Polishing pad and method of producing semiconductor device
First Claim
Patent Images
1. An apparatus for chemical mechanical polishing in combination with a polishing pad and material to be polished, comprising said material to be polished and the polishing pad used in chemical mechanical polishing and having a polishing region and a light-transmitting region, said polishing pad having the following characteristics:
- i) light transmittance in the light-transmitting region throughout the wavelength range of 400 to 700 nm is 70% or more; and
ii) a thickness of the light-transmitting region is 0.5 to 4 mm, and light transmittance in the light-transmitting region throughout the wavelength range of 500 to 700 nm is 90% or more;
wherein the light-transmitting region is arranged between a central portion and a peripheral portion of the polishing pad, and a length (D) of the light transmitting region in a diametrical direction is 3 times or more longer than a length (L) in a circumferential direction, wherein a length (D) in a diametrical direction is ¼
to ½
relative to the diameter of a material to be polished, and a scatter of the thickness of the light-transmitting region is 100 μ
m or lesswherein materials for forming the polishing region and the light-transmitting region are polyurethane resin, and the polyurethane resin as the material for forming the polishing region and the polyurethane resin as the material for forming the light-transmitting region are different materials but produced from the same kinds of organic isocyanate, polyol and chain extender, andwherein the polyurethane resin as the material for forming the light-transmitting region does not contain aromatic polyamine and the material for forming the light transmitting region is non-foam,wherein a material for forming the polishing region is fine-cell foam, andwherein a rate of change of the light transmittance in the light-transmitting region in wavelengths of 400 to 700 nm represented by the following equation is 30% or less;
the rate of change (%)={(maximum transmittance in 400 to 700 nm−
minimum transmittance in 400 to 700 nm)/maximum transmittance in 400 to 700 nm}×
100.
2 Assignments
0 Petitions
Accused Products
Abstract
A polishing pad enabling a highly precise optical endpoint sensing during the polishing process and thus having excellent polishing characteristics (such as surface uniformity and in-plane uniformity) is disclosed. A polishing pad enabling to obtain the polishing profile of a large area of a wafer is also disclosed. A polishing pad of a first invention comprises a light-transmitting region having a transmittance of not less than 50% over the wavelength range of 400 to 700 nm. A polishing pad of a second invention comprises a light-transmitting region having a thickness of 0.5 to 4 mm and a transmittance of not less than 80% over the wavelength range of 600 to 700 nm. A polishing pad of a third invention comprises a light-transmitting region arranged between the central portion and the peripheral portion of the polishing pad and having a length (D) in the diametrical direction which is three times or more longer than the length (L) in the circumferential direction.
-
Citations
11 Claims
-
1. An apparatus for chemical mechanical polishing in combination with a polishing pad and material to be polished, comprising said material to be polished and the polishing pad used in chemical mechanical polishing and having a polishing region and a light-transmitting region, said polishing pad having the following characteristics:
- i) light transmittance in the light-transmitting region throughout the wavelength range of 400 to 700 nm is 70% or more; and
ii) a thickness of the light-transmitting region is 0.5 to 4 mm, and light transmittance in the light-transmitting region throughout the wavelength range of 500 to 700 nm is 90% or more;wherein the light-transmitting region is arranged between a central portion and a peripheral portion of the polishing pad, and a length (D) of the light transmitting region in a diametrical direction is 3 times or more longer than a length (L) in a circumferential direction, wherein a length (D) in a diametrical direction is ¼
to ½
relative to the diameter of a material to be polished, and a scatter of the thickness of the light-transmitting region is 100 μ
m or lesswherein materials for forming the polishing region and the light-transmitting region are polyurethane resin, and the polyurethane resin as the material for forming the polishing region and the polyurethane resin as the material for forming the light-transmitting region are different materials but produced from the same kinds of organic isocyanate, polyol and chain extender, and wherein the polyurethane resin as the material for forming the light-transmitting region does not contain aromatic polyamine and the material for forming the light transmitting region is non-foam, wherein a material for forming the polishing region is fine-cell foam, and wherein a rate of change of the light transmittance in the light-transmitting region in wavelengths of 400 to 700 nm represented by the following equation is 30% or less;
the rate of change (%)={(maximum transmittance in 400 to 700 nm−
minimum transmittance in 400 to 700 nm)/maximum transmittance in 400 to 700 nm}×
100.- View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 11)
- i) light transmittance in the light-transmitting region throughout the wavelength range of 400 to 700 nm is 70% or more; and
-
10. An apparatus for chemical mechanical polishing in combination with a polishing pad and material to be polished, comprising said material to be polished and the polishing pad used in chemical mechanical polishing and having a polishing region and a light-transmitting region, said polishing pad having the following characteristics:
- i) light transmittance in the light-transmitting region throughout the wavelength range of 400 to 700 nm is 70% or more; and
ii) a thickness of the light-transmitting region is 0.5 to 4 mm, and light transmittance in the light-transmitting region throughout the wavelength range of 500 to 700 nm is 90% or more;wherein the light-transmitting region is arranged between a central portion and a peripheral portion of the polishing pad, and a length (D) of the light transmitting region in a diametrical direction is 3 times or more longer than a length (L) in a circumferential direction, wherein a length (D) in a diametrical direction is ¼
to ½
relative to the diameter of a material to be polished, and a material for forming the polishing region is fine-cell foam, wherein a compression recovery of the fine-cell foam is 50 to 100%wherein materials for forming the polishing region and the light-transmitting region are polyurethane resin, and the polyurethane resin as the material for forming the polishing region and the polyurethane resin as the material for forming the light-transmitting region are different materials but produced from the same kinds of organic isocyanate, polyol and chain extender, wherein the polyurethane resin as the material for forming the light-transmitting region does not contain aromatic polyamine and the material for forming the light transmitting region is non-foam, and wherein a rate of change of the light transmittance in the light-transmitting region in wavelengths of 400 to 700 nm represented by the following equation is 30% or less;
the rate of change (%)={(maximum transmittance in 400 to 700 nm−
minimum transmittance in 400 to 700 nm)/maximum transmittance in 400 to 700 nm}×
100.
- i) light transmittance in the light-transmitting region throughout the wavelength range of 400 to 700 nm is 70% or more; and
Specification
-
- Resources
Litigation Campaign Assessment
Thank you for your request. You will receive a custom alert email when the Litigation Campaign Assessment is available.
×
-
Current AssigneeROHM and HAAS Electronic Materials CMP Holdings Incorporated (DuPont de Nemours, Inc.)
-
Original AssigneeTOYO Tire & Rubber Company Limited (Toyo Tire Corporation)
-
InventorsNakamori, Masahiko, Shimomura, Tetsuo, Yamada, Takatoshi, Ogawa, Kazuyuki, Kazuno, Atsushi, Watanabe, Masahiro
-
Primary Examiner(s)MACARTHUR, SYLVIA
-
Application NumberUS10/536,621Publication NumberTime in Patent Office3,960 DaysField of Search156/345, 156/345.12, 156/345.13, 156/345.15, 451/6US Class Current156/345.15CPC Class CodesB24B 37/013 Devices or means for detect...B24B 37/205 provided with a window for ...
