Gas-barrier film, process for producing same, member for electronic device, and electronic device

• US 8,846,200 B2
• Filed: 09/16/2011
• Issued: 09/30/2014
• Est. Priority Date: 09/21/2010
• Status: Active Grant

• Current Assignee: Lintec Corporation
• Original Assignee: Lintec Corporation
• Inventors: Ito, Masaharu, Kondo, Takeshi, Suzuki, Yuta
• Primary Examiner(s): Nakarani, D. S.
• Application Number:
  US13/823,688
• Publication Number:
  US 20130244044A1
• Time in Patent Office: 1,110 Days
• Field of Search: 427/489, 427/496, 427/503, 427/525, 427/527, 428/451, 428/446
• US Class Current: 428/446
• CPC Class Codes: C08J 2369/00 Characterised by the use of polycarbonates; Derivatives of polycarbonates
• CPC Class Codes: C08J 2381/06 Polysulfones; Polyethersulfones
• CPC Class Codes: C08J 2483/16 in which all the silicon atoms are connected by linkages other than oxygen atoms
• CPC Class Codes: C08J 7/0427 with only one layer of a composition containing a polymer binder with more layers C08J7/042
• CPC Class Codes: C08J 7/043 Improving the adhesiveness of the coatings per se, e.g. forming primers adhesives in the form of films or foils characterised by the primer layers between the polymer carriers and the adhesives C09J7/50
• CPC Class Codes: C08J 7/048 Forming gas barrier coatings
• CPC Class Codes: C08J 7/123 Treatment by wave energy or particle radiation C08J7/18 takes precedence
• CPC Class Codes: C09D 5/00 Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced electrically insulating plastics, resins or waxes H01B3/30; Filling pastes
• CPC Class Codes: C23C 14/48 Ion implantation
• CPC Class Codes: G02F 1/133305 Flexible substrates, e.g. plastics, organic film
• CPC Class Codes: H10K 2102/311 Flexible OLED
• CPC Class Codes: H10K 30/88 Passivation; Containers; Encapsulations
• CPC Class Codes: H10K 50/844 Encapsulations
• CPC Class Codes: Y02E 10/549 Organic PV cells
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product
• CPC Class Codes: Y10T 428/31667 Next to addition polymer from unsaturated monomers, or aldehyde or ketone condensation product

Abstract

The present invention provides a gas barrier film including a base layer, and a gas barrier layer that is provided on at least one side of the base layer, the base layer including a resin having a glass transition temperature (Tg) of more than 130° C., the gas barrier layer being formed of a material that includes at least an oxygen atom and a silicon atom, a surface layer part of the gas barrier layer having an oxygen atom content rate of 60 to 75%, a nitrogen atom content rate of 0 to 10%, and a silicon atom content rate of 25 to 35%, based on a total content rate of oxygen atoms, nitrogen atoms, and silicon atoms, and the surface layer part of the gas barrier layer having a film density of 2.4 to 4.0 g/cm³. Also provided are a process for producing the same, an electronic device member that includes the gas barrier film, and an electronic device that includes the electronic device member. The gas barrier film of the invention exhibits an excellent gas barrier capability, excellent transparency, excellent bending resistance, and excellent heat resistance.

Claims

1. A gas barrier film comprising a base layer, and a gas barrier layer that is provided on at least one side of the base layer,

the base layer including a resin having a glass transition temperature (Tg) of more than 130°

C.,

the gas barrier layer being formed of a material that includes at least an oxygen atom and a silicon atom, a surface layer part of the gas barrier layer having an oxygen atom content rate of 60 to 75%, a nitrogen atom content rate of 0 to 10%, and a silicon atom content rate of 25 to 35%, based on a total content rate of oxygen atoms, nitrogen atoms, and silicon atoms, and the surface layer part of the gas barrier layer having a film density of 2.4 to 4.0 g/cm³.

2. The gas barrier film according to claim 1, wherein the material that forms the gas barrier layer includes a polysilazane compound.

3. The gas barrier film according to claim 2, wherein the polysilazane compound is perhydropolysilazane.

4. A process of producing the gas barrier film according to claim 2, the process comprising forming a polysilazane compound-containing layer on a base layer that includes a resin having a glass transition temperature (Tg) of more than 130°

C., and implanting ions into a surface area of the polysilazane compound-containing layer.

5. The process according to claim 4, comprising forming a polysilazane compound-containing layer on a base layer that includes a resin having a glass transition temperature (Tg) of more than 130°

C. and implanting ions of at least one gas selected from a group consisting of hydrogen, nitrogen, oxygen, argon, helium, neon, xenon, krypton, a silicon compound, and a hydrocarbon into a surface area of the polysilazane compound-containing layer.

6. The process according to claim 4, comprising forming a polysilazane compound-containing layer on a base layer that includes a resin having a glass transition temperature (Tg) of more than 130°

C., and implanting ions of at least one gas selected from a group consisting of hydrogen, nitrogen, oxygen, argon, helium, neon, xenon, krypton, a silicon compound, and a hydrocarbon into a surface area of the polysilazane compound-containing layer by a plasma ion implantation method.

7. The gas barrier film according to claim 2, wherein the gas barrier layer is obtained by implanting ions into a polysilazane compound-containing layer.

8. The gas barrier film according to claim 2, wherein the base layer includes at least one resin selected from a group consisting of a polysulfone resin, a polyallylate resin, and an alicyclic hydrocarbon resin.

9. The gas barrier film according to claim 1, wherein the gas barrier layer is obtained by implanting ions into a polysilazane compound-containing layer.

10. The gas barrier film according to claim 9, wherein the ions are obtained by ionizing at least one gas selected from a group consisting of hydrogen, nitrogen, oxygen, argon, helium, neon, xenon, krypton, a silicon compound, and a hydrocarbon.

11. The gas barrier film according to claim 10, wherein the gas barrier layer is obtained by implanting the ions into the polysilazane compound-containing layer by a plasma ion implantation method.

12. The gas barrier film according to claim 10, wherein the polysilazane compound is perhydropolysilazane.

13. The gas barrier film according to claim 9, wherein the gas barrier layer is obtained by implanting the ions into the polysilazane compound-containing layer by a plasma ion implantation method.

14. The gas barrier film according to claim 13, wherein the polysilazane compound is perhydropolysilazane.

15. The gas barrier film according to claim 9, wherein the polysilazane compound is perhydropolysilazane.

16. The gas barrier film according to claim 9, wherein the base layer includes at least one resin selected from a group consisting of a polysulfone resin, a polyallylate resin, and an alicyclic hydrocarbon resin.

17. The gas barrier film according to claim 1, wherein the base layer includes at least one resin selected from a group consisting of a polysulfone resin, a polyallylate resin, and an alicyclic hydrocarbon resin.

18. The gas barrier film according to claim 1, the gas barrier film having a haze value of 8.0% or less.

19. An electronic device member comprising the gas barrier film according to claim 1.

20. An electronic device comprising the electronic device member according to claim 19.