Semiconductor device
First Claim
1. A semiconductor device, comprising:
- a rectifying element;
an electrode pad electrically connected to said rectifying element; and
a resistance and a junction-type field effect transistor arranged between said rectifying element and said electrode pad, and electrically connected to each other,said semiconductor device having a configuration in which said rectifying element, said resistance, said junction-type field effect transistor, and said electrode pad are serially connected, andsaid semiconductor device being configured to generate a gate potential of said junction-type field effect transistor based on a difference in potential across said resistance and to produce a depletion layer in a channel of said junction-type field effect transistor based on said gate potential, andthe resistance and the depletion layer of the junction-type field effect transistor being included in the same layer of the semiconductor device.
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Accused Products
Abstract
A semiconductor device includes: a rectifying element; an electrode pad electrically connected to the rectifying element; and a resistance and a depletion transistor arranged between the rectifying element and the electrode pad, and electrically connected to each other. The semiconductor device has a configuration in which the rectifying element, the resistance, the depletion transistor, and the electrode pad are serially connected. The semiconductor device is configured to generate a gate potential of the depletion transistor based on a difference in potential across the resistance and to produce a depletion layer in a channel of the depletion transistor based on the gate potential. As a result, a semiconductor device having reasonably large current at low voltage and small current at high voltage can be obtained.
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Citations
7 Claims
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1. A semiconductor device, comprising:
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a rectifying element; an electrode pad electrically connected to said rectifying element; and a resistance and a junction-type field effect transistor arranged between said rectifying element and said electrode pad, and electrically connected to each other, said semiconductor device having a configuration in which said rectifying element, said resistance, said junction-type field effect transistor, and said electrode pad are serially connected, and said semiconductor device being configured to generate a gate potential of said junction-type field effect transistor based on a difference in potential across said resistance and to produce a depletion layer in a channel of said junction-type field effect transistor based on said gate potential, and the resistance and the depletion layer of the junction-type field effect transistor being included in the same layer of the semiconductor device. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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Specification