Semiconductor device and method for manufacturing the same

• US 8,846,488 B2
• Filed: 11/30/2011
• Issued: 09/30/2014
• Est. Priority Date: 10/14/2011
• Status: Active Grant

• Current Assignee: Institute of Microelectronics Chinese Academy of Sciences
• Original Assignee: Institute of Microelectronics Chinese Academy of Sciences
• Inventors: Yin, Huaxiang, Zhong, Huicai, Zhu, Huilong, Liang, Qingqing
• Primary Examiner(s): Abdelaziez, Yasser A
• Application Number:
  US13/578,598
• Publication Number:
  US 20130093041A1
• Time in Patent Office: 1,035 Days
• Field of Search: None
• US Class Current: 438/424
• CPC Class Codes: H01L 21/26506 in group IV semiconductors
• CPC Class Codes: H01L 21/76224 using trench refilling with dielectric materials trench filling with polycristalline silicon H01L21/763; together with vertical isolation, e.g. trench refilling in a SOI substrate H01L21/76264
• CPC Class Codes: H01L 29/7842 means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate variation of the composition of the channel H01L29/1054
• CPC Class Codes: H01L 29/7847 using a memorization technique, e.g. re-crystallization under strain, bonding on a substrate having a thermal expansion coefficient different from the one of the region

Abstract

The invention relates to a semiconductor device and a method for manufacturing such a semiconductor device. A semiconductor device according to an embodiment of the invention may comprise: a substrate; a device region located on the substrate; and at least one stress introduction region separated from the device region by an isolation structure, with stress introduced into at least a portion of the at least one stress introduction region, wherein the stress introduced into the at least a portion of the at least one stress introduction region is produced by utilizing laser to illuminate an amorphized portion comprised in the at least one stress introduction region to recrystallize the amorphized portion. The semiconductor device according to an embodiment of the invention produces stress in a simpler manner and thereby improves the performance of the device.

Claims

1. A method for manufacturing a semiconductor device, comprising:

providing a substrate;

forming a device region and forming at least one stress introduction region separated from the device region on the substrate;

forming an isolation structure between the device region and the at least one stress introduction region;

forming a cap layer at least covering the device region;

amorphizing at least a portion of the at least one stress introduction region;

recrystallizing the amorphized portion of the at least one stress introduction region by laser, thereby introducing stress into the at least one stress introduction region; and

removing the cap layer.

2. The method for manufacturing a semiconductor device as claimed in claim 1, wherein the substrate is a semiconductor substrate, and

wherein forming a device region and forming at least one stress introduction region separated from the device region on the substrate comprises:

patterning at least a portion of the upper part of the semiconductor substrate, thereby forming the device region and the at least one stress introduction region separated from the device region.

3. The method for manufacturing a semiconductor device as claimed in claim 1, wherein forming a device region and forming at least one stress introduction region separated from the device region on the substrate comprises:

forming a semiconductor layer on the substrate; and

patterning at least a portion of the semiconductor layer, thereby forming the device region and the at least one stress introduction region separated from the device region.

4. The method for manufacturing a semiconductor device as claimed in claim 1, wherein forming an isolation structure between the device region and the at least one stress introduction region comprises:

filling the spacing between the device region and the at least one stress introduction region with a dielectric.

5. The method for manufacturing a semiconductor device as claimed in claim 1, wherein at least a portion of the at least one stress introduction region is amorphized by selectively implanting ions into the at least a portion of the at least one stress introduction region.

6. The method for manufacturing a semiconductor device as claimed in claim 1, wherein the cap layer comprises a metal layer capable of reflecting laser.

7. The method for manufacturing a semiconductor device as claimed in claim 6, wherein the cap layer also comprise a buffer layer below the metal layer.

8. The method for manufacturing a semiconductor device as claimed in claim 1, further comprising forming a semiconductor device structure in the device region after the device region is formed in the substrate.

9. The method for manufacturing a semiconductor device as claimed in claim 1, further comprising forming a semiconductor device structure in the device region after the isolation structure is formed between the device region and the at least one stress introduction region.

10. The method for manufacturing a semiconductor device as claimed in claim 1, further comprising forming a semiconductor device structure in the device region after the cap layer is removed.