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Wide-gap semiconductor substrate and method to fabricate wide-gap semiconductor device using the same

  • US 8,841,681 B2
  • Filed: 01/04/2011
  • Issued: 09/23/2014
  • Est. Priority Date: 07/13/2010
  • Status: Expired due to Fees
First Claim
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1. A wide-gap semiconductor substrate comprising:

  • a narrow-gap semiconductor layer having a main surface;

    a wide-gap semiconductor layer which is epitaxially grown on the narrow-gap semiconductor layer; and

    an alignment mark which is preliminarily carved in a prescribed position on the main surface of the narrow-gap semiconductor layer so that the alignment mark is buried in the wide-gap semiconductor layer,wherein the narrow-gap semiconductor layer is a Si layer and the wide-gap semiconductor layer includes a nitride semiconductor layer which is made of at least one of a GaN layer and an AlGaN layer,the main surface of the narrow-gap semiconductor layer, which is not provided with the alignment mark, is fiat, anda first distance between the main surface of the narrow-gap semiconductor layer and a bottom of the alignment mark is d, a second distance between a main surface of the wide-gap semiconductor laver at a region provided with the alignment mark and the bottom of the alignment mark is 2d or more.

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