Through-hole substrate and method of producing the same

• US 8,846,526 B2
• Filed: 04/06/2012
• Issued: 09/30/2014
• Est. Priority Date: 04/14/2011
• Status: Active Grant

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Teshima, Takayuki
• Primary Examiner(s): Karimy, Timor
• Application Number:
  US13/884,461
• Publication Number:
  US 20130234343A1
• Time in Patent Office: 907 Days
• Field of Search: 438/637, 257/774, 257/76, 257/502, 257/621, 257/698, 257/E23.011, 257/E23.167, 257/E23.174
• US Class Current: 438/637
• CPC Class Codes: C23C 18/00 Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
• CPC Class Codes: C23C 18/1605 by masking
• CPC Class Codes: C23C 18/165 Multilayered product layered product B32B
• CPC Class Codes: C23C 18/1841 with use of metal first
• CPC Class Codes: C23C 18/42 Coating with noble metals
• CPC Class Codes: C25D 3/00 Electroplating: Baths therefor
• CPC Class Codes: C25D 3/38 of copper
• CPC Class Codes: C25D 5/00 Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
• CPC Class Codes: C25D 5/02 Electroplating of selected surface areas
• CPC Class Codes: C25D 5/022 using masking means
• CPC Class Codes: C25D 5/48 After-treatment of electroplated surfaces
• CPC Class Codes: C25D 7/00 Electroplating characterised by the article coated
• CPC Class Codes: C25D 7/123 Semiconductors first coated with a seed layer or a conductive layer
• CPC Class Codes: H01J 1/46 Control electrodes, e.g. grid for igniting arrangements H01J7/30; Auxiliary electrodes auxiliary anodes for maintaining a discharge H01J1/36
• CPC Class Codes: H01J 9/14 of non-emitting electrodes
• CPC Class Codes: H01L 21/76898 formed through a semiconductor substrate
• CPC Class Codes: H01L 23/481 Internal lead connections, e.g. via connections, feedthrough structures
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H05K 3/42 Plated through-holes or plated via connections

Abstract

A substrate (3) in which a through-hole (2) is filled with a filler (4) is prepared, and a structure (6), at least a part of the surface of which has an insulating property, is formed on the surface of the substrate (3). A plated layer (7) is formed on the substrate (3) having the structure (6) formed thereon, and the filler (4) and the structure (6) are removed. Thus, a through-hole substrate (8) is formed, in which the plated layer (7) having an opening (9) communicating with the through-hole (2) is provided on at least one surface of a substrate (1).

Claims

1. A method of producing a through-hole substrate, comprising:

preparing a substrate having a through-hole filled with a filler containing a material capable of being selectively removed with respect to the substrate;

forming a structure, at least a part of a surface of which has an insulating property, in a region including at least a part of the through-hole on at least one surface of the substrate;

forming a plated layer on the substrate having the structure formed thereon; and

removing the filler and the structure after forming the plated layer.

2. The method of producing a through-hole substrate according to claim 1, wherein a diameter of a contact surface of the structure and the substrate is smaller than a diameter of the through-hole.

3. The method of producing a through-hole substrate according to claim 2, wherein the structure is formed on the filler that fills the through-hole.

4. The method of producing a through-hole substrate according to claim 1, wherein a diameter of a contact surface of the structure and the substrate is larger than a diameter of the through-hole.

5. The method of producing a through-hole substrate according to claim 1, wherein the filler is a metal.

6. The method of producing a through-hole substrate according to claim 1, further comprising forming a seed layer in a region including at least a part of an opening end of the through-hole on at least one surface of the substrate.

7. The method of producing a through-hole substrate according to claim 1, wherein the plated layer is an electroless plated layer.