Semiconductor device having a trenched insulating layer coated with an oxide semiconductor film
First Claim
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1. A semiconductor device comprising:
- an insulating layer including a first region having a first thickness and a second region having a second thickness smaller than the first thickness, the insulating layer including a trench including a side surface and a bottom surface, the bottom surface being overlapped with the second region;
an oxide semiconductor film which includes a source region, a drain region, and a channel formation region and which is provided in contact with the bottom surface and the side surface of the trench and a top surface of the first region;
a source electrode layer and a drain electrode layer which are electrically connected to the source region and the drain region;
a gate insulating layer provided over the oxide semiconductor film, the source electrode layer, and the drain electrode layer; and
a gate electrode layer provided over the gate insulating layer, the gate electrode layer overlapping with the trench,wherein the channel formation region is provided in contact with the side surface and the bottom surface of the trench, the channel formation region including a crystal, andwherein the source region and the drain region have higher impurity concentrations than the channel formation region.
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Abstract
It is an object to provide a semiconductor device in which a short-channel effect is suppressed and miniaturization is achieved, and a manufacturing method thereof. A trench is formed in an insulating layer and impurities are added to an oxide semiconductor film in contact with an upper end corner portion of the trench, whereby a source region and a drain region are formed. With the above structure, miniaturization can be achieved. Further, with the trench, a short-channel effect can be suppressed setting the depth of the trench as appropriate even when a distance between a source electrode layer and a drain electrode layer is shortened.
171 Citations
14 Claims
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1. A semiconductor device comprising:
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an insulating layer including a first region having a first thickness and a second region having a second thickness smaller than the first thickness, the insulating layer including a trench including a side surface and a bottom surface, the bottom surface being overlapped with the second region; an oxide semiconductor film which includes a source region, a drain region, and a channel formation region and which is provided in contact with the bottom surface and the side surface of the trench and a top surface of the first region; a source electrode layer and a drain electrode layer which are electrically connected to the source region and the drain region; a gate insulating layer provided over the oxide semiconductor film, the source electrode layer, and the drain electrode layer; and a gate electrode layer provided over the gate insulating layer, the gate electrode layer overlapping with the trench, wherein the channel formation region is provided in contact with the side surface and the bottom surface of the trench, the channel formation region including a crystal, and wherein the source region and the drain region have higher impurity concentrations than the channel formation region. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A semiconductor device comprising:
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a substrate comprising a single crystal silicon; an insulating layer over the substrate, the insulating layer including a first region having a first thickness and a second region having a second thickness smaller than the first thickness, the insulating layer including a trench including a side surface and a bottom surface, the bottom surface being overlapped with the second region; an oxide semiconductor film which includes a source region, a drain region, and a channel formation region and which is provided in contact with the bottom surface and the side surface of the trench and a top surface of the first region; a source electrode layer and a drain electrode layer which are electrically connected to the source region and the drain region; a gate insulating layer provided over the oxide semiconductor film, the source electrode layer, and the drain electrode layer; and a gate electrode layer provided over the gate insulating layer, the gate electrode layer overlapping with the trench, wherein the channel formation region is provided in contact with the side surface and the bottom surface of the trench, the channel formation region including a crystal, and wherein the source region and the drain region have higher impurity concentrations than the channel formation region. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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Specification