System and method for flash bypass

• US 8,841,916 B2
• Filed: 11/01/2011
• Issued: 09/23/2014
• Est. Priority Date: 02/28/2011
• Status: Active Grant

• Current Assignee: Tigo Energy, Inc
• Original Assignee: Tigo Energy, Inc
• Inventors: Avrutsky, Mordechay
• Primary Examiner(s): Vazquez, Arleen M
• Assistant Examiner(s): SHAH, NEEL D
• Application Number:
  US13/287,021
• Publication Number:
  US 20120217973A1
• Time in Patent Office: 1,057 Days
• Field of Search: 324/537, 702/58, 136/244, 307/150, 323/271
• US Class Current: 324/501
• CPC Class Codes: H02S 40/34 comprising specially adapted electrical connection means to be structurally associated with the PV module, e.g. junction boxes
• CPC Class Codes: H02S 50/10 Testing of PV devices, e.g. of PV modules or single PV cells testing of semiconductor devices during manufacturing H01L22/00
• CPC Class Codes: Y02E 10/50 Photovoltaic [PV] energy

Abstract

A solar photovoltaic panel is disclosed that includes a photovoltaic cell, a local management unit connected between the cell and a string bus, and a bypass device connected to the cell that is operable to bypass the local management unit when conducting a flash test. The panel preferably further includes a transient detector connected to the cell that is operable to sense an output from the cell having a predetermined transient rise time. The transient detector and the bypass device may be contained within a junction box integrated into the panel and may include the local management unit within the junction box. The transient detector may include a switch connected to a circuit that electrically bypasses the local management unit when the switch is turned on as a result of an output transient rise time less than the predetermined time, thus facilitating a flash test of the photovoltaic panel.

Claims

1. A solar photovoltaic panel, comprising:

at least one photovoltaic cell;

a local management unit connected between the at least one cell and an output of the solar photovoltaic panel;

a flash condition detector configured to detect onset of a light flash of a flash test; and

a bypass device connected to the cell operable to bypass the local management unit in response to the flash condition detector detecting the onset of the light flash of the flash test.

2. The solar photovoltaic panel of claim 1, wherein the flash condition detector comprising a transient detector connected to the at least one cell and operable to sense an output from the at least one cell having a transient rise time less than 500 milliseconds.

3. The solar photovoltaic panel of claim 1, wherein the bypass device is a mechanical switch.

4. The solar photovoltaic panel of claim 1, wherein the bypass device is a transistor switch.

5. The solar photovoltaic panel of claim 2, wherein the transient detector and the bypass device are contained within a junction box integrated into the solar photovoltaic panel.

6. The solar photovoltaic panel of claim 5, wherein the local management unit is also contained within the junction box integrated into the solar photovoltaic panel.

7. The solar photovoltaic panel of claim 2, wherein the bypass device includes a transistor switch connected to the transient detector.

8. The solar photovoltaic panel of claim 7, wherein the bypass device is a transistor circuit that electrically bypasses the local management unit when the transistor switch is turned on.

9. A junction box, comprising:

a local management unit connected to one or more photovoltaic cells;

a flash condition detector configured to detect onset of a light flash of a flash test of the one or more photovoltaic cells; and

a bypass device configured for electrically bypassing the local management unit in response to the flash condition detector detecting the onset of the light flash of the flash test.

10. The junction box of claim 9, wherein the bypass device comprises a transistor switch;

and the flash condition detector comprises a transient detector operably connected to the switch.

11. The junction box of claim 10, wherein the transient detector is operably connected between the cell and the transistor switch to actuate the switch upon sensing an output rise time of less than about 100 milliseconds indicative of a light flash.

12. The junction box of claim 9, wherein the bypass device is a reed switch.

13. The junction box of claim 9, wherein the bypass device is a transistor circuit having a switch that electrically bypasses the local management unit when the transistor switch is turned on.

14. The junction box of claim 13, wherein the flash condition detector comprises a transient detector operably connected to automatically actuate the switch upon sensing an output rise time of less than about 500 milliseconds indicative of a light flash.

15. A method of performing a flash test on a solar photovoltaic panel having a local management unit, the method comprising:

providing a light flash source facing the solar photovoltaic panel;

providing a bypass device around the local management unit and a flash condition detector;

applying a light flash to the solar photovoltaic panel to cause the flash condition detector to detect onset of the light flash and cause the bypass device to bypass the local management unit in response to the flash condition detector detecting the onset of the light flash; and

measuring an output of the solar photovoltaic panel during the light flash.

16. The method of claim 15, wherein the bypass device and the local management unit are integral with the solar photovoltaic panel.

17. The method of claim 15, further comprising:

detecting by the flash condition detector an output signal indicative of the onset of light flash; and

activating a bypass switch of the bypass device in response to the onset of the light flash being detected, to provide an electrical path around the local management unit.

18. The method of claim 17, further comprising automatically activating the bypass switch upon detection of an output signal rise time to a predetermined level in less than 100 milliseconds.

19. The method of claim 18, wherein the rise time is less than 10 milliseconds.