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Dosimetry apparatus, systems, and methods

  • US 8,841,622 B2
  • Filed: 08/13/2013
  • Issued: 09/23/2014
  • Est. Priority Date: 04/07/2008
  • Status: Active Grant
First Claim
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1. A direct ion storage (DIS) radiation dosimeter, comprising:

  • a first layer having a MOSFET structure formed thereon by semiconductor processing techniques, the MOSFET structure having a floating gate with an exposed surface;

    a second layer having a concavity therein;

    a third layer, optionally having a concavity therein;

    the first layer being sandwiched between the second and third layer,the three layers being bonded together to form a hermetic seal;

    wherein the concavity in the second layer, and any concavity in the third layer, are aligned with the exposed surface of the floating gate to form an ion chamber;

    wherein the first layer has more than one MOSFET structure formed thereon, the second layer has a corresponding number of concavities, and the third layer optionally has a corresponding number of concavities, to form an ion chamber over each MOSFET structure; and

    wherein each ion chamber is filled with;

    a different gas;

    ora gas having different pressure.

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