×

Semiconductor device

  • US 8,841,664 B2
  • Filed: 02/24/2012
  • Issued: 09/23/2014
  • Est. Priority Date: 03/04/2011
  • Status: Active Grant
First Claim
Patent Images

1. A semiconductor device comprising:

  • a gate electrode;

    a gate insulating film over the gate electrode;

    a pair of electrodes over the gate insulating film;

    an oxide semiconductor film which at least partially overlaps with the gate electrode and is at least partially in contact with the pair of electrodes; and

    an insulating film over the oxide semiconductor film,wherein at least one of the gate insulating film and the insulating film includes a silicon oxide film having a negative fixed charge and an oxygen-excess silicon oxide film,wherein a first edge of the gate electrode, a second edge of the pair of electrodes, and a third edge of the oxide semiconductor film are parallel to a channel length direction when seen from above, andwherein the first edge is between the second edge and the third edge in a channel width direction when seen from above.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×