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Gallium nitride based semiconductor light-emitting element, light source, and method for forming unevenness structure

  • US 8,841,220 B2
  • Filed: 05/13/2013
  • Issued: 09/23/2014
  • Est. Priority Date: 06/24/2011
  • Status: Expired due to Fees
First Claim
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1. A method for forming an unevenness structure, the method comprising the steps of:

  • (S0) providing a gallium nitride based semiconductor, of which the surface is a crystal plane other than a c plane;

    (S1) covering the surface of the gallium nitride based semiconductor with a colloidal crystal layer composed of colloidal particles which are arranged periodically, after the step (S0) has been performed; and

    (S2) etching the surface of the gallium nitride based semiconductor using the colloidal crystal layer as a mask to form the unevenness structure corresponding to an arrangement pattern of the colloidal particles that form the colloidal crystal layer on the surface of the gallium nitride based semiconductor, after the step (S1) has been performed.

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