.g. annealing, after the formation of the definitive gate conductor
• CPC Class Codes: H01L 21/324 Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering H01L21/20 - H01L21/288 and H01L21/302 - H01L21/322 take precedence
• CPC Class Codes: H01L 21/465 Chemical or electrical treatment, e.g. electrolytic etching to form insulating layers H01L21/469
• CPC Class Codes: H01L 21/477 Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering H01L21/38 - H01L21/449 and H01L21/461 - H01L21/475 take precedence
• CPC Class Codes: H01L 29/04 characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes characterised by physical imperfections H01L29/30
• CPC Class Codes: H01L 29/045 by their particular orientation of crystalline planes
• CPC Class Codes: H01L 29/66742 Thin film unipolar transistors
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/78603 characterised by the insulating substrate or support H01L29/78657 takes precedence
• CPC Class Codes: H01L 29/78606 with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device H01L29/78642, H01L29/78645 take precedence
• CPC Class Codes: H01L 29/78618 characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure silicide contacts, electrodes in general H01L29/458
• CPC Class Codes: H01L 29/78642 Vertical transistors
• CPC Class Codes: H01L 29/78648 arranged on opposing sides of the channel
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621

Abstract

A semiconductor device for high power application in which a novel semiconductor material having high mass productivity is provided. An oxide semiconductor film is formed, and then, first heat treatment is performed on the exposed oxide semiconductor film in order to reduce impurities such as moisture or hydrogen in the oxide semiconductor film. Next, in order to further reduce impurities such as moisture or hydrogen in the oxide semiconductor film, oxygen is added to the oxide semiconductor film by an ion implantation method, an ion doping method, or the like, and after that, second heat treatment is performed on the exposed oxide semiconductor film.

Claims

1. A method for manufacturing a semiconductor device, comprising the steps of:

forming an oxide semiconductor layer comprising indium;

performing a first heat treatment on the oxide semiconductor layer;

adding oxygen into the oxide semiconductor layer; and

performing a second heat treatment on the oxide semiconductor layer after adding oxygen,

wherein at least a top surface of the oxide semiconductor layer comprises a crystal region.

2. The method for manufacturing a semiconductor device according to claim 1, wherein the crystal region comprises a crystal with a size greater than or equal to 1 nm and less than or equal to 20 nm.

3. The method for manufacturing a semiconductor device according to claim 1, wherein c-axes of the crystal region are aligned in a direction which is substantially perpendicular to the top surface of the oxide semiconductor layer.

4. The method for manufacturing a semiconductor device according to claim 1, wherein the oxide semiconductor layer has a composition in which a Zn content is larger than an In or Ga content in atomic %.

5. The method for manufacturing a semiconductor device according to claim 1, wherein the step of adding oxygen is performed by introducing oxygen ions.

6. The method for manufacturing a semiconductor device according to claim 1, wherein the first heat treatment is performed in an atmosphere comprising an inert gas.

7. The method for manufacturing a semiconductor device according to claim 1, wherein the second heat treatment is performed in an atmosphere comprising oxygen.

8. The method for manufacturing a semiconductor device according to claim 1, wherein the oxide semiconductor layer further comprises gallium and zinc.

9. The method for manufacturing a semiconductor device according to claim 1, wherein the oxide semiconductor layer further comprises zinc and a metal other than indium and zinc.

10. The method for manufacturing a semiconductor device according to claim 1, wherein temperatures of the first heat treatment and the second heat treatment are higher than or equal to 500°

C. and lower than or equal to 850°

C.

11. The method for manufacturing a semiconductor device according to claim 1, further comprising the step of:

processing the oxide semiconductor layer by etching to form an island-shaped oxide semiconductor layer before the first heat treatment.

12. The method for manufacturing a semiconductor device according to claim 1, further comprising the steps of:

forming a gate insulating layer over the oxide semiconductor layer; and

forming a gate electrode over the gate insulating layer.

13. A method for manufacturing a semiconductor device, comprising the steps of:

forming a gate electrode;

forming a gate insulating layer over the gate electrode;

forming an oxide semiconductor layer comprising indium over the gate insulating layer;

performing a first heat treatment on the oxide semiconductor layer;

adding oxygen into the oxide semiconductor layer; and

performing a second heat treatment on the oxide semiconductor layer after adding oxygen,

wherein at least a top surface of the oxide semiconductor layer comprises a crystal region.

14. The method for manufacturing a semiconductor device according to claim 13, wherein the crystal region comprises a crystal with a size greater than or equal to 1 nm and less than or equal to 20 nm.

