Sapphire substrate having triangular projections with outer perimeter formed of continuous curve

• US 8,847,263 B2
• Filed: 03/14/2013
• Issued: 09/30/2014
• Est. Priority Date: 08/06/2010
• Status: Active Grant

• Current Assignee: Nichia Corporation
• Original Assignee: Nichia Corporation
• Inventors: Narita, Junya, Wakai, Yohei, Inoue, Yoshiki, Kadan, Katsuyoshi, Okada, Takuya, Sako, Naoya
• Primary Examiner(s): Toledo, Fernando L
• Assistant Examiner(s): Bradford, Peter
• Application Number:
  US13/831,211
• Publication Number:
  US 20130270593A1
• Time in Patent Office: 565 Days
• Field of Search: 257/E51.021, 257/E33.067, 257/E33.074, 257/98
• US Class Current: 257/98
• CPC Class Codes: H01L 21/0242 Crystalline insulating materials
• CPC Class Codes: H01L 21/0243 Surface structure
• CPC Class Codes: H01L 21/02458 Nitrides
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/10 with a light reflecting structure, e.g. semiconductor Bragg reflector
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: Y10T 428/24 Structurally defined web or sheet [e.g., overall dimension, etc.]
• CPC Class Codes: Y10T 428/24479 including variation in thickness

Abstract

A sapphire substrate having a principal surface for growing a nitride semiconductor to form a nitride semiconductor light emitting device comprises a plurality of projections on the principal surface. Each of the projections has a bottom that has a substantially polygonal shape. Each side of the bottom of the projections has a depression in its center. Vertexes of the bottoms of the respective projections extend in a direction that is within a range of ±10 degrees of a direction that is rotated clockwise by 30 degrees from a crystal axis “a” of the sapphire substrate.

Claims

1. A sapphire substrate having a principal surface for growing a nitride semiconductor to form a nitride semiconductor light emitting device, the sapphire substrate comprising a plurality of projections on the principal surface,

wherein each of the projections has a bottom that has a substantially triangular shape,

wherein each side of the bottom of the projections has a depression in its center,

wherein each of the projections has an outer perimeter formed of a continuous curve.

2. The sapphire substrate according to claim 1, wherein the plurality of projections are arranged so that any straight line that is drawn at any position in any direction in a plane including the bottoms of the plurality of projections passes through a geometric area of the bottom of at least one of projections.

3. The sapphire substrate according to claim 1, wherein each of the projections has a substantially pyramidal shape or substantially truncated pyramidal shape.

4. The sapphire substrate according to claim 1, wherein the plurality of projections are arranged so that one of the three vertexes of a bottom of a first projection among neighboring projections is located in a region defined by an imaginary triangle formed between points of two vertexes of a bottom of a second projection among the neighboring projections, and the deepest point of the depression in a corresponding side of the second projection.

5. The sapphire substrate according to claim 4, wherein said first projection among the neighboring projections is arranged so that the deepest point of the depression of the second projection is located on a line that bisects an angle of a vertex of said first projection.

6. The sapphire substrate according to claim 1, wherein each of the projections has a shape with linear symmetry to a straight line that connects a deepest point of a depression and a vertex opposite to a side including the depression.

7. The sapphire substrate according to claim 1, wherein each of the projections has a top surface that has a shape substantially similar to that of the bottom.

8. The sapphire substrate according to claim 1, wherein the plurality of projections are arranged so as to form a plurality of rows, and wherein the plurality of projections are arranged so that bisectors that bisect angles of one of vertexes of projections arranged in the same row are located on a straight line, and projection directions of the projections in the same row, defined by a direction of the bisector that is drawn from an inside to outside of the projections, are the same.

9. The sapphire substrate according to claim 8, wherein an orientation of projections forming a first row among neighboring rows is opposite to an orientation of projections forming a second row among the neighboring rows.

10. The sapphire substrate according to claim 1, wherein the plurality of projections are arranged in a plurality of groups of projections, each group of (n+1) projections being arranged at group vertexes and a group center of a substantially regular n-sided polygon.

11. The sapphire substrate according to claim 10, wherein at least one of the groups shares at least one of the projections with a neighboring group.

12. A nitride semiconductor light emitting device formed by growing a nitride semiconductor layer on the principal surface of the sapphire substrate according to claim 1.

13. The sapphire substrate according to claim 1, wherein each of the three vertexes of the bottoms of the respective projections extend in a direction that is within a range of ±

10 degrees of three respective directions that are rotated clockwise by 30 degrees from three respective crystal axes “

a1”

, “

a2”

, and “

a3”

of the sapphire substrate.

14. The sapphire substrate according to claim 1, wherein each side of the projections is inclined between the bottom and a top of the projections.

15. The sapphire substrate according to claim 1, wherein a shape of an outer periphery of a protruded portion of a first projection among neighboring projections has a shape that is the same as the shape of a corresponding depressed side of a second projection among the neighboring projections.