Substrate damage prevention system and method

• US 8,845,810 B2
• Filed: 10/18/2007
• Issued: 09/30/2014
• Est. Priority Date: 12/11/2006
• Status: Expired due to Fees

• Current Assignee: INVENIA Co., Ltd.
• Original Assignee: INVENIA Co., Ltd.
• Inventors: Hwang, Young Joo
• Primary Examiner(s): Gramaglia, Maureen
• Assistant Examiner(s): Nuckols, Tiffany
• Application Number:
  US11/874,365
• Publication Number:
  US 20080138535A1
• Time in Patent Office: 2,539 Days
• Field of Search: 118/728, 118/729, 118/730, 118/731, 118/732, 156/345.51, 156/345.52, 156/345.53, 156/345.54, 156/345.55
• US Class Current: 118/729
• CPC Class Codes: H01J 37/3244 Gas supply means
• CPC Class Codes: H01J 37/32788 for extracting the material from the process chamber
• CPC Class Codes: H01L 21/6831 using electrostatic chucks
• CPC Class Codes: H01L 21/68742 characterised by a lifting arrangement, e.g. lift pins

Abstract

A substrate damage prevention system and method for a plasma treating apparatus are provided. The system may include a lower electrode on which a substrate may be mounted, an inert gas supply unit which may supply an inert gas to an upper surface of the lower electrode on which the substrate is mounted, and an air supply unit which may supply air to the upper surface of the lower electrode. An inert gas may be supplied between the lower electrode and the substrate in order to control the temperature of the substrate during the chucking. Air may be supplied between the lower electrode and the substrate during dechucking in order to allow the substrate to be easily separated from the lower electrode.

Claims

1. A substrate handling device, comprising:

an electrode positioned in a chamber and configured to receive a substrate for processing, the electrode comprising;

a base layer;

an insulation layer provided on the base layer;

a cooling layer provided on the insulation layer; and

a lower electrode portion provided on the cooling layer;

a gas passage panel positioned on a top surface of the electrode, a top surface of the gas passage panel having a groove pattern formed therein, facing a bottom surface of a substrate received on the electrode;

a plurality of lift pins that penetrate through the electrode such that upper ends of the plurality of lift pins are configured to contact the bottom surface of the substrate so as to support the substrate thereon, wherein the bottom surface of the substrate contacts only the upper ends of the plurality of lift pins;

an inert gas supplier to selectively supply an inert gas to a gap formed between the groove pattern formed on the gas passage panel and the bottom surface of the substrate positioned only on the upper ends of the plurality of lift pins, wherein the gap is sealed by a chucking operation; and

an air supplier to selectively supply air to the sealed gap formed during chucking between the gas passage panel and the bottom surface of the substrate, wherein the air supplied to the gap during a de-chucking operation applies a predetermined air pressure to the substrate to exert a force against the substrate for releasing the seal formed during the chucking operation and separating the substrate from the lower electrode.

2. The device of claim 1, wherein the inert gas supplier comprises an inlet pipe configured to selectively supply inert gas to the gap formed between the gas passage panel and the lower surface of the substrate positioned only on the upper ends of the plurality of lift pins based on a position of at least one valve provided with the inlet pipe.

3. The device of claim 2, wherein the air supplier is configured to selectively supply air to the gap formed between the gas passage panel and the lower surface of the substrate positioned only on the upper ends of the plurality of lift pins based on a position of the at least one valve provided with the inlet pipe.

4. The device of claim 2, wherein the inlet pipe penetrates through the electrode.

5. The device of claim 2, wherein the inert gas supplier further comprises:

a first valve configured to regulate a flow of inert gas from an external inert gas source into an inert gas passage;

a pressure adjustment device provided with the inert gas passage and configured to receive inert gas from the first valve and adjust a pressure thereof; and

a second valve provided with the inert gas passage and configured to receive the pressure-adjusted inert gas from the pressure adjustment device and to regulate the flow of the pressure-adjusted inert gas from the inert gas passage into the inlet pipe.

6. The device of claim 5, wherein the air supplier comprises an air supply control valve provided with an air supply passage and configured to regulate a supply of air from an external air source into the inlet pipe.

7. The device of claim 6, further comprising a three way valve provided at a junction of the inert gas passage, the air passage and the inlet pipe, wherein the three-way valve is configured to selectively supply inert gas or air to the inlet pipe.

8. The device of claim 5, wherein the first valve is a manual valve, and the second valve is an automatic valve configured to open and close in response to an electronic input signal.

9. The device of claim 1, wherein the inert gas supplier comprises an inert gas inlet pipe configured to selectively supply inert gas to the gap formed between the gas passage panel and the lower surface of the substrate based on a position of a valve provided with the inert gas inlet pipe, and the air supplier comprises an air inlet pipe configured to selectively supply air to the gap.

10. The device of claim 1, wherein the electrode comprises:

a lower electrode positioned in a lower portion of the chamber; and

an upper electrode positioned in an upper portion of the chamber, above the lower electrode.

11. The device of claim 10, wherein the cooling layer comprises a cooling passage through which cooling fluid flows, wherein the cooling layer is configured to cool the lower electrode during a substrate treatment process.

12. The device of claim 1, wherein the inert gas is supplied to the sealed gap through a first passage and exits the sealed gap through a second passage, and wherein the inert gas travels from the first passage to the second passage to control the temperature of the substrate.

13. The device of claim 12, wherein the first passage and the second passage are located on opposing sides relative to the substrate.

14. The device of claim 1, wherein the inert gas helps to maintain the substrate at a substantially constant temperature during the period of time between the chucking operation and the de-chucking operation.

15. The device of claim 1, wherein an electrostatic force is applied to seal the gap between the upper surface of the electrode and the bottom surface of the substrate during the chucking operation.

16. The device of claim 1, wherein the groove pattern formed in the gas passage panel comprises a plurality of grooves that control movement of the inert gas through the sealed gap during the period of time between the chucking operation and the de-chucking operation.