15. The method for manufacturing a semiconductor device according to claim 13, wherein c-axes of the crystal region are aligned in a direction which is substantially perpendicular to the top surface of the oxide semiconductor layer.

16. The method for manufacturing a semiconductor device according to claim 13, wherein the oxide semiconductor layer has a composition in which a Zn content is larger than an In or Ga content in atomic %.

17. The method for manufacturing a semiconductor device according to claim 13, wherein the step of adding oxygen is performed by introducing oxygen ions.

18. The method for manufacturing a semiconductor device according to claim 13, wherein the first heat treatment is performed in an atmosphere comprising an inert gas.

19. The method for manufacturing a semiconductor device according to claim 13, wherein the second heat treatment is performed in an atmosphere comprising oxygen.

20. The method for manufacturing a semiconductor device according to claim 13, wherein the oxide semiconductor layer further comprises gallium and zinc.

21. The method for manufacturing a semiconductor device according to claim 13, wherein the oxide semiconductor layer further comprises zinc and a metal other than indium and zinc.

22. The method for manufacturing a semiconductor device according to claim 13, wherein temperatures of the first heat treatment and the second heat treatment are higher than or equal to 500°

C. and lower than or equal to 850°

C.

23. The method for manufacturing a semiconductor device according to claim 13, further comprising the step of:

processing the oxide semiconductor layer by etching to form an island-shaped oxide semiconductor layer before the first heat treatment.

24. A method for manufacturing a semiconductor device, comprising the steps of:

forming an oxide semiconductor layer comprising indium;

adding oxygen into the oxide semiconductor layer by an ion implantation method or an ion doping method; and

performing a heat treatment on the oxide semiconductor layer after adding oxygen,

wherein at least a top surface of the oxide semiconductor layer comprises a crystal region.

25. The method for manufacturing a semiconductor device according to claim 24, wherein the crystal region comprises a crystal with a size greater than or equal to 1 nm and less than or equal to 20 nm.

26. The method for manufacturing a semiconductor device according to claim 24, wherein c-axes of the crystal region are aligned in a direction which is substantially perpendicular to the top surface of the oxide semiconductor layer.

27. The method for manufacturing a semiconductor device according to claim 24, wherein the heat treatment is performed in an atmosphere comprising oxygen.

28. The method for manufacturing a semiconductor device according to claim 24, further comprising the step of:

processing the oxide semiconductor layer by etching to form an island-shaped oxide semiconductor layer before adding oxygen.

29. The method for manufacturing a semiconductor device according to claim 24, wherein the heat treatment is performed in a state in which the top surface of the oxide semiconductor layer is exposed.

30. The method for manufacturing a semiconductor device according to claim 24, wherein the step of adding oxygen is performed by producing plasma of oxygen gas, mass-separating ion species and accelerating the mass-separated ion species.

31. The method for manufacturing a semiconductor device according to claim 24, further comprising the steps of:

forming a gate electrode; and

forming a gate insulating layer over the gate electrode,

wherein the oxide semiconductor layer is formed over the gate insulating layer.

32. A method for manufacturing a semiconductor device, comprising the steps of:

forming an oxide semiconductor layer comprising indium;

adding oxygen into the oxide semiconductor layer by an ion implantation method or an ion doping method; and

performing a heat treatment on the oxide semiconductor layer after adding oxygen;

forming a gate insulating layer over the oxide semiconductor layer; and

forming a gate electrode over the gate insulating layer,

wherein at least a top surface of the oxide semiconductor layer comprises a crystal region.

33. The method for manufacturing a semiconductor device according to claim 32, wherein the crystal region comprises a crystal with a size greater than or equal to 1 nm and less than or equal to 20 nm.

34. The method for manufacturing a semiconductor device according to claim 32, wherein c-axes of the crystal region are aligned in a direction which is substantially perpendicular to the top surface of the oxide semiconductor layer.

35. The method for manufacturing a semiconductor device according to claim 32, wherein the heat treatment is performed in an atmosphere comprising oxygen.

36. The method for manufacturing a semiconductor device according to claim 32, further comprising the step of:

processing the oxide semiconductor layer by etching to form an island-shaped oxide semiconductor layer before adding oxygen.

37. The method for manufacturing a semiconductor device according to claim 32, wherein the heat treatment is performed in a state in which the top surface of the oxide semiconductor layer is exposed.

38. The method for manufacturing a semiconductor device according to claim 32, wherein the step of adding oxygen is performed by producing plasma of oxygen gas, mass-separating ion species and accelerating the mass-separated ion species.

39. The method for manufacturing a semiconductor device according to claim 32, wherein the gate insulating layer is formed after the heat treatment is performed.