Gallium nitride based semiconductor light-emitting element, light source, and method for forming unevenness structure
First Claim
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1. A method for forming an unevenness structure, the method comprising the steps of:
- (S0) providing a gallium nitride based semiconductor, of which the surface is a crystal plane other than a c plane;
(S1) covering the surface of the gallium nitride based semiconductor with a colloidal crystal layer composed of colloidal particles which are arranged periodically, after the step (S0) has been performed; and
(S2) etching the surface of the gallium nitride based semiconductor using the colloidal crystal layer as a mask to form the unevenness structure corresponding to an arrangement pattern of the colloidal particles that form the colloidal crystal layer on the surface of the gallium nitride based semiconductor, after the step (S1) has been performed.
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Abstract
The light extraction surface of a nitride semiconductor light-emitting element, including a crystal plane other than a c plane, is subjected to a surface modification process to control its wettability, and then covered with a layer of fine particles. By etching that layer of fine particles after that, an unevenness structure, in which roughness curve elements have an average length (RSm) of 150 nm to 800 nm, is formed on the light extraction surface.
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12 Claims
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1. A method for forming an unevenness structure, the method comprising the steps of:
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(S0) providing a gallium nitride based semiconductor, of which the surface is a crystal plane other than a c plane; (S1) covering the surface of the gallium nitride based semiconductor with a colloidal crystal layer composed of colloidal particles which are arranged periodically, after the step (S0) has been performed; and (S2) etching the surface of the gallium nitride based semiconductor using the colloidal crystal layer as a mask to form the unevenness structure corresponding to an arrangement pattern of the colloidal particles that form the colloidal crystal layer on the surface of the gallium nitride based semiconductor, after the step (S1) has been performed. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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