Minute transistor

• US 8,841,675 B2
• Filed: 09/11/2012
• Issued: 09/23/2014
• Est. Priority Date: 09/23/2011
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Saito, Toshihiko, Isobe, Atsuo, Hanaoka, Kazuya, Nagamatsu, Sho
• Primary Examiner(s): NGO, NGAN V
• Application Number:
  US13/609,931
• Publication Number:
  US 20130075733A1
• Time in Patent Office: 742 Days
• Field of Search: 257/67, 257/69, 257/350
• US Class Current: 257/67
• CPC Class Codes: H01L 21/02565 Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• CPC Class Codes: H01L 21/44 Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
• CPC Class Codes: H01L 21/463 Mechanical treatment, e.g. grinding, ultrasonic treatment
• CPC Class Codes: H01L 21/465 Chemical or electrical treatment, e.g. electrolytic etching to form insulating layers H01L21/469
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/14632 Wafer-level processed structures
• CPC Class Codes: H01L 27/14687 Wafer level processing
• CPC Class Codes: H01L 29/04 characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes characterised by physical imperfections H01L29/30
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/78 with field effect produced by an insulated gate H01L29/7725, H01L29/775, H01L29/778 take precedence
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

A minute transistor and the method of manufacturing the minute transistor. A source electrode layer and a drain electrode layer are each formed in a corresponding opening formed in an insulating layer covering a semiconductor layer. The opening of the source electrode layer and the opening of the drain electrode layer are formed separately in two distinct steps. The source electrode layer and the drain electrode layer are formed by depositing a conductive layer over the insulating layer and in the openings, and subsequently removing the part located over the insulating layer by polishing. This manufacturing method allows for the source electrode later and the drain electrode layer to be formed close to each other and close to a channel forming region of the semiconductor layer. Such a structure leads to a transistor having high electrical characteristics and a high manufacturing yield even in the case of a minute structure.

Claims

1. A semiconductor device comprising a transistor, the transistor comprising:

a semiconductor layer comprising a channel formation region;

a gate insulating layer over the semiconductor layer;

a gate electrode layer over the semiconductor layer with the gate insulating layer interposed therebetween;

an insulating layer over the gate insulating layer, the insulating layer comprising a first opening and a second opening each formed from a top surface to a bottom surface of the insulating layer;

a source electrode layer and a drain electrode layer respectively embedded in the first opening and the second opening so that side surfaces of the source electrode layer and the drain electrode layer are in contact with the insulating layer, each of the source electrode layer and the drain electrode layer being on and in contact with the semiconductor layer; and

a source wiring layer and a drain wiring layer respectively on and in contact with the source electrode layer and the drain electrode layer,

wherein a distance in a channel formation region length direction between the source electrode layer and the drain electrode layer is shorter than a distance in the channel formation region length direction between the source wiring layer and the drain wiring layer.

2. The semiconductor device according to claim 1,

wherein the semiconductor layer includes a first low-resistance region, a second low-resistance region, the channel formation region being sandwiched between the first low-resistance region and the second low-resistance region, the first low-resistance region and the second low-resistance region comprising a higher density of an impurity element than the channel formation region.

3. The semiconductor device according to claim 1,

wherein the semiconductor layer comprises an oxide semiconductor layer.

4. The semiconductor device according to claim 1,

wherein a top surface of the source electrode layer and a top surface of the insulating layer are substantially at a same vertical level.

5. The semiconductor device according to claim 1,

wherein a top surface of the source electrode layer and a top surface of the gate electrode layer are substantially at a same vertical level.

6. The semiconductor device according to claim 1,

wherein a top surface of the source electrode layer, a top surface of the gate electrode layer, and a top surface of the insulating layer are substantially at a same vertical level.

7. The semiconductor device according to claim 1,

wherein a top surface of the gate electrode layer is covered with the insulating layer.

8. An electronic device comprising the semiconductor device according to claim 1.

9. A memory device comprising:

a first transistor comprising a first semiconductor material, a first gate electrode layer, a first gate insulating layer interposed between the first semiconductor material and the first gate electrode layer, a first source electrode layer and a first drain electrode layer electrically connected to the first semiconductor material;

a first insulating layer over the first semiconductor material;

a second transistor comprising a second semiconductor material in a semiconductor layer over the first insulating layer, the second transistor further comprising;

a second gate insulating layer over the semiconductor layer;

a second gate electrode layer over the semiconductor layer with the second gate insulating layer interposed therebetween;

a second insulating layer over the second gate insulating layer, the second insulating layer comprising a first opening and a second opening each formed from a top surface to a bottom surface of the second insulating layer;

a second source electrode layer and a second drain electrode layer respectively embedded in the first opening and the second opening so that side surfaces of the second source electrode layer and the second drain electrode layer are in contact with the second insulating layer, each of the second source electrode layer and the second drain electrode layer being on and in contact with the semiconductor layer; and

a source wiring layer and a drain wiring layer respectively on and in contact with the second source electrode layer and the second drain electrode layer,

wherein the first gate electrode layer is in electrical contact with one of the second source electrode layer and the second drain electrode layer, and

wherein, in the second transistor, a distance in a channel formation region length direction between the second source electrode layer and the second drain electrode layer is shorter than a distance in the channel formation region length direction between the source wiring layer and the drain wiring layer.

10. The memory device according to claim 9,

wherein the semiconductor layer comprises an oxide semiconductor layer.

11. The memory device according to claim 9,

wherein a top surface of the second source electrode layer and a top surface of the second insulating layer are substantially at a same vertical level.

12. The memory device according to claim 9,

wherein a top surface of the second source electrode layer and a top surface of the second gate electrode layer are substantially at a same vertical level.

13. The memory device according to claim 9,

wherein a top surface of the second source electrode layer, a top surface of the second gate electrode layer, and a top surface of the second insulating layer are substantially at a same vertical level.

14. The memory device according to claim 9,

wherein a top surface of the second gate electrode layer is covered with the second insulating layer.

15. An electronic device comprising the memory device according to claim 9.