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Multi-layer interconnect structure for stacked dies

  • US 8,841,773 B2
  • Filed: 09/10/2012
  • Issued: 09/23/2014
  • Est. Priority Date: 03/30/2010
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a first substrate;

    a through-substrate via comprising a single continuous structure extending from a first side of the first substrate through the first substrate and protruding from a second side of the first substrate by a first distance, the through-substrate via electrically coupled to an electrical device disposed on the first side of the first substrate;

    a first isolation film on the second side of the first substrate, the first isolation film having a thickness less than the first distance, wherein the through-substrate via is exposed above the first isolation film;

    a first conductive element on the through-substrate via, the first conductive element extending over the first isolation film;

    a second isolation film on the first isolation film and the first conductive element; and

    a second conductive element electrically coupled to the first conductive element and extending over an upper surface of the second isolation film.

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