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Sapphire substrate having triangular projections with outer perimeter formed of continuous curve

  • US 8,847,263 B2
  • Filed: 03/14/2013
  • Issued: 09/30/2014
  • Est. Priority Date: 08/06/2010
  • Status: Active Grant
First Claim
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1. A sapphire substrate having a principal surface for growing a nitride semiconductor to form a nitride semiconductor light emitting device, the sapphire substrate comprising a plurality of projections on the principal surface,wherein each of the projections has a bottom that has a substantially triangular shape,wherein each side of the bottom of the projections has a depression in its center,wherein each of the projections has an outer perimeter formed of a continuous curve.

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