Composite carrier structure

• US 8,846,499 B2
• Filed: 08/17/2010
• Issued: 09/30/2014
• Est. Priority Date: 08/17/2010
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Shih, Ying-Ching, Wu, Weng-Jin, Lin, Jing-Cheng, Chiou, Wen-Chih, Jeng, Shin-Puu, Yu, Chen-Hua
• Primary Examiner(s): Patel, Reema
• Application Number:
  US12/858,211
• Publication Number:
  US 20120045611A1
• Time in Patent Office: 1,505 Days
• Field of Search: 438/109, 438/455, 438/458, 438/464
• US Class Current: 438/464
• CPC Class Codes: B32B 17/10 of synthetic resin
• CPC Class Codes: B32B 2457/14 Semiconductor wafers
• CPC Class Codes: B32B 37/1207 Heat-activated adhesive B32B37/04 takes precedence
• CPC Class Codes: B32B 37/182 one or more of the layers being plastic
• CPC Class Codes: B32B 37/185 Laminating sheets, panels or inserts between two discrete plastic layers
• CPC Class Codes: G07F 17/3213 Details of moving display elements, e.g. spinning reels, tumbling members
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 2221/68318 Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
• CPC Class Codes: H01L 2221/68327 used during dicing or grinding
• CPC Class Codes: H01L 2221/6834 used to protect an active side of a device or wafer
• CPC Class Codes: H01L 2221/68381 Details of chemical or physical process used for separating the auxiliary support from a device or wafer
• CPC Class Codes: Y10T 156/10 Methods of surface bonding and/or assembly therefor
• CPC Class Codes: Y10T 428/24322 Composite web or sheet
• CPC Class Codes: Y10T 428/24562 Interlaminar spaces
• CPC Class Codes: Y10T 428/24612 Composite web or sheet

Abstract

A composite carrier structure for manufacturing semiconductor devices is provided. The composite carrier structure utilizes multiple carrier substrates, e.g., glass or silicon substrates, coupled together by interposed adhesive layers. The composite carrier structure may be attached to a wafer or a die for, e.g., backside processing, such as thinning processes. In an embodiment, the composite carrier structure comprises a first carrier substrate having through-substrate vias formed therethrough. The first substrate is attached to a second substrate using an adhesive such that the adhesive may extend into the through-substrate vias.

Claims

1. A method of forming a semiconductor device, the method comprising:

providing a first substrate;

providing a carrier structure, the carrier structure comprising a first carrier substrate and a second carrier substrate, the first carrier substrate being thicker than the second carrier substrate, a first adhesive being interposed between the first carrier substrate and the second carrier substrate, the first carrier substrate and the second carrier substrate being rigid;

attaching the first substrate to a first surface of the carrier structure, one of the first carrier substrate and the second carrier substrate having a larger difference in thickness from the first substrate being interposed between the other of the one of the first carrier substrate and the second carrier substrate and the first substrate; and

processing the first substrate, the first carrier substrate and the second carrier substrate not providing electrical functionality to the first substrate.

2. The method of claim 1, wherein the carrier structure includes at least one internal adhesive layer.

3. The method of claim 2, wherein the internal adhesive layer has a thickness from about 20 μ

m to about 300 μ

m.

4. The method of claim 1, further comprising coating the first surface of the carrier structure with a light-sensitive material prior to the attaching.

5. The method of claim 4, further comprising removing the carrier structure, the removing being performed at least in part by lasing the carrier structure to decompose the light-sensitive material.

6. The method of claim 1, wherein the first carrier substrate having a plurality of through-substrate vias.

7. The method of claim 6, further comprising a light-sensitive material being interposed between the first carrier substrate and the second carrier substrate.

8. The method of claim 1, wherein the attaching the first substrate to the first surface of the carrier structure is performed at least in part by using a second adhesive.

9. The method of claim 8, wherein the first adhesive is different from the second adhesive.

10. The method of claim 8, wherein the second adhesive comprises a light-dissolved material.

11. The method of claim 7, further comprising removing the second carrier substrate from the first carrier substrate, the removing being performed at least in part by lasing the carrier structure to decompose the light-sensitive material.

12. A method of forming a semiconductor device, the method comprising:

providing a first carrier substrate, the first carrier substrate having an opening therein extending from a first surface to a second surface of the first carrier substrate;

attaching a second carrier substrate to the first carrier substrate using an adhesive layer, the adhesive layer extending through the opening from the first surface to the second surface of the first carrier substrate; and

attaching a substrate to the first carrier substrate on a side opposite of the second carrier substrate.

13. The method of claim 12, further comprising providing a light-sensitive material being interposed between the first carrier substrate and the second carrier substrate.

14. The method of claim 13, further comprising separating the first carrier substrate from the second carrier substrate by at least in part exposing the light-sensitive material to a light source.

15. The method of claim 12, wherein the first carrier substrate comprises a plurality of openings extending from the first surface to the second surface of the first carrier substrate, the adhesive layer extending through the plurality of openings.

16. A method of forming a semiconductor device, the method comprising:

providing a first substrate;

providing a carrier structure, the carrier structure comprising a first carrier substrate and a second carrier substrate, the first carrier substrate having a first thickness, the second carrier having a second thickness, the first thickness being closer to a thickness of the first substrate than the second thickness, a first adhesive being interposed between the first carrier substrate and the second carrier substrate;

attaching the first substrate to a first surface of the carrier structure such that the second carrier substrate is interposed between the first substrate and the first carrier substrate, the second carrier substrate being rigid; and

processing the first substrate while the first substrate is attached to the first carrier substrate and the second carrier substrate.

17. The method of claim 16, wherein the carrier structure includes at least one internal adhesive layer.

18. The method of claim 16, wherein the first carrier substrate has a plurality of through-substrate vias.

19. The method of claim 18, further comprising a light-sensitive material being interposed between the first carrier substrate and the second carrier substrate.

20. The method of claim 16, wherein the attaching the first substrate to the first surface of the carrier structure is performed at least in part by using a second adhesive.

21. The method of claim 20, wherein the first adhesive is different from the second adhesive.