Method to construct a 3D semiconductor device
First Claim
1. A method to construct a semiconductor device, the method comprising:
- forming a first layer comprising mono-crystallized semiconductor and first logic circuits;
forming a second layer comprising a mono-crystallized semiconductor layer, said second layer overlying said first logic circuits;
forming transistors on said second layer;
wherein said forming transistors comprises a lithography step, said lithography step comprises an alignment to said first layer, andconnecting said first logic circuits to an external device using input/output (I/O) circuits, said input/output (I/O) circuits are constructed on said second mono-crystallized semiconductor layer.
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Abstract
A method to construct a semiconductor device, the method including: forming a first mono-crystallized semiconductor layer; forming a second mono-crystallized semiconductor layer including mono-crystallized semiconductor transistors; where the second mono-crystallized semiconductor layer overlays the first mono-crystallized semiconductor layer, where the first mono-crystallized semiconductor layer includes an alignment mark and the transistors are aligned to the alignment mark, and where the first mono-crystallized semiconductor layer includes logic circuits, and connecting the logic circuits to an external device using input/output (I/O) circuits, where the input/output (I/O) circuits are constructed on the second mono-crystallized semiconductor layer.
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Citations
21 Claims
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1. A method to construct a semiconductor device, the method comprising:
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forming a first layer comprising mono-crystallized semiconductor and first logic circuits; forming a second layer comprising a mono-crystallized semiconductor layer, said second layer overlying said first logic circuits; forming transistors on said second layer; wherein said forming transistors comprises a lithography step, said lithography step comprises an alignment to said first layer, and connecting said first logic circuits to an external device using input/output (I/O) circuits, said input/output (I/O) circuits are constructed on said second mono-crystallized semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method to construct a semiconductor device, the method comprising:
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forming a first layer comprising mono-crystallized semiconductor and first logic circuits; forming a second layer comprising a mono-crystallized semiconductor layer, said second layer overlying said first logic circuits; forming transistors on said second layer; wherein said forming transistors comprises a lithography step, said lithography step comprises an alignment to said first layer, and connecting said first logic circuits to an external device using input/output (I/O) circuits, said input/output (I/O) circuits are constructed on said second mono-crystallized semiconductor layer, wherein said input/output (I/O) circuits comprise a SerDes circuit. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. A method to construct a semiconductor device, the method comprising:
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forming a first layer comprising mono-crystallized semiconductor and first logic circuits; forming a second layer comprising a mono-crystallized semiconductor layer, said second layer overlying said first logic circuits; forming transistors on said second layer; wherein said forming transistors comprises a lithography step, said lithography step comprises an alignment to said first layer, wherein said transistors are connected to form second logic circuits, and wherein said second logic circuits comprise a scan chain. - View Dependent Claims (16, 17, 18, 19, 20, 21)
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Specification