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Memory element and method for manufacturing the same, and semiconductor device

  • US 8,841,642 B2
  • Filed: 11/14/2007
  • Issued: 09/23/2014
  • Est. Priority Date: 11/17/2006
  • Status: Expired due to Fees
First Claim
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1. A semiconductor device comprising a memory element comprising:

  • a first conductive layer over an insulating surface;

    a second conductive layer over the first conductive layer; and

    a memory layer interposed between the first conductive layer and the second conductive layer,wherein the memory layer comprises nanoparticles each of which is coated with an organic thin film,wherein the nanoparticles comprise a conductive material,wherein the organic thin film comprises a surfactant, andwherein the memory element is configured to be written a data by being applied a write voltage to break at least a part of the organic thin film so that at least a part of the nanoparticles contact with each other.

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